IL303645A - אלמנט פולט אור, מודול גילוי אופטי, שיטת ייצור לאלמנט פולט אור ומיקרוסקופ אלקטרונים סורק - Google Patents

אלמנט פולט אור, מודול גילוי אופטי, שיטת ייצור לאלמנט פולט אור ומיקרוסקופ אלקטרונים סורק

Info

Publication number
IL303645A
IL303645A IL303645A IL30364523A IL303645A IL 303645 A IL303645 A IL 303645A IL 303645 A IL303645 A IL 303645A IL 30364523 A IL30364523 A IL 30364523A IL 303645 A IL303645 A IL 303645A
Authority
IL
Israel
Prior art keywords
light
layer
fiber optic
emitting element
optic plate
Prior art date
Application number
IL303645A
Other languages
English (en)
Inventor
Yamauchi Kuniyoshi
Kondo Minoru
Nakamura Takayuki
Maeda Junya
OKAWARA Satoru
Original Assignee
Hamamatsu Photonics Kk
Yamauchi Kuniyoshi
Kondo Minoru
Nakamura Takayuki
Maeda Junya
OKAWARA Satoru
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk, Yamauchi Kuniyoshi, Kondo Minoru, Nakamura Takayuki, Maeda Junya, OKAWARA Satoru filed Critical Hamamatsu Photonics Kk
Publication of IL303645A publication Critical patent/IL303645A/he

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/002—Scanning microscopes
    • G02B21/0024—Confocal scanning microscopes (CSOMs) or confocal "macroscopes"; Accessories which are not restricted to use with CSOMs, e.g. sample holders
    • G02B21/0052—Optical details of the image generation
    • G02B21/0076—Optical details of the image generation arrangements using fluorescence or luminescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/50—Detectors
    • G01N2223/507—Detectors secondary-emission detector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H10W90/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Immunology (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Organic Chemistry (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Led Device Packages (AREA)
IL303645A 2021-01-28 2021-11-25 אלמנט פולט אור, מודול גילוי אופטי, שיטת ייצור לאלמנט פולט אור ומיקרוסקופ אלקטרונים סורק IL303645A (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021011835A JP7548833B2 (ja) 2021-01-28 2021-01-28 発光素子、光検出モジュール、発光素子の製造方法、及び走査型電子顕微鏡
PCT/JP2021/043178 WO2022163101A1 (ja) 2021-01-28 2021-11-25 発光素子、光検出モジュール、発光素子の製造方法、及び走査型電子顕微鏡

Publications (1)

Publication Number Publication Date
IL303645A true IL303645A (he) 2023-08-01

Family

ID=82653106

Family Applications (1)

Application Number Title Priority Date Filing Date
IL303645A IL303645A (he) 2021-01-28 2021-11-25 אלמנט פולט אור, מודול גילוי אופטי, שיטת ייצור לאלמנט פולט אור ומיקרוסקופ אלקטרונים סורק

Country Status (7)

Country Link
US (1) US12495641B2 (he)
JP (1) JP7548833B2 (he)
KR (1) KR20230140552A (he)
CN (2) CN116472328B (he)
IL (1) IL303645A (he)
TW (1) TWI877437B (he)
WO (1) WO2022163101A1 (he)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766856B2 (ja) * 1986-01-24 1995-07-19 株式会社小松製作所 薄膜ｅｌ素子
BE1007781A3 (nl) * 1993-11-25 1995-10-17 Philips Electronics Nv Werkwijze voor het met elkaar verbinden van twee optische oppervlakken, aldus gevormd optisch samenstel en deeltjes-optisch toestel met zo'n samenstel.
JP4083874B2 (ja) 1998-06-18 2008-04-30 浜松ホトニクス株式会社 シンチレータファイバプレート及び放射線イメージセンサ
US6455860B1 (en) 1999-09-30 2002-09-24 Gatan, Inc. Resolution enhancement device for an optically-coupled image sensor using high extra-mural absorbent fiber
JP4246995B2 (ja) 2001-01-31 2009-04-02 浜松ホトニクス株式会社 電子線検出器、走査型電子顕微鏡、質量分析装置、及び、イオン検出器
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
JP4365255B2 (ja) 2004-04-08 2009-11-18 浜松ホトニクス株式会社 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
JP2009295753A (ja) 2008-06-04 2009-12-17 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US20110024775A1 (en) * 2009-07-31 2011-02-03 Goldeneye, Inc. Methods for and devices made using multiple stage growths
KR102188495B1 (ko) 2014-01-21 2020-12-08 삼성전자주식회사 반도체 발광소자의 제조 방법
JP6519195B2 (ja) 2015-01-23 2019-05-29 コニカミノルタ株式会社 シンチレータパネル及び放射線検出器
JP6576257B2 (ja) 2016-01-29 2019-09-18 株式会社日立ハイテクノロジーズ 荷電粒子検出器、及び荷電粒子線装置
IL260956B (he) 2018-08-02 2022-01-01 Applied Materials Israel Ltd חיישן לגילוי אלקטרונים
JP6695461B1 (ja) 2019-02-20 2020-05-20 浜松ホトニクス株式会社 蛍光体パネルの製造方法、蛍光体パネル、イメージインテンシファイア、及び走査型電子顕微鏡

Also Published As

Publication number Publication date
US20240063328A1 (en) 2024-02-22
CN116472328A (zh) 2023-07-21
JP7548833B2 (ja) 2024-09-10
CN116472328B (zh) 2025-03-04
TWI877437B (zh) 2025-03-21
KR20230140552A (ko) 2023-10-06
CN119993812A (zh) 2025-05-13
TW202246463A (zh) 2022-12-01
WO2022163101A1 (ja) 2022-08-04
JP2022115300A (ja) 2022-08-09
US12495641B2 (en) 2025-12-09

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