IL245472A0 - Metrologically optimized test - Google Patents

Metrologically optimized test

Info

Publication number
IL245472A0
IL245472A0 IL245472A IL24547216A IL245472A0 IL 245472 A0 IL245472 A0 IL 245472A0 IL 245472 A IL245472 A IL 245472A IL 24547216 A IL24547216 A IL 24547216A IL 245472 A0 IL245472 A0 IL 245472A0
Authority
IL
Israel
Prior art keywords
metrology
optimized inspection
optimized
inspection
metrology optimized
Prior art date
Application number
IL245472A
Other languages
English (en)
Hebrew (he)
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of IL245472A0 publication Critical patent/IL245472A0/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/105—Purely optical scan
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/11—Monitoring and controlling the scan
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/125—Digital circuitry

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
IL245472A 2013-11-06 2016-05-04 Metrologically optimized test IL245472A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361900869P 2013-11-06 2013-11-06
US14/517,751 US9518932B2 (en) 2013-11-06 2014-10-17 Metrology optimized inspection
PCT/US2014/064103 WO2015069751A1 (en) 2013-11-06 2014-11-05 Metrology optimized inspection

Publications (1)

Publication Number Publication Date
IL245472A0 true IL245472A0 (en) 2016-06-30

Family

ID=53006822

Family Applications (1)

Application Number Title Priority Date Filing Date
IL245472A IL245472A0 (en) 2013-11-06 2016-05-04 Metrologically optimized test

Country Status (7)

Country Link
US (1) US9518932B2 (enExample)
JP (1) JP6545164B2 (enExample)
KR (1) KR102177677B1 (enExample)
CN (1) CN105793970B (enExample)
IL (1) IL245472A0 (enExample)
TW (1) TWI625806B (enExample)
WO (1) WO2015069751A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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CN109283800B (zh) * 2014-02-12 2021-01-01 Asml荷兰有限公司 过程窗口的优化方法
US10181185B2 (en) 2016-01-11 2019-01-15 Kla-Tencor Corp. Image based specimen process control
US10127651B2 (en) * 2016-01-15 2018-11-13 Kla-Tencor Corporation Defect sensitivity of semiconductor wafer inspectors using design data with wafer image data
TWI752100B (zh) * 2016-10-17 2022-01-11 美商克萊譚克公司 用於訓練檢查相關演算法之系統、非暫時性電腦可讀媒體及電腦實施方法
US10699926B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corp. Identifying nuisances and defects of interest in defects detected on a wafer
US10408764B2 (en) 2017-09-13 2019-09-10 Applied Materials Israel Ltd. System, method and computer program product for object examination
US11056366B2 (en) 2018-03-23 2021-07-06 Kla Corporation Sample transport device with integrated metrology
IL281060B2 (en) 2018-08-28 2023-11-01 Asml Netherlands Bv Methods and systems of optimal meteorological guidance
US11263737B2 (en) * 2019-01-10 2022-03-01 Lam Research Corporation Defect classification and source analysis for semiconductor equipment
CN114144867B (zh) * 2019-07-05 2025-05-02 科磊股份有限公司 使用量子计算的具有动态采样计划、优化晶片测量路径及优化晶片运输的制造厂管理
US11415531B2 (en) * 2019-10-11 2022-08-16 KLA Corp. Statistical learning-based mode selection for multi-mode inspection
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection

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JPH07270119A (ja) * 1994-03-21 1995-10-20 Nikon Corp 集積回路リソグラフィー用の蛍光使用の直接レチクル対ウエハ・アライメントの方法及び装置
US5789124A (en) * 1996-10-10 1998-08-04 International Business Machines Corporation Method of monitoring lithographic resist poisoning
US7057741B1 (en) 1999-06-18 2006-06-06 Kla-Tencor Corporation Reduced coherence symmetric grazing incidence differential interferometer
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6484064B1 (en) * 1999-10-05 2002-11-19 Advanced Micro Devices, Inc. Method and apparatus for running metrology standard wafer routes for cross-fab metrology calibration
US6552337B1 (en) * 1999-11-02 2003-04-22 Samsung Electronics Co., Ltd. Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements
US6630996B2 (en) * 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6620563B2 (en) * 2001-03-08 2003-09-16 Motorola, Inc. Lithography method for forming semiconductor devices on a wafer utilizing atomic force microscopy
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US6781688B2 (en) * 2002-10-02 2004-08-24 Kla-Tencor Technologies Corporation Process for identifying defects in a substrate having non-uniform surface properties
US7046375B2 (en) * 2003-05-02 2006-05-16 Timbre Technologies, Inc. Edge roughness measurement in optical metrology
US9002497B2 (en) 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
US7001830B2 (en) * 2003-09-02 2006-02-21 Advanced Micro Devices, Inc System and method of pattern recognition and metrology structure for an X-initiative layout design
JP4230899B2 (ja) * 2003-12-15 2009-02-25 株式会社日立ハイテクノロジーズ 回路パターン検査方法
KR101056142B1 (ko) 2004-01-29 2011-08-10 케이엘에이-텐코 코포레이션 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법
US7321426B1 (en) * 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7502121B1 (en) * 2004-11-24 2009-03-10 Ahbee 1, L.P. Temperature insensitive low coherence based optical metrology for nondestructive characterization of physical characteristics of materials
US7853920B2 (en) * 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
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EP2003680B1 (en) * 2006-02-21 2013-05-29 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
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US7801635B2 (en) * 2007-01-30 2010-09-21 Tokyo Electron Limited Real-time parameter tuning for etch processes
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Also Published As

Publication number Publication date
CN105793970A (zh) 2016-07-20
TWI625806B (zh) 2018-06-01
KR102177677B1 (ko) 2020-11-11
TW201528397A (zh) 2015-07-16
US9518932B2 (en) 2016-12-13
KR20160084423A (ko) 2016-07-13
US20150124247A1 (en) 2015-05-07
CN105793970B (zh) 2018-03-09
JP6545164B2 (ja) 2019-07-17
WO2015069751A1 (en) 2015-05-14
JP2017502499A (ja) 2017-01-19

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