IL93540A - Capacitive semiconductive sensor with hinged silicon diaphragm for planar movement - Google Patents
Capacitive semiconductive sensor with hinged silicon diaphragm for planar movementInfo
- Publication number
- IL93540A IL93540A IL93540A IL9354090A IL93540A IL 93540 A IL93540 A IL 93540A IL 93540 A IL93540 A IL 93540A IL 9354090 A IL9354090 A IL 9354090A IL 93540 A IL93540 A IL 93540A
- Authority
- IL
- Israel
- Prior art keywords
- capacitive
- hinged
- planar movement
- silicon diaphragm
- semiconductive
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/317,236 US4998179A (en) | 1989-02-28 | 1989-02-28 | Capacitive semiconductive sensor with hinged diaphragm for planar movement |
Publications (2)
Publication Number | Publication Date |
---|---|
IL93540A0 IL93540A0 (en) | 1990-11-29 |
IL93540A true IL93540A (en) | 1993-05-13 |
Family
ID=23232735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL93540A IL93540A (en) | 1989-02-28 | 1990-02-27 | Capacitive semiconductive sensor with hinged silicon diaphragm for planar movement |
Country Status (8)
Country | Link |
---|---|
US (1) | US4998179A (fr) |
EP (1) | EP0385574B1 (fr) |
JP (1) | JP2918272B2 (fr) |
KR (1) | KR0137931B1 (fr) |
BR (1) | BR9000734A (fr) |
CA (1) | CA2010803C (fr) |
DE (1) | DE69007516T2 (fr) |
IL (1) | IL93540A (fr) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4998179A (en) * | 1989-02-28 | 1991-03-05 | United Technologies Corporation | Capacitive semiconductive sensor with hinged diaphragm for planar movement |
FR2656687B1 (fr) * | 1989-12-28 | 1994-07-22 | Vectavib | Procede de montage d'une piece mecanique comportant un element sensible definissant, avec un support, un condensateur variable, piece mecanique et outil pour sa mise en óoeuvre. |
JP2517467B2 (ja) * | 1990-10-05 | 1996-07-24 | 山武ハネウエル株式会社 | 静電容量式圧力センサ |
GB9111838D0 (en) * | 1991-06-01 | 1991-07-24 | Buttwell Limited | Treating biomass material |
JP3289196B2 (ja) * | 1991-06-27 | 2002-06-04 | ドレッサ・ナガノ、インク | 変換器の全非直線性を低減する方法及び変換器の非直線性を低減する方法 |
US5381299A (en) * | 1994-01-28 | 1995-01-10 | United Technologies Corporation | Capacitive pressure sensor having a substrate with a curved mesa |
US5744725A (en) * | 1994-04-18 | 1998-04-28 | Motorola Inc. | Capacitive pressure sensor and method of fabricating same |
JP2935812B2 (ja) * | 1994-07-14 | 1999-08-16 | 三井金属鉱業株式会社 | 車両扉用ストライカー装置およびその製造方法 |
JP3114570B2 (ja) * | 1995-05-26 | 2000-12-04 | オムロン株式会社 | 静電容量型圧力センサ |
US6324914B1 (en) | 1997-03-20 | 2001-12-04 | Alliedsignal, Inc. | Pressure sensor support base with cavity |
US6058780A (en) * | 1997-03-20 | 2000-05-09 | Alliedsignal Inc. | Capacitive pressure sensor housing having a ceramic base |
US6387318B1 (en) | 1997-12-05 | 2002-05-14 | Alliedsignal, Inc. | Glass-ceramic pressure sensor support base and its fabrication |
DE69922727T2 (de) | 1998-03-31 | 2005-12-15 | Hitachi, Ltd. | Kapazitiver Druckwandler |
US6167761B1 (en) * | 1998-03-31 | 2001-01-02 | Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. | Capacitance type pressure sensor with capacitive elements actuated by a diaphragm |
JP3567089B2 (ja) | 1998-10-12 | 2004-09-15 | 株式会社日立製作所 | 静電容量式圧力センサ |
ATE227423T1 (de) * | 1998-12-15 | 2002-11-15 | Fraunhofer Ges Forschung | Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element |
NO313723B1 (no) * | 1999-03-01 | 2002-11-18 | Sintef | Sensorelement |
DE10036433A1 (de) * | 2000-07-26 | 2002-02-07 | Endress Hauser Gmbh Co | Kapazitiver Drucksensor |
EP1305585B1 (fr) | 2000-07-26 | 2009-05-13 | Endress + Hauser GmbH + Co. KG | Capteur de pression capacitif |
DE10114838A1 (de) * | 2001-03-26 | 2002-10-10 | Implex Ag Hearing Technology I | Vollständig implantierbares Hörsystem |
US7028551B2 (en) * | 2004-06-18 | 2006-04-18 | Kavlico Corporation | Linearity semi-conductive pressure sensor |
FI119785B (fi) * | 2004-09-23 | 2009-03-13 | Vti Technologies Oy | Kapasitiivinen anturi ja menetelmä kapasitiivisen anturin valmistamiseksi |
JP2007085837A (ja) * | 2005-09-21 | 2007-04-05 | Alps Electric Co Ltd | 静電容量型圧力センサ |
JP4585426B2 (ja) * | 2005-10-31 | 2010-11-24 | アルプス電気株式会社 | 静電容量型圧力センサ |
KR100807193B1 (ko) * | 2006-09-08 | 2008-02-28 | 한국과학기술원 | 정전용량형 압력센서의 제조방법 및 이에 의해 제조된정전용량형 압력센서 |
FR2972659A1 (fr) * | 2011-03-18 | 2012-09-21 | Commissariat Energie Atomique | Procede de traitement par electroerosion d'une surface d'un element en silicium et plaque de silicium obtenue grace a un tel traitement |
JP5995038B2 (ja) * | 2011-06-16 | 2016-09-21 | 富士電機株式会社 | 半導体基板および半導体装置 |
DE102011085332A1 (de) * | 2011-10-27 | 2013-05-02 | Continental Teves Ag & Co. Ohg | Drucksensor |
US10525265B2 (en) * | 2014-12-09 | 2020-01-07 | Cochlear Limited | Impulse noise management |
DE102015216626A1 (de) * | 2015-08-31 | 2017-03-02 | Siemens Aktiengesellschaft | Drucksensoranordnung sowie Messumformer zur Prozessinstrumentierung mit einer derartigen Drucksensoranordnung |
JP6041033B2 (ja) * | 2015-10-23 | 2016-12-07 | 富士電機株式会社 | 半導体基板の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516228A (en) * | 1978-07-21 | 1980-02-04 | Hitachi Ltd | Capacity type sensor |
JPS5838732B2 (ja) * | 1978-11-02 | 1983-08-25 | 富士電機株式会社 | 圧力測定用ダイアフラム |
US4405970A (en) * | 1981-10-13 | 1983-09-20 | United Technologies Corporation | Silicon-glass-silicon capacitive pressure transducer |
US4415948A (en) * | 1981-10-13 | 1983-11-15 | United Technologies Corporation | Electrostatic bonded, silicon capacitive pressure transducer |
FI75426C (fi) * | 1984-10-11 | 1988-06-09 | Vaisala Oy | Absoluttryckgivare. |
US4586109A (en) * | 1985-04-01 | 1986-04-29 | Bourns Instruments, Inc. | Batch-process silicon capacitive pressure sensor |
JPS62127637A (ja) * | 1985-11-28 | 1987-06-09 | Yokogawa Electric Corp | 半導体圧力変換器 |
US4998179A (en) * | 1989-02-28 | 1991-03-05 | United Technologies Corporation | Capacitive semiconductive sensor with hinged diaphragm for planar movement |
-
1989
- 1989-02-28 US US07/317,236 patent/US4998179A/en not_active Expired - Lifetime
-
1990
- 1990-01-24 DE DE69007516T patent/DE69007516T2/de not_active Expired - Fee Related
- 1990-01-24 EP EP90300743A patent/EP0385574B1/fr not_active Expired - Lifetime
- 1990-02-16 BR BR909000734A patent/BR9000734A/pt unknown
- 1990-02-23 CA CA002010803A patent/CA2010803C/fr not_active Expired - Fee Related
- 1990-02-27 KR KR1019900002557A patent/KR0137931B1/ko not_active IP Right Cessation
- 1990-02-27 IL IL93540A patent/IL93540A/xx not_active IP Right Cessation
- 1990-02-28 JP JP2049161A patent/JP2918272B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0385574B1 (fr) | 1994-03-23 |
BR9000734A (pt) | 1991-01-22 |
IL93540A0 (en) | 1990-11-29 |
CA2010803A1 (fr) | 1990-08-31 |
KR900013665A (ko) | 1990-09-06 |
JPH0381635A (ja) | 1991-04-08 |
DE69007516D1 (de) | 1994-04-28 |
JP2918272B2 (ja) | 1999-07-12 |
EP0385574A1 (fr) | 1990-09-05 |
CA2010803C (fr) | 1995-01-24 |
DE69007516T2 (de) | 1994-08-04 |
US4998179A (en) | 1991-03-05 |
KR0137931B1 (ko) | 1998-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KB | Patent renewed | ||
KB | Patent renewed | ||
HP | Change in proprietorship | ||
RH1 | Patent not in force |