IL88837A - Method for the preparation of mask for x-ray lithography - Google Patents

Method for the preparation of mask for x-ray lithography

Info

Publication number
IL88837A
IL88837A IL88837A IL8883788A IL88837A IL 88837 A IL88837 A IL 88837A IL 88837 A IL88837 A IL 88837A IL 8883788 A IL8883788 A IL 8883788A IL 88837 A IL88837 A IL 88837A
Authority
IL
Israel
Prior art keywords
mask
preparation
ray lithography
lithography
ray
Prior art date
Application number
IL88837A
Other languages
English (en)
Other versions
IL88837A0 (en
Inventor
Yahalom Joseph
Original Assignee
Technion Res & Dev Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Res & Dev Foundation filed Critical Technion Res & Dev Foundation
Priority to IL88837A priority Critical patent/IL88837A/xx
Publication of IL88837A0 publication Critical patent/IL88837A0/xx
Priority to US07/442,868 priority patent/US5096791A/en
Priority to JP33298289A priority patent/JP2994407B2/ja
Priority to GB8929271A priority patent/GB2226656B/en
Priority to DE3943356A priority patent/DE3943356A1/de
Priority to FR8917472A priority patent/FR2641383A1/fr
Publication of IL88837A publication Critical patent/IL88837A/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL88837A 1988-12-30 1988-12-30 Method for the preparation of mask for x-ray lithography IL88837A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IL88837A IL88837A (en) 1988-12-30 1988-12-30 Method for the preparation of mask for x-ray lithography
US07/442,868 US5096791A (en) 1988-12-30 1989-11-29 Method for preparation of mask for x-ray lithography
JP33298289A JP2994407B2 (ja) 1988-12-30 1989-12-25 Ｘ線リソグラフィ用マスクの製法
GB8929271A GB2226656B (en) 1988-12-30 1989-12-28 Method for the preparation of a mask for x-ray lithography
DE3943356A DE3943356A1 (de) 1988-12-30 1989-12-29 Verfahren zur bildung einer maske fuer roentgenlithographie
FR8917472A FR2641383A1 (fr) 1988-12-30 1989-12-29 Procede pour l'obtention des masques pour lithographie aux rayons x

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL88837A IL88837A (en) 1988-12-30 1988-12-30 Method for the preparation of mask for x-ray lithography

Publications (2)

Publication Number Publication Date
IL88837A0 IL88837A0 (en) 1989-07-31
IL88837A true IL88837A (en) 1993-08-18

Family

ID=11059538

Family Applications (1)

Application Number Title Priority Date Filing Date
IL88837A IL88837A (en) 1988-12-30 1988-12-30 Method for the preparation of mask for x-ray lithography

Country Status (6)

Country Link
US (1) US5096791A (de)
JP (1) JP2994407B2 (de)
DE (1) DE3943356A1 (de)
FR (1) FR2641383A1 (de)
GB (1) GB2226656B (de)
IL (1) IL88837A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
US5318687A (en) * 1992-08-07 1994-06-07 International Business Machines Corporation Low stress electrodeposition of gold for X-ray mask fabrication
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5567551A (en) * 1994-04-04 1996-10-22 The United States Of America As Represented By The Secretary Of The Navy Method for preparation of mask for ion beam lithography
JPH10106943A (ja) * 1996-06-04 1998-04-24 Nikon Corp マスク用基板の製造方法
EP1329531B8 (de) * 1997-09-22 2007-09-19 National Research Institute For Metals Ferritischer,wärmebeständiger Stahl und Verfahren zur Herstellung
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6197454B1 (en) * 1998-12-29 2001-03-06 Intel Corporation Clean-enclosure window to protect photolithographic mask
US6261943B1 (en) 2000-02-08 2001-07-17 Nec Research Institute, Inc. Method for fabricating free-standing thin metal films
US6649901B2 (en) 2002-03-14 2003-11-18 Nec Laboratories America, Inc. Enhanced optical transmission apparatus with improved aperture geometry
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
US8240217B2 (en) * 2007-10-15 2012-08-14 Kavlico Corporation Diaphragm isolation forming through subtractive etching
RU2704673C1 (ru) * 2019-02-22 2019-10-30 Федеральное государственное бюджетное учреждение науки Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) Способ изготовления рентгенолитографического шаблона

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
US4368215A (en) * 1975-10-28 1983-01-11 Hughes Aircraft Company High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
DE2643811C2 (de) * 1975-10-28 1981-10-15 Hughes Aircraft Co., Culver City, Calif. Lithographie-Maske mit einer für Strahlung durchlässigen Membran und Verfahren zu ihrer Herstellung
JPS5385170A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Soft x-ray transfer mask
SU864383A1 (ru) * 1979-12-13 1981-09-15 Предприятие П/Я Р-6707 Шаблон дл рентгенолитографии
JPS5789221A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Multiple mask
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS5814837A (ja) * 1981-07-20 1983-01-27 Nec Corp Ｘ線露光マスクの製造方法
JPS58215023A (ja) * 1982-06-07 1983-12-14 Seiko Epson Corp Ｘ線マスク
JPS5950443A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd Ｘ線マスク
JPS60220933A (ja) * 1984-04-18 1985-11-05 Nec Corp Ｘ線露光マスク及びその製造方法
JPS61160747A (ja) * 1985-01-09 1986-07-21 Canon Inc リソグラフイ−法及びリソグラフイ−用マスク保持体
DE3600169A1 (de) * 1985-01-07 1986-07-10 Canon K.K., Tokio/Tokyo Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
US4696878A (en) * 1985-08-02 1987-09-29 Micronix Corporation Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask
US4771017A (en) * 1987-06-23 1988-09-13 Spire Corporation Patterning process

Also Published As

Publication number Publication date
IL88837A0 (en) 1989-07-31
DE3943356A1 (de) 1990-07-05
GB2226656A (en) 1990-07-04
JP2994407B2 (ja) 1999-12-27
FR2641383A1 (fr) 1990-07-06
GB8929271D0 (en) 1990-02-28
JPH02222521A (ja) 1990-09-05
GB2226656B (en) 1993-04-21
US5096791A (en) 1992-03-17
FR2641383B1 (de) 1995-05-24

Similar Documents

Publication Publication Date Title
DE3365521D1 (en) X-ray lithographic mask
DE3270382D1 (en) Mask structure for x-ray lithography and method for manufacturing the same
DE3573876D1 (en) X-ray source and x-ray lithography method
EP0480617A3 (en) X-ray ringfield lithography
EP0342061A3 (en) Projection exposure apparatus
EP0424134A3 (en) X-ray exposure apparatus
DE3567746D1 (en) X-ray mask
GB8418145D0 (en) X-ray exposure apparatus
EP0416811A3 (en) X-ray exposure apparatus
EP0178660A3 (en) X-ray exposure apparatus
EP0263517A3 (en) Lithography apparatus
EP0238416A3 (en) X-ray lithography system
GB2152682B (en) X-ray lithography system
IL88837A (en) Method for the preparation of mask for x-ray lithography
DE3563125D1 (en) Adaptive x-ray lithography mask
GB2152704B (en) Mask ring assembly for x-ray lithography
EP0323263A3 (en) X-ray mask support member, x-ray mask, and x-ray exposure process using the x-ray mask
EP0231916A3 (en) X-ray exposure masks
EP0424181A3 (en) X-ray exposure apparatus
DE3379915D1 (en) X-ray lithographic system
EP0424963A3 (en) Exposure mask
DE3276727D1 (en) X-ray field defining mask
EP0278076A3 (en) Lithographic mask for obtaining patterns
KR890015348A (ko) X-선 노광마스크 제조방법
EP0311058A3 (en) X-ray exposure apparatus

Legal Events

Date Code Title Description
RH Patent void