IL86160A - System for controlling apparatus for growing tubular crystalline bodies - Google Patents

System for controlling apparatus for growing tubular crystalline bodies

Info

Publication number
IL86160A
IL86160A IL86160A IL8616088A IL86160A IL 86160 A IL86160 A IL 86160A IL 86160 A IL86160 A IL 86160A IL 8616088 A IL8616088 A IL 8616088A IL 86160 A IL86160 A IL 86160A
Authority
IL
Israel
Prior art keywords
controlling apparatus
crystalline bodies
tubular crystalline
growing tubular
growing
Prior art date
Application number
IL86160A
Other languages
English (en)
Other versions
IL86160A0 (en
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of IL86160A0 publication Critical patent/IL86160A0/xx
Publication of IL86160A publication Critical patent/IL86160A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
IL86160A 1987-05-05 1988-04-25 System for controlling apparatus for growing tubular crystalline bodies IL86160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4699187A 1987-05-05 1987-05-05

Publications (2)

Publication Number Publication Date
IL86160A0 IL86160A0 (en) 1988-11-15
IL86160A true IL86160A (en) 1991-08-16

Family

ID=21946466

Family Applications (1)

Application Number Title Priority Date Filing Date
IL86160A IL86160A (en) 1987-05-05 1988-04-25 System for controlling apparatus for growing tubular crystalline bodies

Country Status (11)

Country Link
EP (1) EP0313619B1 (de)
JP (1) JP2635141B2 (de)
KR (1) KR950004788B1 (de)
CN (1) CN1020482C (de)
AU (1) AU603220B2 (de)
CA (1) CA1318224C (de)
DE (2) DE3890368C2 (de)
GB (1) GB2210709B (de)
IL (1) IL86160A (de)
WO (1) WO1988008786A1 (de)
ZA (1) ZA882964B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085728A (en) * 1987-05-05 1992-02-04 Mobil Solar Energy Corporation System for controlling crystal growth apparatus and melt replenishment system therefor
JP3109564B2 (ja) * 1995-03-27 2000-11-20 大倉電気株式会社 成長結晶体の重量測定装置
CN100436656C (zh) * 2006-12-28 2008-11-26 西安理工大学 单晶炉中籽晶与熔融硅液面接触的检测方法
CN100436657C (zh) * 2006-12-28 2008-11-26 西安理工大学 基于霍夫变换的直拉单晶硅棒直径的测量方法
CN100436658C (zh) * 2006-12-28 2008-11-26 西安理工大学 直拉法单晶硅生长过程中的熔体液面位置检测方法
CN100560810C (zh) * 2007-09-18 2009-11-18 山东大学 集成式可编程晶体生长控制系统
CN101392405B (zh) * 2008-10-27 2011-09-07 西安理工晶体科技有限公司 用于锗单晶生长过程中的高精度温度控制方法及控制系统
US8691008B2 (en) * 2009-03-31 2014-04-08 Memc Electronic Materials, Inc. Systems for weighing a pulled object
CN102051674B (zh) * 2011-01-20 2013-11-06 王楚雯 单晶锭制造装置
EP2555585B1 (de) * 2011-08-01 2017-07-05 Siemens Aktiengesellschaft Stromversorgungsvorrichtung für eine Tiegelheizung und Verfahren zu deren Betrieb
CN103160914A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的拉制方法
CN102691098B (zh) * 2012-05-30 2015-04-22 苏州科技学院 泡生法制备蓝宝石晶体的生长方法
KR101554394B1 (ko) * 2013-12-19 2015-09-18 주식회사 엘지실트론 잉곳의 성장공정을 관찰하기 위한 뷰 포트 및 이를 포함하는 잉곳성장장치
CN114046755A (zh) * 2021-11-16 2022-02-15 西安奕斯伟材料科技有限公司 获取直拉法拉制硅棒的实时长度的装置、方法及拉晶炉
US20230304893A1 (en) * 2022-03-22 2023-09-28 Globalwafers Co., Ltd. Systems and methods for determining mechanical wear in a crystal puller

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US4267151A (en) * 1978-06-14 1981-05-12 Mobil Tyco Solar Energy Corporation Apparatus for crystal growth control
US4318769A (en) * 1979-01-15 1982-03-09 Mobil Tyco Solar Energy Corporation Method of monitoring crystal growth
US4239583A (en) * 1979-06-07 1980-12-16 Mobil Tyco Solar Energy Corporation Method and apparatus for crystal growth control
US4544528A (en) * 1981-08-03 1985-10-01 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
JPS5957986A (ja) * 1982-09-24 1984-04-03 Sumitomo Electric Ind Ltd 単結晶引上方法
FR2621053A1 (fr) * 1987-09-29 1989-03-31 Commissariat Energie Atomique Procede de commande d'une machine de tirage de monocristaux

Also Published As

Publication number Publication date
CN1020482C (zh) 1993-05-05
CN1031404A (zh) 1989-03-01
DE3890368C2 (de) 1997-08-14
JPH01503137A (ja) 1989-10-26
JP2635141B2 (ja) 1997-07-30
DE3890368T1 (de) 1989-06-15
EP0313619A4 (de) 1989-07-18
AU1687188A (en) 1988-12-06
ZA882964B (en) 1988-10-28
CA1318224C (en) 1993-05-25
KR890701342A (ko) 1989-12-20
GB2210709B (en) 1992-01-29
KR950004788B1 (ko) 1995-05-10
WO1988008786A1 (en) 1988-11-17
GB8829589D0 (en) 1989-03-08
EP0313619A1 (de) 1989-05-03
AU603220B2 (en) 1990-11-08
GB2210709A (en) 1989-06-14
IL86160A0 (en) 1988-11-15
EP0313619B1 (de) 1992-07-01

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Legal Events

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RH Patent void