IL46173A - Sealing of electrical components - Google Patents
Sealing of electrical componentsInfo
- Publication number
- IL46173A IL46173A IL46173A IL4617374A IL46173A IL 46173 A IL46173 A IL 46173A IL 46173 A IL46173 A IL 46173A IL 4617374 A IL4617374 A IL 4617374A IL 46173 A IL46173 A IL 46173A
- Authority
- IL
- Israel
- Prior art keywords
- sealing member
- substrate
- heat
- sealing
- wall
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title claims description 98
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000011084 recovery Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000004033 plastic Substances 0.000 claims description 17
- 229920003023 plastic Polymers 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 229920000412 polyarylene Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 229910000734 martensite Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 101150018711 AASS gene Proteins 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001000 nickel titanium Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000730 Beta brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical group O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Casings For Electric Apparatus (AREA)
- Cable Accessories (AREA)
- Connector Housings Or Holding Contact Members (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42142973A | 1973-12-03 | 1973-12-03 | |
US05/465,561 US4126758A (en) | 1973-12-03 | 1974-04-30 | Method for sealing integrated circuit components with heat recoverable cap and resulting package |
Publications (2)
Publication Number | Publication Date |
---|---|
IL46173A0 IL46173A0 (en) | 1975-03-13 |
IL46173A true IL46173A (en) | 1977-08-31 |
Family
ID=27025234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL46173A IL46173A (en) | 1973-12-03 | 1974-12-03 | Sealing of electrical components |
Country Status (15)
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5427884Y2 (enrdf_load_stackoverflow) * | 1974-06-27 | 1979-09-08 | ||
JPS57175442U (enrdf_load_stackoverflow) * | 1981-04-30 | 1982-11-05 | ||
JPS58100446A (ja) * | 1981-12-10 | 1983-06-15 | Mitsubishi Electric Corp | 真空封止方法 |
JPS60133741A (ja) * | 1983-12-21 | 1985-07-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US4701573A (en) * | 1985-09-26 | 1987-10-20 | Itt Gallium Arsenide Technology Center | Semiconductor chip housing |
JPH0793393B2 (ja) * | 1988-02-22 | 1995-10-09 | 株式会社東芝 | 半導体装置の金属製シェル |
FR2710810B1 (fr) * | 1993-09-29 | 1995-12-01 | Sagem | Boîtier étanche de micro-composant et procédé d'encapsulation dans un tel boîtier. |
-
1974
- 1974-12-02 CA CA215,092A patent/CA1042116A/en not_active Expired
- 1974-12-02 JP JP49138271A patent/JPS5842622B2/ja not_active Expired
- 1974-12-03 SE SE7415124A patent/SE7415124L/xx unknown
- 1974-12-03 FR FR7439474A patent/FR2253283B1/fr not_active Expired
- 1974-12-03 GB GB52318/74A patent/GB1484177A/en not_active Expired
- 1974-12-03 DE DE19742457116 patent/DE2457116A1/de not_active Ceased
- 1974-12-03 NL NL7415764A patent/NL7415764A/xx not_active Application Discontinuation
- 1974-12-03 BE BE151117A patent/BE822904A/xx unknown
- 1974-12-03 CH CH1602274A patent/CH580379A5/xx not_active IP Right Cessation
- 1974-12-03 IT IT30149/74A patent/IT1033109B/it active
- 1974-12-03 IL IL46173A patent/IL46173A/en unknown
- 1974-12-03 ES ES432527A patent/ES432527A1/es not_active Expired
- 1974-12-03 AU AU76019/74A patent/AU502556B2/en not_active Expired
- 1974-12-03 AT AT964874A patent/ATA964874A/de not_active Application Discontinuation
-
1978
- 1978-04-04 HK HK184/78A patent/HK18478A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AU502556B2 (en) | 1979-08-02 |
BE822904A (fr) | 1975-06-03 |
JPS5842622B2 (ja) | 1983-09-21 |
NL7415764A (nl) | 1975-06-05 |
GB1484177A (en) | 1977-09-01 |
AU7601974A (en) | 1976-06-03 |
JPS5087586A (enrdf_load_stackoverflow) | 1975-07-14 |
HK18478A (en) | 1978-04-14 |
CH580379A5 (enrdf_load_stackoverflow) | 1976-09-30 |
ATA964874A (de) | 1980-04-15 |
FR2253283B1 (enrdf_load_stackoverflow) | 1979-08-10 |
CA1042116A (en) | 1978-11-07 |
IL46173A0 (en) | 1975-03-13 |
SE7415124L (enrdf_load_stackoverflow) | 1975-06-04 |
IT1033109B (it) | 1979-07-10 |
ES432527A1 (es) | 1977-03-01 |
DE2457116A1 (de) | 1975-08-21 |
FR2253283A1 (enrdf_load_stackoverflow) | 1975-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4126758A (en) | Method for sealing integrated circuit components with heat recoverable cap and resulting package | |
US4558510A (en) | Method of producing a semiconductor device | |
US4769345A (en) | Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor | |
US5268533A (en) | Pre-stressed laminated lid for electronic circuit package | |
US6793829B2 (en) | Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices | |
CA1251286A (en) | Cover for semiconductor device packages | |
EP0982773B1 (en) | System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein | |
EP0194475A2 (en) | Semiconductor die attach system | |
KR890003013A (ko) | 반도체 장치용 부품간의 접속 구조물 | |
CA2453003A1 (en) | Use of diverse materials in air-cavity packaging of electronic devices | |
US5100740A (en) | Direct bonded symmetric-metallic-laminate/substrate structures | |
KR100407747B1 (ko) | 반도체장치 | |
IL46173A (en) | Sealing of electrical components | |
GB2084399A (en) | Mounting a semiconductor device | |
EP0257204A1 (en) | Seal for an opening to a cavity and integrated circuit package | |
US6962338B2 (en) | Hermetic seal and a method of making such a hermetic seal | |
US5736675A (en) | Apparatus for providing a hermetically sealed environment | |
WO1995027308A1 (en) | Cavity filled metal electronic package | |
US6214152B1 (en) | Lead frame moisture barrier for molded plastic electronic packages | |
JP3648021B2 (ja) | 気密端子およびその形成方法 | |
US3066248A (en) | Semiconductor device | |
US6306526B1 (en) | Semiconductor packaging metal lid | |
US5201456A (en) | Process for assembly of a metal can on a substrate bearing an integrated circuit | |
JPH06234550A (ja) | 圧縮ガラス導通機構 | |
EP1310990A1 (en) | Bonding method with improved alignment |