IL254455B - תא זיכרון sram לא נדיף ומכשיר אחסון מוליך למחצה לא נדיף - Google Patents

תא זיכרון sram לא נדיף ומכשיר אחסון מוליך למחצה לא נדיף

Info

Publication number
IL254455B
IL254455B IL25445517A IL25445517A IL254455B IL 254455 B IL254455 B IL 254455B IL 25445517 A IL25445517 A IL 25445517A IL 25445517 A IL25445517 A IL 25445517A IL 254455 B IL254455 B IL 254455B
Authority
IL
Israel
Prior art keywords
volatile
storage device
memory cell
semiconductor storage
sram memory
Prior art date
Application number
IL25445517A
Other languages
English (en)
Other versions
IL254455A0 (he
Inventor
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Tatsuro Toya
Kosuke Okuyama
Original Assignee
Floadia Corp
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Tatsuro Toya
Kosuke Okuyama
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp, Yutaka Shinagawa, Yasuhiro Taniguchi, Hideo Kasai, Ryotaro Sakurai, Yasuhiko Kawashima, Tatsuro Toya, Kosuke Okuyama filed Critical Floadia Corp
Publication of IL254455A0 publication Critical patent/IL254455A0/he
Publication of IL254455B publication Critical patent/IL254455B/he

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
IL25445517A 2015-03-27 2017-09-12 תא זיכרון sram לא נדיף ומכשיר אחסון מוליך למחצה לא נדיף IL254455B (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015065956A JP5993479B1 (ja) 2015-03-27 2015-03-27 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
PCT/JP2016/058843 WO2016158529A1 (ja) 2015-03-27 2016-03-18 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
IL254455A0 IL254455A0 (he) 2017-11-30
IL254455B true IL254455B (he) 2019-11-28

Family

ID=56921072

Family Applications (1)

Application Number Title Priority Date Filing Date
IL25445517A IL254455B (he) 2015-03-27 2017-09-12 תא זיכרון sram לא נדיף ומכשיר אחסון מוליך למחצה לא נדיף

Country Status (9)

Country Link
US (1) US10074658B2 (he)
EP (1) EP3276654A4 (he)
JP (1) JP5993479B1 (he)
KR (1) KR102512901B1 (he)
CN (1) CN107484434B (he)
IL (1) IL254455B (he)
SG (1) SG11201707354XA (he)
TW (2) TWI607529B (he)
WO (1) WO2016158529A1 (he)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10276581B1 (en) * 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit chip and manufacturing method thereof
JP6368848B1 (ja) * 2017-12-27 2018-08-01 株式会社フローディア 不揮発性ｓｒａｍメモリセル及び不揮発性半導体記憶装置
JP7074583B2 (ja) * 2018-06-26 2022-05-24 キオクシア株式会社 半導体記憶装置
CN115129235B (zh) * 2021-03-29 2025-10-21 长鑫存储技术有限公司 数据传输电路、方法及存储装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488579A (en) * 1994-04-29 1996-01-30 Motorola Inc. Three-dimensionally integrated nonvolatile SRAM cell and process
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
JP2005142354A (ja) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその駆動方法及びその製造方法
KR100580292B1 (ko) * 2003-12-31 2006-05-15 동부일렉트로닉스 주식회사 비 휘발성 메모리 장치
US7164608B2 (en) * 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells
JP2010278314A (ja) * 2009-05-29 2010-12-09 Renesas Electronics Corp 半導体装置およびその製造方法
JP2011129816A (ja) * 2009-12-21 2011-06-30 Renesas Electronics Corp 半導体装置
KR101979299B1 (ko) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법

Also Published As

Publication number Publication date
TW201707148A (zh) 2017-02-16
KR102512901B1 (ko) 2023-03-23
CN107484434A (zh) 2017-12-15
US20180083014A1 (en) 2018-03-22
SG11201707354XA (en) 2017-10-30
IL254455A0 (he) 2017-11-30
KR20170131843A (ko) 2017-11-30
TWI607529B (zh) 2017-12-01
EP3276654A1 (en) 2018-01-31
WO2016158529A1 (ja) 2016-10-06
CN107484434B (zh) 2019-04-12
TWI615923B (zh) 2018-02-21
JP2016186970A (ja) 2016-10-27
JP5993479B1 (ja) 2016-09-14
TW201803032A (zh) 2018-01-16
US10074658B2 (en) 2018-09-11
EP3276654A4 (en) 2019-04-10

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