IL43966A - Method and apparatus for thin film deposition on a substrate by plasma vapor sputtering - Google Patents

Method and apparatus for thin film deposition on a substrate by plasma vapor sputtering

Info

Publication number
IL43966A
IL43966A IL43966A IL4396674A IL43966A IL 43966 A IL43966 A IL 43966A IL 43966 A IL43966 A IL 43966A IL 4396674 A IL4396674 A IL 4396674A IL 43966 A IL43966 A IL 43966A
Authority
IL
Israel
Prior art keywords
substrate
drum
path
vessel
cylinder
Prior art date
Application number
IL43966A
Other versions
IL43966A0 (en
Original Assignee
Coulter Information Systems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Coulter Information Systems filed Critical Coulter Information Systems
Publication of IL43966A0 publication Critical patent/IL43966A0/en
Publication of IL43966A publication Critical patent/IL43966A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Claims (59)

t OPOSIEp- CLAIMS :
1. Method of coating a thin film on elongate substrate means by electric field sputtering plasma vapor deposition in a pressure vessel which comprises moving the substrate means along a predetermined tortuous and generally circular path established within said vessel while subjecting only the exterior surface of said substrate means to an arcuately configured volume of plasma vapor repeatedly between the ends of the tortuous path, the configuration of the volume of plasma vapor generally conforming to the geometric figure generated by the tortuous path and cathodic target means having the general configuration of at least a partial cylinder surrounding and substantially uniformly spaced from said path.
2. The method as claimed in claim 1 in which the tortuous path is generally convoluted.
3. The method as claimed in claim 1 which includes the steps of moving the substrate means in a substantially continuous movement from the exterior of the vessel into said vessel, then in said tortuous path and then out of said vessel while maintaining said plasma vapor within said vessel . - kl - (
4. The method as claimed in claim 2 in which said path is in addition helical.
5. The method as claimed in claim 1 in which the path defines for the most part a cylinder.
6. The method as claimed in claim 2 in which the path comprises a series of parallel turns arranged side by side and defining for the most part a cylinder except for the bottoms of the turns, there being a bight extending between the end of one turn and the beginning of the following turn at the bottom of the cylinder thereby enabling the shifting of the substrate means from turn to turn while moving the said means circumferentially and axially of the cylinder along said path.
7. The method as claimed in claim 6 in which the surface of the substrate means which defines the exterior of the cylinder is exposed to the plasma.
8. The method as claimed in claim 7 in which the plasma vapor is established on the exterior of the cylinder in a configuration generally conforming to the said cylinder.
9. The method as claimed in claim 1 in which the plasma vapor is established by means of a radio frequency field.
10. The method as claimed in claim 5 in which the plasma vapor is established on the exterior of said cylinder and in annular form coaxial with said cylinder. ( t
11. The method as claimed in claim 6 in which the bights are loosely hanging.
12. The method as claimed in claim 1 which includes magnetically preventing substantial impingement of secondary electrons on said substrate means while it defines said tortuous path.
13. The method as claimed in claim 1 which includes removing surface charge from said substrate means while it defines said tortuous path.
14. The method as claimed in claim 1 which includes controlling the temperature within the vessel to a predetermined range during said coating.
15. Method of thin film deposition which comprises: A. establishing a thin film deposition electric field sputtering condition within a pressure vessel in such a manner as to create a plurality of consecutive plasma vapor volumes forming a generally cylindrical configuration^ B. providing a supply of uncoated substrate and structure to accumulate coated substrate^ C. moving the substrate in the vessel along a generally circular path which carries the substrate from said supply to said accumulating structure while subjecting only the radially outwardly facing surface of said substrate to ( said deposition condition to coat the same on ~ account of impingement of said vapor, said path being such as consecutively to present said outwardly facing surface of said substrate to said plasma vapor volumes whereby to achieve highly uniform deposit by the end of said path, said cylindrical configuration of said plasma vapor volumes being defined by said generally circular path of the substrate and a plurality of arcuate cathodic targets which together define the general configuration of at least partially cylindrical target means surrounding and substantially uniformly spaced from said path, and D. maintaining the substrate at a controlled temperature range below that which would damage the substrate while same is moving on said path.
16. The method as claimed in claim 15 in which said path is tortuous .
17. The method as claimed in claim 16 in which the path is convoluted.
18. The method as claimed in claim 16 in which the convoluted path is helical.
19. The method as claimed in claim 17 in which the convoluted path is formed of a series of coaxially generally circular parallel turns cross-connected from one turn to ( ( the next following at their bottom ends.
20. The method as claimed in claim 15 in which the electrical field is a direct current field.
21. The method as claimed in claim 15 in which the electrical field is a radio frequency field.
22. The method as claimed in claim 17 in which the convoluted path defines generally a cylinder, the said surface of said substrate defines the exterior of said cylinder and the condition is established by providing a high voltage plasma vapor arranged about the exterior of the cylinder and extending over a substantial portion of the surface of said cylinder.
23. The method as claimed in claim 15 in which the substrate is moved through the vessel while being moved on said path.
24. The method as claimed in claim 22 in which the surface of the substrate opposite said first-mentioned surface is blocked from being subjected to said thin film depositing condition while defining said convoluted path.
25. The method as claimed in claim 22 in which the voltage is r.f. - h5 -
26. The method as claimed in claim 22 in which the-controlled temperature range is maintained at least by magneticall sweeping secondary electrons relative to said substrate in a direction carrying them transversely of the surface of the substrate while defining said convoluted path.
27. The method as claimed in claim 22 in which the substrate is moved through the vessel while defining said path.
28. The method as claimed in claim 22 in which surface charge is electrically removed from said substrate while said substrate is moving in said vessel.
29. The method as claimed in claim 15 in which the controlled temperature range is maintained at least by heat exchange through said substrate.
30. The method as claimed in claim 15 in which surface charge is electrically removed from said substrate while it is moving on said path.
31. Apparatus for carrying out the method according to any one of claims 1 to 30 comprising a supply of substrate to be coated, an accumulator for receiving the coated substrate, a pressure vessel capable of having established therein a plasma vapor deposition condition, guide structure disposed within the vessel and arranged to lead ( ( the substrate from the supply to the accumulator in a configuration establishing a convoluted path for substantially lengthwise movement of said substrate and the said path being such as repeatedly to expose one surface of said substrate to the depositing condition while said substrate is in said convoluted path.
32. The apparatus according to claim 31 in which structure is provided for controlling at least the surface temperature of the substrate while it is moving along the path .
33. The apparatus according to claims 31 or 32 in which said guide structure comprises a drum having at least a substantial portion of each convolution engaging the exterior surface of said drum.
34. The apparatus according to claims 31 or 32 in which said guide structure comprises a drum havhg at least a substantial portion of each convolution engaging the exterior surface thereof and a mechanism to rotate the drum and carry the convolutions circumferentially of the drum and also to move the convolutions axially along the length of the drum.
35. The apparatus according to claim 34 in which said mechanism for moving the convolutions includes a pair of rollers engaging the surface of said drum and having the substrate engaging said exterior surface of ( ( the drum tightly pressed against said surface but having^ the substrate subtended between the rollers opposite said surface forming said bights loosely.
36. The apparatus according to claim 35 in which one of said rollers is mounted for applying continuous pressure against said drum and a biasing structure to overdrive the other roller to maintain tension on the portion of said substrate engaging said drum surface.
37. The apparatus according to any one of claims 31 to 36 and a target of arcuate configuration generally coaxial and telescopically of said drum and spaced outwardly thereof to form an annular plasma vapor gap between the said target and the outer surfaces of the convolutions .
38. The apparatus according to claim 37 in which there are a plurality of arcuate target members at least some of which are circumferentially spaced apart, and structure for individually adjusting the respective members .
39. The apparatus according to claim 37 in which magnetic members are provided for establishing a magnetic field across said gap to sweep secondary electrons out of said path.
40. The apparatus according to claim 39 in which said magnetic members are on the inside of said drum and outside of said target and the field is radial.
41. The apparatus according to any one of claims 31 to 40 in which a source of photons is provided in said vessel to decrease surface charge on said substrate.
42. The apparatus according to claim 34 in which said drum surface is provided with a heat absorber.
43. The apparatus according to claim 34 in which said drum surface is provided with a heat absorbing block coating.
44. Apparatus according to claim 31 which, said pressure vessel includes an enclosing side wall and enclosing end walls and means for establishing a sputtering plasma condition within the vessel and including i. anode means in the form of a rotary drum mounted on one end wall for rotation on a shaft defining an axis passing through both end walls , ii. cathode means comprising a plurality of targets on the interior of the vessel secured to the side wall and each target having a planar surface of the material to be sputtered which faces the exterior ί ( ( d surface of the drum and is space/ there¬ from, the targets being circumferentially spaced around the periphery of the drum and said planar surfaces generally defining at least part of a cylindrical surface that is coaxial with but larger in diameter than the drum whereby to form a plurality of consecutive arcuate gaps within which the sputtering plasma is adapted to be established, and iii. a high voltage source connected in a circuit which includes the anode means and the cathode means, the cathode means being at a substantially high negative voltage with respect to the anode means, the substrate is flexible, the supply being arranged in a reel form, the substrate adapted to be stripped off from the reel and pass through said gaps, the accumulator being in reel form, the structure for guiding and moving cooperating with the drum to cause movement of the substrate while passing within the vessel from the supply to the take-up means in said tortuous path, said tortuous path including at least a portion of a circular turn around the drum with the substrate tightly engaged against the surface of the ( ( drum and said path arranged to expose only the outer surface of the substrate to the sputtering plasma condition of respective gaps by guiding said substrate through said gaps while so engaged against the drum.
45. The apparatus as claimed in claim 44 in which the tortuous path includes more than a circular turn around the drum whereby the outer surface of the substrate will be subjected to the sputtering plasma condition of the respective gaps more than one time each.
46. The apparatus as claimed in claim 44 in which the enclosing side wall is of metal and the targets are insulated from the latter enclosing wall.
47. The apparatus as claimed in claim 44 in which the anode is at ground potential.
48. The apparatus as claimed in claim 44 in which the anode is negative with respect to ground.
49. The apparatus as claimed in claim 44 in which the cathode planar surfaces are arcuate.
50. The apparatus as claimed in claim 44 in which the supply and take-up means are both on the interior of the vessel. (
51. The apparatus as claimed in claim 44 in which * means are provided to control the temperature of the substrate by controlling the temperature of the surface of the drum.
52. The apparatus as claimed in claim 44 in which means are provided in the drum adjacent the surface thereof for controlling the temperature of the surface of the drum.
53. The apparatus as claimed in claim 44 in which first heat exchange liquid conduit means are provided in the drum adjacent the surface thereof for controlling the temperature of the surface of the drum, said drum having second heat exchange liquid conduit means connected with said first heat exchange liquid conduit means and extending through said drum shaft to the exterior of said vessel and adapted to be coupled to an external source of heat exchange liquid, the arrangement being such as to provide for circulation of said liquid through said conduits while the coating is being carried out.
54. The apparatus as claimed in claim 44 in which there are means for individually adjusting the gap of each target by moving the target radially relative to the drum.
55. The apparatus as claimed in claim 54 in which means are provided for cooling the targets comprising coolant conduits in the targets and means for extending passageways for carrying liquid coolants to and from the targets through the side enclosing wall and said passageways being coupled to a source of such coolant exterior of the vessel.
56. The apparatus as claimed in claim 55 in which there are means to transfer the substrate in axial direction along the surface of the drum while said substrate is being laid onto such surface at one axial end of the turns and being stripped off at the other axial end of the turns.
57. The apparatus as claimed in claim 56 in which the transfer means comprise turn shifting means.
58. The apparatus as claimed in claim 57 in which the transfer means comprise structure for forming a cross-connecting bight at the bottom of the drum between respective adjacent turns.
59. The apparatus as claimed in claim 31 in which the tortuous path comprises at least one convolution and said structure comprises a drum having at least a substantial portion of the convolution engaging the exterior surface of the drum.
IL43966A 1973-01-12 1974-01-07 Method and apparatus for thin film deposition on a substrate by plasma vapor sputtering IL43966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US323133A US3884787A (en) 1973-01-12 1973-01-12 Sputtering method for thin film deposition on a substrate

Publications (2)

Publication Number Publication Date
IL43966A0 IL43966A0 (en) 1974-06-30
IL43966A true IL43966A (en) 1976-12-31

Family

ID=23257860

Family Applications (1)

Application Number Title Priority Date Filing Date
IL43966A IL43966A (en) 1973-01-12 1974-01-07 Method and apparatus for thin film deposition on a substrate by plasma vapor sputtering

Country Status (15)

Country Link
US (1) US3884787A (en)
JP (1) JPS5747267B2 (en)
AT (1) AT341335B (en)
BE (1) BE809464A (en)
CA (1) CA1018475A (en)
CH (1) CH597622A5 (en)
DD (1) DD109035A5 (en)
DE (1) DE2400587A1 (en)
FR (1) FR2322667A1 (en)
GB (1) GB1461921A (en)
IL (1) IL43966A (en)
IT (1) IT1002650B (en)
LU (1) LU69122A1 (en)
NL (1) NL7317670A (en)
SE (1) SE392919B (en)

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Also Published As

Publication number Publication date
DD109035A5 (en) 1974-10-12
ATA9674A (en) 1977-05-15
SE392919B (en) 1977-04-25
GB1461921A (en) 1977-01-19
FR2322667B1 (en) 1978-10-27
JPS5747267B2 (en) 1982-10-08
IL43966A0 (en) 1974-06-30
FR2322667A1 (en) 1977-04-01
NL7317670A (en) 1974-07-16
BE809464A (en) 1974-07-08
AT341335B (en) 1978-02-10
JPS49104972A (en) 1974-10-04
CA1018475A (en) 1977-10-04
CH597622A5 (en) 1978-04-14
IT1002650B (en) 1976-05-20
LU69122A1 (en) 1975-12-09
US3884787A (en) 1975-05-20
DE2400587A1 (en) 1974-07-18

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