IL96401A0 - Selective area chemical vapor deposition - Google Patents
Selective area chemical vapor depositionInfo
- Publication number
- IL96401A0 IL96401A0 IL96401A IL9640190A IL96401A0 IL 96401 A0 IL96401 A0 IL 96401A0 IL 96401 A IL96401 A IL 96401A IL 9640190 A IL9640190 A IL 9640190A IL 96401 A0 IL96401 A0 IL 96401A0
- Authority
- IL
- Israel
- Prior art keywords
- vapor deposition
- chemical vapor
- selective area
- area chemical
- selective
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/442,263 US4990374A (en) | 1989-11-28 | 1989-11-28 | Selective area chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
IL96401A0 true IL96401A0 (en) | 1991-08-16 |
Family
ID=23756155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL96401A IL96401A0 (en) | 1989-11-28 | 1990-11-19 | Selective area chemical vapor deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US4990374A (xx) |
EP (1) | EP0434227B1 (xx) |
JP (1) | JPH0670275B2 (xx) |
CA (1) | CA2028438C (xx) |
DE (1) | DE69006839T2 (xx) |
IL (1) | IL96401A0 (xx) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5308594A (en) * | 1985-12-04 | 1994-05-03 | Massachusetts Institute Of Technology | Edge-heat-sink technique for zone melting recrystallization of semiconductor-on-insulator films |
US5296089A (en) * | 1985-12-04 | 1994-03-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US5755886A (en) * | 1986-12-19 | 1998-05-26 | Applied Materials, Inc. | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
US5447570A (en) * | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
JPH0752716B2 (ja) * | 1990-06-05 | 1995-06-05 | 松下電器産業株式会社 | 熱分解セル |
US5843233A (en) * | 1990-07-16 | 1998-12-01 | Novellus Systems, Inc. | Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus |
US5620525A (en) * | 1990-07-16 | 1997-04-15 | Novellus Systems, Inc. | Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate |
US5578532A (en) * | 1990-07-16 | 1996-11-26 | Novellus Systems, Inc. | Wafer surface protection in a gas deposition process |
US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5133284A (en) * | 1990-07-16 | 1992-07-28 | National Semiconductor Corp. | Gas-based backside protection during substrate processing |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5855687A (en) * | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
KR100243784B1 (ko) * | 1990-12-05 | 2000-02-01 | 조셉 제이. 스위니 | 웨이퍼의 전방부 모서리와후방부에서의 증착을 방지하는 cvd웨이퍼 처리용 수동 실드 |
WO1993013241A1 (en) * | 1991-12-23 | 1993-07-08 | Genus, Inc. | Purge gas in wafer coating area selection |
US5374412A (en) * | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
US5328722A (en) * | 1992-11-06 | 1994-07-12 | Applied Materials, Inc. | Metal chemical vapor deposition process using a shadow ring |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
US5343938A (en) * | 1992-12-24 | 1994-09-06 | Vlsi Technology, Inc. | Method and apparatus for thermally insulating a wafer support |
EP0606751B1 (en) * | 1993-01-13 | 2002-03-06 | Applied Materials, Inc. | Method for depositing polysilicon films having improved uniformity and apparatus therefor |
US5354580A (en) * | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US5384008A (en) * | 1993-06-18 | 1995-01-24 | Applied Materials, Inc. | Process and apparatus for full wafer deposition |
US5424097A (en) * | 1993-09-30 | 1995-06-13 | Specialty Coating Systems, Inc. | Continuous vapor deposition apparatus |
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US6086680A (en) * | 1995-08-22 | 2000-07-11 | Asm America, Inc. | Low-mass susceptor |
JP3932206B2 (ja) * | 1995-10-18 | 2007-06-20 | スペシャルティ、コーティング、システムズ、インコーポレイテッド | オクタフルオロ−〔2,2〕パラシクロファンの製造方法 |
ATE230445T1 (de) * | 1995-10-27 | 2003-01-15 | Specialty Coating Systems Inc | Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern |
US5741445A (en) * | 1996-02-06 | 1998-04-21 | Cvd, Incorporated | Method of making lightweight closed-back mirror |
TW402758B (en) * | 1996-05-20 | 2000-08-21 | Tokyo Electorn Limtied | Spin dryer and method of drying substrates |
US5960555A (en) * | 1996-07-24 | 1999-10-05 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
US5884412A (en) * | 1996-07-24 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
JP3336897B2 (ja) * | 1997-02-07 | 2002-10-21 | 三菱住友シリコン株式会社 | 気相成長装置用サセプター |
US5806319A (en) * | 1997-03-13 | 1998-09-15 | Wary; John | Method and apparatus for cryogenically cooling a deposition chamber |
US6051276A (en) * | 1997-03-14 | 2000-04-18 | Alpha Metals, Inc. | Internally heated pyrolysis zone |
US5841005A (en) * | 1997-03-14 | 1998-11-24 | Dolbier, Jr.; William R. | Parylene AF4 synthesis |
JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
KR100660416B1 (ko) | 1997-11-03 | 2006-12-22 | 에이에스엠 아메리카, 인코포레이티드 | 개량된 저질량 웨이퍼 지지 시스템 |
US6179924B1 (en) | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6228297B1 (en) | 1998-05-05 | 2001-05-08 | Rohm And Haas Company | Method for producing free-standing silicon carbide articles |
US6042758A (en) * | 1998-05-05 | 2000-03-28 | Cvd, Inc. | Precision replication by chemical vapor deposition |
US6464912B1 (en) | 1999-01-06 | 2002-10-15 | Cvd, Incorporated | Method for producing near-net shape free standing articles by chemical vapor deposition |
KR100331544B1 (ko) * | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
US6179913B1 (en) * | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
US6315833B1 (en) * | 1999-07-01 | 2001-11-13 | Applied Materials, Inc. | Silicon carbide sleeve for substrate support assembly |
US20030168174A1 (en) | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
JP3908112B2 (ja) * | 2002-07-29 | 2007-04-25 | Sumco Techxiv株式会社 | サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法 |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US20050170314A1 (en) * | 2002-11-27 | 2005-08-04 | Richard Golden | Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design |
US7462246B2 (en) * | 2005-04-15 | 2008-12-09 | Memc Electronic Materials, Inc. | Modified susceptor for barrel reactor |
EP1793021A3 (en) * | 2005-12-02 | 2009-01-14 | Rohm and Haas Electronic Materials LLC | Method for semiconductor processing using silicon carbide article |
US8377207B2 (en) * | 2007-05-09 | 2013-02-19 | Ulvac, Inc. | Purge gas assembly |
DE102008026001B4 (de) * | 2007-09-04 | 2012-02-16 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Erzeugung und Bearbeitung von Schichten auf Substraten unter definierter Prozessatmosphäre und Heizelement |
US8801857B2 (en) | 2008-10-31 | 2014-08-12 | Asm America, Inc. | Self-centering susceptor ring assembly |
AU2012271612B2 (en) * | 2011-06-16 | 2017-08-31 | Zimmer, Inc. | Chemical vapor infiltration apparatus and process |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
WO2015116245A1 (en) | 2014-01-30 | 2015-08-06 | Applied Materials, Inc. | Gas confiner assembly for eliminating shadow frame |
TWI839443B (zh) | 2019-01-17 | 2024-04-21 | 荷蘭商 Asm Ip 私人控股有限公司 | 通風基座 |
USD914620S1 (en) | 2019-01-17 | 2021-03-30 | Asm Ip Holding B.V. | Vented susceptor |
USD920936S1 (en) | 2019-01-17 | 2021-06-01 | Asm Ip Holding B.V. | Higher temperature vented susceptor |
TWI845682B (zh) | 2019-05-22 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 工件基座主體 |
FI129040B (fi) * | 2019-06-06 | 2021-05-31 | Picosun Oy | Fluidia läpäisevien materiaalien päällystäminen |
US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
CN113445129B (zh) * | 2021-06-21 | 2024-10-01 | 无锡吴越半导体有限公司 | 一种防止工艺气体回流的气相外延反应腔结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4033286A (en) * | 1976-07-12 | 1977-07-05 | California Institute Of Technology | Chemical vapor deposition reactor |
NL8602356A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor een axiaal symmetrische reactor voor het chemische uit damp neerslaan. |
JPS63227011A (ja) * | 1987-03-17 | 1988-09-21 | Fujitsu Ltd | 化学気相成長装置 |
JPH0333058Y2 (xx) * | 1987-06-26 | 1991-07-12 |
-
1989
- 1989-11-28 US US07/442,263 patent/US4990374A/en not_active Expired - Lifetime
-
1990
- 1990-10-24 CA CA002028438A patent/CA2028438C/en not_active Expired - Fee Related
- 1990-11-19 IL IL96401A patent/IL96401A0/xx unknown
- 1990-11-22 EP EP90312726A patent/EP0434227B1/en not_active Expired - Lifetime
- 1990-11-22 DE DE69006839T patent/DE69006839T2/de not_active Expired - Fee Related
- 1990-11-26 JP JP2318207A patent/JPH0670275B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69006839D1 (de) | 1994-03-31 |
CA2028438A1 (en) | 1991-05-29 |
CA2028438C (en) | 1993-11-30 |
JPH0670275B2 (ja) | 1994-09-07 |
US4990374A (en) | 1991-02-05 |
EP0434227A1 (en) | 1991-06-26 |
JPH03180473A (ja) | 1991-08-06 |
DE69006839T2 (de) | 1994-08-11 |
EP0434227B1 (en) | 1994-02-23 |
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