CA1081656A - Sputtering device and method of sputtering by means of such a device - Google Patents
Sputtering device and method of sputtering by means of such a deviceInfo
- Publication number
- CA1081656A CA1081656A CA281,665A CA281665A CA1081656A CA 1081656 A CA1081656 A CA 1081656A CA 281665 A CA281665 A CA 281665A CA 1081656 A CA1081656 A CA 1081656A
- Authority
- CA
- Canada
- Prior art keywords
- cathode
- sputtering
- magnet device
- magnet
- tubular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Abstract
ABSTRACT:
When in a sputtering device which comprises in an envelope a cathode which at its surface consists of the material to be sputtered, a magnet device for generating one or more magnetic fields by which at least one electron trap before the surface of the cathode is determined, and an anode, said electron traps can be moved along the cathode surface, it is possible by a continuous or periodic movement of said electron traps to sputter the cathode very re-gularly so that the cathode material is used very efficiently.
When in a sputtering device which comprises in an envelope a cathode which at its surface consists of the material to be sputtered, a magnet device for generating one or more magnetic fields by which at least one electron trap before the surface of the cathode is determined, and an anode, said electron traps can be moved along the cathode surface, it is possible by a continuous or periodic movement of said electron traps to sputter the cathode very re-gularly so that the cathode material is used very efficiently.
Description
The invention relates to a sputtering device comprising in an envelope a cathode which comprises at its surface the material to be sputtered, a magnet device for generating one or more magnetic fields by which at least one electron trap before the surface is determined, and an anode.
The invention also relates to a method of sputtering material by means of such a device.
An electron trap is formed by magnetic field lines which extend from the cathode surface and describe an arc thereabove and return thereto again. Said field lines thus form a magnetic mirror for the electrons originating from the cathode surface. In this manner the electrons are retained near the cathode.
Such a device and method are known from the published ~etherlands patent application 7,211,911, Telic Corporation, filed September 1, 1972. Such a device is used in providing thin films on flat and curved sub-strates, layers for the manufacture of integrated cir-cuits, layers having magnetic properties, optical layers, in providing internal coatings in hollow spaces, during the manufacture of resistors and all sputtering processes in which a low substrate temperature is desired.
The invention also relates to a method of sputtering material by means of such a device.
An electron trap is formed by magnetic field lines which extend from the cathode surface and describe an arc thereabove and return thereto again. Said field lines thus form a magnetic mirror for the electrons originating from the cathode surface. In this manner the electrons are retained near the cathode.
Such a device and method are known from the published ~etherlands patent application 7,211,911, Telic Corporation, filed September 1, 1972. Such a device is used in providing thin films on flat and curved sub-strates, layers for the manufacture of integrated cir-cuits, layers having magnetic properties, optical layers, in providing internal coatings in hollow spaces, during the manufacture of resistors and all sputtering processes in which a low substrate temperature is desired.
- 2 -,.. ~ i~;: :
It is known from the published German patent application 2,417,288, Airco Inc., filed March 9, 1974 that by a magnet device an electron trap ~an be obtained which retains the electrons originating from the cathode until they have consumed their energy in ionizing col-lisions so that extra plasma is formed. This results in a higher sputtering rate. However, it is also known from Physical Vapour Deposition, pages 114 and 115, Airco Inc., U.S.A. 1976, that said sputtering takes place very unevenly and results in a channel-like cavity of the cathode. This has a number of disadvantages. The cathode has to be replaced when only a small part of the cathode has sputtered. In addition, the channel-like cavity of the cathode detrimentally influences the direction in which the particles of material move away from the cathode and the reproduceability of the sputtering process.
It is therefore an object of the invention to provide a device and a method which does not ex-hibit the said disadvantages and in which a very uniform and efficient consumption of the cathode mater-ial can take place.
Another object of the invention is to pro-vide a device and a method with which several types of material can be sputtered in a simple manner and without exchanging the whole cathode.
It is known from the published German patent application 2,417,288, Airco Inc., filed March 9, 1974 that by a magnet device an electron trap ~an be obtained which retains the electrons originating from the cathode until they have consumed their energy in ionizing col-lisions so that extra plasma is formed. This results in a higher sputtering rate. However, it is also known from Physical Vapour Deposition, pages 114 and 115, Airco Inc., U.S.A. 1976, that said sputtering takes place very unevenly and results in a channel-like cavity of the cathode. This has a number of disadvantages. The cathode has to be replaced when only a small part of the cathode has sputtered. In addition, the channel-like cavity of the cathode detrimentally influences the direction in which the particles of material move away from the cathode and the reproduceability of the sputtering process.
It is therefore an object of the invention to provide a device and a method which does not ex-hibit the said disadvantages and in which a very uniform and efficient consumption of the cathode mater-ial can take place.
Another object of the invention is to pro-vide a device and a method with which several types of material can be sputtered in a simple manner and without exchanging the whole cathode.
- 3 -:, ,. ..
~, :-~
101~16S6 P~IN 8456 16.3.77 According to the invention, a device of the kind described in the preamble is characterized in that the electron trap can be moved along the surface.
As a result of this it is possible, periodically or continuously, to always expose another part of the surface of the cathode to the discharge, so that a very uniform sputtering is possible.
Such a cathode may be constructed so as ; to be flat, the magnet device being movable substan-tially parallel to the cathode surface and prefer-ably in one direction. Preferably, however, the cathode is tubular and a number of mutually spaced magnets facing each other with their north or south poles and forming the magnet device are arranged so as to be movable axially in or around said tubular cathode in the axial direction.
Such a tubular cathode may have a square or circular cross-section or may have any other shape with which the direction in which the sputter-ed particles move can be influenced. It is, of course, alternatively possible to move the tubular envelope with respect to the magnet device.
By manufacturing the cathode surface from a number of different materials to be sputtered, any desired composition of materials can be realized by moving the electron trap(s~ in a simple manner.
Such a cathode made of titanium can be used .,' ~ ' " : .: '.
~081656 PI-IN 8456 16.3.77 as a sputter source in a titanium sallimation pump.
The device is suitable for high frequency and direct current applications.
The sputtering device in which in a tubular cathode a number of spaced magnets forming the magnet device and facing each other with their north or south poles in the axial direction are arranged so as to be movable axially, is particularly suitable for providing a very uniform coating in a hollow space, for example, a metal mirror in a lamp or tube.
The invention will be described in greater detail with reference to a drawing, in which:
Figure 1 shows diagrammatically a flat cathode for a device according to the invention having a movable electron trap, Figures 2 and 3 are sectional view of parts of tubular cathodes having several movable electron traps, Figure 4 is a sectional view of a tubular cathode for a device according to the invention, Figures 5 and 6 are possible sectional views of such a cathode, Figure 7 shows diagrammatically a device according to the invention,and Figure 8 is a sectional view of a tubular cathode for a device according to the invention.
.
108~6S6 PHN 8456 Figure 1 shows diagrammatically a flat cathode 1 for a device according to the invention. The direc-tionof the field lines 2 generated by the magnet de-vice is shown. Said field lines form an electron trap because a magnetic mirror is created before the cathode surface 3. In the elliptical region 4 below the field lines a channel-shaped cavity will be formed by the sputtering of the cathode material, By moving the electron trap, preferably in the direc-t~on of the arrow 33, said erosion can be distributed over the whole surface 3. When the cathode surface is composed of several types of material, any desired composition of materials can be realized by moving the electron trap. During sputtering, the cathode 1 has a negative potential with respect to the anode 5 of approximately 800 Volts. In practice voltages are used of a few hundred Volts up to a few kVolts.
In the sputtering space a pressure of 10 3 to 10 Torr usually prevails. As a sputtering gas may be used, for example, argon, neon, or reactive gases such as 2' N2 or mixtures thereof.
Figure 2 shows a part of a tubular cathode 6 for a device according to the invention. Said tu-bular cathode comprises-a number of magnets 7 which are arranged at a distance from each other and have thelr corresponding poles facing 6ach other. Said magnets 7 are permanent magnets in this case. How-: . . . . . . .
-10816S6 16~3.77 ever, they may also be electromagnets. In this case, soft iron discs 8 are provided between the magnets and influence the direction of the entrance and e~it of the field lines. However, said discs may also be absent or be manufactured from a material other than soft iron. As a result of the magnets, electron traps 9 situated around the cathode are formed. The magnets can be moved wlth respect to the cathode surface so that the formation of channel-like grooves around the cathode can be prevented by periodic or continuous displacement of the magnet device in the direction of the arrow 33. It is, of course, alternatively possible to move the cathode surface with respect to the magnet devioe. The anode 10 is in the form of a ring.
Figure 3 also shows a tubular cathode. In this case the magnets consist of permanent magnetic rings 11 and the electron traps are situated on the inside of the tubular cathode. In this case the anode 12 is in the form of a rod.
. ., Figure 4 is a sectional view of a tubular cathode for a device according to the invention.
The cathode surface is determined by a tube 13 hav-ing an inside diameter of 28 mm and an outside dia-meter of 32 mm and is closed on one side. Said tube, 300 mm long, comprises a number of 6 mm thick an-nular magnets 14 which are situated around a water ,; ' .
P~l~ 8456 16.3.77 inlet tube 15 for cooling water. The cooling water flows along the wall of the tube 13 via the spaces 16 to the water outlet 17. The water is admitted via the inlet aperture 18. By means of an 0-ring seal 19 the magnet device 20 is placed in the holder 21 so as to be movable. The said holder 21 is arrang-ed so as to be insulated with respect to the housing 23 of the device by means of a glass plate 22. When a large number of magnets are used, a large number of electron traps are obtained. The kno~n cylindri-.cal sputtering systems require very strong and large magnets, since the magnetic field must be constant and parallel to the surface of the cathode through-out the length of the cylindrical cathode.
Figures 5 and 6 show possible cross-sections of such a cathode. The space 16 for passing the cool-ing water is situated between a magnet 14 and the in-ner wall of the tube 13. The magnets 14 are situated around the cooling water tube 15. The electrons trapped by the electron trap will cover a cycloidal track 32 as is shown in Figure 6.
It is alternatively possible to construct the tube 13 so as to be double-jacketed so that the inner tube constantly serves as a holder for the magnet device and the outer tube can or cannot be ; moved around the inner tube and serves as a cathode surface which can easily be replaced.
.
: .
.. .
10~6S6 16.3.77 ~igure 7 shows diagrammatically a device ac-cording to the invention. The cathode 24 is secured in the housing 23 by means of a glass plate 22 and is connected to a high frequency or direct current supply 25 for applying the desired potential between the cathode 24 and the anode 26 which in this case is annular. After evacuating the housing 23 via gas outlet aperture 27, the housing 23 is filled with argon to a pressure of 10 3 Torr via the gas inlet ~ .
aperture 28. The cathode 24 is cooled by cooling water, as described, via the connections 29 and 30.
i The material sputtered from the cathode is deposit-ed on the substrate 31 as a layer or a thin film.
The mag~et device is reciprocated continuously or periodically by means of a driving mechanism 34. As was to be expeoted, the sputtering rate for a device according to the invention is substantially equally large as for the known devices. For example, a sput-tering rate for copper of 10~000 ~/minute was measur-ed with a direct current discharge with a supplied power of 2 kW and a distance between the cathode and the substrate of 5 cm. With a high frequency dis-:
charge the sputtering rate was approximately 5000 ~/
minute with the same power and electrode/substrate arrangement. However, the cathode according to the invention could be used 3 to 5 x longer than when the magnet device was not moved. Hence, the use :~ _ g ~, . . .
PI~N 8L~56 10816S6 1 6.3.77 of the invention means that the sputtering process need be interrupted less frequently and that the cathode material to be sputtered is used more effi-ciently.
Figure 8 is a sectional view of a tubular cathode according to the invention in which the cathode surface consists of chromium 35 and copper 36. By moving the magnet device 20 a choice can be made from chromium and copper or a mixture thereof.
In the position shown of the magnet device, copper 36 is sputtered which is deposited on the inner wall ` of the glass tube 37 and forms a:thin coating. Of course, it is alternatively possible not to com-pose the magnet device from one group of magnets as is shown in Figure 8, but of several groups.
It is also possible to compose the cathode surface of more than two different materials, This type of cathodes is particularly suitable for coating the inside of tubes of metal or glass or of en-velopes o,f, for example, lamps. The whole cathode with the associated anode 38, in this case amlular, can be moved through a tube while sputtering so that said tube is coated on its side. By means of a cathode as shown in Figure 3, rods or tubes can be coated on the outside.
. ' . - .
: ~ ' ' : '
~, :-~
101~16S6 P~IN 8456 16.3.77 According to the invention, a device of the kind described in the preamble is characterized in that the electron trap can be moved along the surface.
As a result of this it is possible, periodically or continuously, to always expose another part of the surface of the cathode to the discharge, so that a very uniform sputtering is possible.
Such a cathode may be constructed so as ; to be flat, the magnet device being movable substan-tially parallel to the cathode surface and prefer-ably in one direction. Preferably, however, the cathode is tubular and a number of mutually spaced magnets facing each other with their north or south poles and forming the magnet device are arranged so as to be movable axially in or around said tubular cathode in the axial direction.
Such a tubular cathode may have a square or circular cross-section or may have any other shape with which the direction in which the sputter-ed particles move can be influenced. It is, of course, alternatively possible to move the tubular envelope with respect to the magnet device.
By manufacturing the cathode surface from a number of different materials to be sputtered, any desired composition of materials can be realized by moving the electron trap(s~ in a simple manner.
Such a cathode made of titanium can be used .,' ~ ' " : .: '.
~081656 PI-IN 8456 16.3.77 as a sputter source in a titanium sallimation pump.
The device is suitable for high frequency and direct current applications.
The sputtering device in which in a tubular cathode a number of spaced magnets forming the magnet device and facing each other with their north or south poles in the axial direction are arranged so as to be movable axially, is particularly suitable for providing a very uniform coating in a hollow space, for example, a metal mirror in a lamp or tube.
The invention will be described in greater detail with reference to a drawing, in which:
Figure 1 shows diagrammatically a flat cathode for a device according to the invention having a movable electron trap, Figures 2 and 3 are sectional view of parts of tubular cathodes having several movable electron traps, Figure 4 is a sectional view of a tubular cathode for a device according to the invention, Figures 5 and 6 are possible sectional views of such a cathode, Figure 7 shows diagrammatically a device according to the invention,and Figure 8 is a sectional view of a tubular cathode for a device according to the invention.
.
108~6S6 PHN 8456 Figure 1 shows diagrammatically a flat cathode 1 for a device according to the invention. The direc-tionof the field lines 2 generated by the magnet de-vice is shown. Said field lines form an electron trap because a magnetic mirror is created before the cathode surface 3. In the elliptical region 4 below the field lines a channel-shaped cavity will be formed by the sputtering of the cathode material, By moving the electron trap, preferably in the direc-t~on of the arrow 33, said erosion can be distributed over the whole surface 3. When the cathode surface is composed of several types of material, any desired composition of materials can be realized by moving the electron trap. During sputtering, the cathode 1 has a negative potential with respect to the anode 5 of approximately 800 Volts. In practice voltages are used of a few hundred Volts up to a few kVolts.
In the sputtering space a pressure of 10 3 to 10 Torr usually prevails. As a sputtering gas may be used, for example, argon, neon, or reactive gases such as 2' N2 or mixtures thereof.
Figure 2 shows a part of a tubular cathode 6 for a device according to the invention. Said tu-bular cathode comprises-a number of magnets 7 which are arranged at a distance from each other and have thelr corresponding poles facing 6ach other. Said magnets 7 are permanent magnets in this case. How-: . . . . . . .
-10816S6 16~3.77 ever, they may also be electromagnets. In this case, soft iron discs 8 are provided between the magnets and influence the direction of the entrance and e~it of the field lines. However, said discs may also be absent or be manufactured from a material other than soft iron. As a result of the magnets, electron traps 9 situated around the cathode are formed. The magnets can be moved wlth respect to the cathode surface so that the formation of channel-like grooves around the cathode can be prevented by periodic or continuous displacement of the magnet device in the direction of the arrow 33. It is, of course, alternatively possible to move the cathode surface with respect to the magnet devioe. The anode 10 is in the form of a ring.
Figure 3 also shows a tubular cathode. In this case the magnets consist of permanent magnetic rings 11 and the electron traps are situated on the inside of the tubular cathode. In this case the anode 12 is in the form of a rod.
. ., Figure 4 is a sectional view of a tubular cathode for a device according to the invention.
The cathode surface is determined by a tube 13 hav-ing an inside diameter of 28 mm and an outside dia-meter of 32 mm and is closed on one side. Said tube, 300 mm long, comprises a number of 6 mm thick an-nular magnets 14 which are situated around a water ,; ' .
P~l~ 8456 16.3.77 inlet tube 15 for cooling water. The cooling water flows along the wall of the tube 13 via the spaces 16 to the water outlet 17. The water is admitted via the inlet aperture 18. By means of an 0-ring seal 19 the magnet device 20 is placed in the holder 21 so as to be movable. The said holder 21 is arrang-ed so as to be insulated with respect to the housing 23 of the device by means of a glass plate 22. When a large number of magnets are used, a large number of electron traps are obtained. The kno~n cylindri-.cal sputtering systems require very strong and large magnets, since the magnetic field must be constant and parallel to the surface of the cathode through-out the length of the cylindrical cathode.
Figures 5 and 6 show possible cross-sections of such a cathode. The space 16 for passing the cool-ing water is situated between a magnet 14 and the in-ner wall of the tube 13. The magnets 14 are situated around the cooling water tube 15. The electrons trapped by the electron trap will cover a cycloidal track 32 as is shown in Figure 6.
It is alternatively possible to construct the tube 13 so as to be double-jacketed so that the inner tube constantly serves as a holder for the magnet device and the outer tube can or cannot be ; moved around the inner tube and serves as a cathode surface which can easily be replaced.
.
: .
.. .
10~6S6 16.3.77 ~igure 7 shows diagrammatically a device ac-cording to the invention. The cathode 24 is secured in the housing 23 by means of a glass plate 22 and is connected to a high frequency or direct current supply 25 for applying the desired potential between the cathode 24 and the anode 26 which in this case is annular. After evacuating the housing 23 via gas outlet aperture 27, the housing 23 is filled with argon to a pressure of 10 3 Torr via the gas inlet ~ .
aperture 28. The cathode 24 is cooled by cooling water, as described, via the connections 29 and 30.
i The material sputtered from the cathode is deposit-ed on the substrate 31 as a layer or a thin film.
The mag~et device is reciprocated continuously or periodically by means of a driving mechanism 34. As was to be expeoted, the sputtering rate for a device according to the invention is substantially equally large as for the known devices. For example, a sput-tering rate for copper of 10~000 ~/minute was measur-ed with a direct current discharge with a supplied power of 2 kW and a distance between the cathode and the substrate of 5 cm. With a high frequency dis-:
charge the sputtering rate was approximately 5000 ~/
minute with the same power and electrode/substrate arrangement. However, the cathode according to the invention could be used 3 to 5 x longer than when the magnet device was not moved. Hence, the use :~ _ g ~, . . .
PI~N 8L~56 10816S6 1 6.3.77 of the invention means that the sputtering process need be interrupted less frequently and that the cathode material to be sputtered is used more effi-ciently.
Figure 8 is a sectional view of a tubular cathode according to the invention in which the cathode surface consists of chromium 35 and copper 36. By moving the magnet device 20 a choice can be made from chromium and copper or a mixture thereof.
In the position shown of the magnet device, copper 36 is sputtered which is deposited on the inner wall ` of the glass tube 37 and forms a:thin coating. Of course, it is alternatively possible not to com-pose the magnet device from one group of magnets as is shown in Figure 8, but of several groups.
It is also possible to compose the cathode surface of more than two different materials, This type of cathodes is particularly suitable for coating the inside of tubes of metal or glass or of en-velopes o,f, for example, lamps. The whole cathode with the associated anode 38, in this case amlular, can be moved through a tube while sputtering so that said tube is coated on its side. By means of a cathode as shown in Figure 3, rods or tubes can be coated on the outside.
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: ~ ' ' : '
Claims (6)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A sputtering device comprising in an envelope a cathode which comprises at its surface the material to be sputtered, a magnet device for generating one or more magnetic fields by which at least one electron trap for the surface is determined, and an anode, characterized in that the electron trap can be moved along the surface of the cathode.
2. A sputtering device as claimed in Claim 1, charac-terized in that the cathode is substantially flat and the magnet device can be moved substantially parallel to the cathode surface.
3. A sputtering device as claimed in Claim 1, charac-terized in that the cathode is tubular and a number of magnets which are spaced and have their north or south poles facing each other and form the magnet device are arranged so as to be movable axially in or around said tubular cathode in the axial direction.
4. A sputtering device as claimed in Claim 1, 2 or 3, characterized in that the cathode surface is composed of several materials to be sputtered.
5. A method of sputtering material by means of a device as claimed in Claim 1, 2 or 3, characterized in that by moving the magnet device parallel to the cathode surface a move-ment of the electron trap(s) and hence a regular sputtering of the material of the cathode is obtained.
6. A method of sputtering material by means of a device as claimed in Claim 1, 2 or 3, characterized in that by moving the magnet device parallel to the cathode surface a move-ment of one or more electron traps takes place along the surface to a surface part of a different kind of material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7607473A NL7607473A (en) | 1976-07-07 | 1976-07-07 | SPRAYING DEVICE AND METHOD FOR SPRAYING WITH SUCH A DEVICE |
| NL7607473 | 1976-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1081656A true CA1081656A (en) | 1980-07-15 |
Family
ID=19826537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA281,665A Expired CA1081656A (en) | 1976-07-07 | 1977-06-29 | Sputtering device and method of sputtering by means of such a device |
Country Status (14)
| Country | Link |
|---|---|
| JP (2) | JPS536282A (en) |
| AT (1) | AT352493B (en) |
| AU (1) | AU506847B2 (en) |
| BR (1) | BR7704375A (en) |
| CA (1) | CA1081656A (en) |
| CH (1) | CH618289A5 (en) |
| DE (1) | DE2729286A1 (en) |
| ES (1) | ES460405A1 (en) |
| FR (1) | FR2358020A1 (en) |
| GB (1) | GB1587566A (en) |
| IT (1) | IT1076083B (en) |
| NL (1) | NL7607473A (en) |
| SE (1) | SE7707729L (en) |
| ZA (1) | ZA773538B (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4275126A (en) * | 1978-04-12 | 1981-06-23 | Battelle Memorial Institute | Fuel cell electrode on solid electrolyte substrate |
| CA1141704A (en) * | 1978-08-21 | 1983-02-22 | Charles F. Morrison, Jr. | Magnetically enhanced sputtering device |
| GB2051877B (en) * | 1979-04-09 | 1983-03-02 | Vac Tec Syst | Magnetically enhanced sputtering device and method |
| JPS584923Y2 (en) * | 1979-04-20 | 1983-01-27 | 株式会社 徳田製作所 | Horizontal sputtering equipment |
| US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| JPS59116375A (en) * | 1982-11-26 | 1984-07-05 | Kawasaki Heavy Ind Ltd | Sputtering device |
| DE3316548C2 (en) * | 1983-03-25 | 1985-01-17 | Flachglas AG, 8510 Fürth | Process for coating a transparent substrate |
| JPS59179782A (en) * | 1983-03-31 | 1984-10-12 | Kawasaki Heavy Ind Ltd | Structure in electrode part of sputtering device |
| DE3406953C2 (en) * | 1983-04-19 | 1986-03-13 | Balzers Hochvakuum Gmbh, 6200 Wiesbaden | Method for heating material to be heated in a vacuum recipient |
| JPS59169352U (en) * | 1983-04-25 | 1984-11-13 | 川崎重工業株式会社 | Electrode structure of sputtering equipment |
| CH659346A5 (en) * | 1983-05-10 | 1987-01-15 | Balzers Hochvakuum | DEVICE FOR TREATING THE INTERNAL WALL OF A TUBE. |
| CH668565A5 (en) * | 1986-06-23 | 1989-01-13 | Balzers Hochvakuum | METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY. |
| AT392291B (en) * | 1987-09-01 | 1991-02-25 | Miba Gleitlager Ag | Rod-shaped magnetron or sputtering cathode arrangement, sputtering process and apparatus for carrying out the process |
| DE4018914C1 (en) * | 1990-06-13 | 1991-06-06 | Leybold Ag, 6450 Hanau, De | |
| DE4022708A1 (en) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | ETCHING OR COATING PLANTS |
| DE4042417C2 (en) * | 1990-07-17 | 1993-11-25 | Balzers Hochvakuum | Etching or coating system and method for igniting or intermittent operation |
| DE4107505A1 (en) * | 1991-03-08 | 1992-09-10 | Leybold Ag | METHOD FOR OPERATING A SPUTTER, AND DEVICE FOR CARRYING OUT THE METHOD |
| WO1995032517A1 (en) * | 1994-05-24 | 1995-11-30 | Rossiisko-Shveitsarskoe Aktsionernoe Obschestvo Zakrytogo Tipa 'nova' | Method of producing an electrical discharge and a device for carrying out said method |
| DE19623359A1 (en) * | 1995-08-17 | 1997-02-20 | Leybold Ag | Device for coating a substrate by vaporisation of a rotary tubular target |
| DE19652634C2 (en) * | 1996-09-13 | 2002-12-19 | Euromat Ges Fuer Werkstofftech | Process for the internal coating of a metallic component, in particular a component with a cylindrical cavity, a device for carrying it out and the use of the method |
| DE19727647A1 (en) * | 1997-06-12 | 1998-12-17 | Leybold Ag | Cathodic sputtering apparatus with adjustable target |
| JP5781408B2 (en) * | 2011-09-07 | 2015-09-24 | 株式会社アルバック | Magnetron sputter cathode |
| US9111734B2 (en) | 2013-10-31 | 2015-08-18 | General Electric Company | Systems and method of coating an interior surface of an object |
| US20150114828A1 (en) * | 2013-10-31 | 2015-04-30 | General Electric Company | Systems and method of coating an interior surface of an object |
| JP2022178656A (en) * | 2021-05-20 | 2022-12-02 | 大学共同利用機関法人 高エネルギー加速器研究機構 | Non-evaporation type getter coating device, manufacturing methods for non-evaporation type getter coating vessel and pipeline, and non-evaporation type getter coating vessel and pipeline |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3884793A (en) * | 1971-09-07 | 1975-05-20 | Telic Corp | Electrode type glow discharge apparatus |
| JPS516017B2 (en) * | 1972-09-08 | 1976-02-24 | ||
| US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
| US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
-
1976
- 1976-07-07 NL NL7607473A patent/NL7607473A/en not_active Application Discontinuation
-
1977
- 1977-06-13 ZA ZA00773538A patent/ZA773538B/en unknown
- 1977-06-29 CA CA281,665A patent/CA1081656A/en not_active Expired
- 1977-06-29 DE DE19772729286 patent/DE2729286A1/en active Granted
- 1977-07-01 AU AU26688/77A patent/AU506847B2/en not_active Expired
- 1977-07-04 CH CH820677A patent/CH618289A5/en not_active IP Right Cessation
- 1977-07-04 SE SE7707729A patent/SE7707729L/en unknown
- 1977-07-04 BR BR7704375A patent/BR7704375A/en unknown
- 1977-07-04 GB GB27861/77A patent/GB1587566A/en not_active Expired
- 1977-07-04 IT IT25372/77A patent/IT1076083B/en active
- 1977-07-05 JP JP8035277A patent/JPS536282A/en active Pending
- 1977-07-05 ES ES460405A patent/ES460405A1/en not_active Expired
- 1977-07-05 FR FR7720561A patent/FR2358020A1/en active Granted
- 1977-07-06 AT AT482777A patent/AT352493B/en not_active IP Right Cessation
-
1983
- 1983-08-22 JP JP1983128511U patent/JPS6028689Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7607473A (en) | 1978-01-10 |
| GB1587566A (en) | 1981-04-08 |
| AT352493B (en) | 1979-09-25 |
| SE7707729L (en) | 1978-01-08 |
| JPS536282A (en) | 1978-01-20 |
| AU506847B2 (en) | 1980-01-24 |
| FR2358020A1 (en) | 1978-02-03 |
| CH618289A5 (en) | 1980-07-15 |
| ES460405A1 (en) | 1978-05-01 |
| JPS6028689Y2 (en) | 1985-08-30 |
| FR2358020B1 (en) | 1982-11-12 |
| DE2729286A1 (en) | 1978-01-12 |
| BR7704375A (en) | 1978-05-16 |
| AU2668877A (en) | 1979-01-04 |
| DE2729286C2 (en) | 1988-05-11 |
| IT1076083B (en) | 1985-04-22 |
| ATA482777A (en) | 1979-02-15 |
| JPS5947654U (en) | 1984-03-29 |
| ZA773538B (en) | 1979-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |