CN105793970B - 计量优化检验 - Google Patents
计量优化检验 Download PDFInfo
- Publication number
- CN105793970B CN105793970B CN201480065989.2A CN201480065989A CN105793970B CN 105793970 B CN105793970 B CN 105793970B CN 201480065989 A CN201480065989 A CN 201480065989A CN 105793970 B CN105793970 B CN 105793970B
- Authority
- CN
- China
- Prior art keywords
- chip
- parameters
- wafer inspection
- inspection
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/10—Scanning
- G01N2201/105—Purely optical scan
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/10—Scanning
- G01N2201/11—Monitoring and controlling the scan
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
- G01N2201/125—Digital circuitry
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361900869P | 2013-11-06 | 2013-11-06 | |
| US61/900,869 | 2013-11-06 | ||
| US14/517,751 | 2014-10-17 | ||
| US14/517,751 US9518932B2 (en) | 2013-11-06 | 2014-10-17 | Metrology optimized inspection |
| PCT/US2014/064103 WO2015069751A1 (en) | 2013-11-06 | 2014-11-05 | Metrology optimized inspection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105793970A CN105793970A (zh) | 2016-07-20 |
| CN105793970B true CN105793970B (zh) | 2018-03-09 |
Family
ID=53006822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480065989.2A Active CN105793970B (zh) | 2013-11-06 | 2014-11-05 | 计量优化检验 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9518932B2 (enExample) |
| JP (1) | JP6545164B2 (enExample) |
| KR (1) | KR102177677B1 (enExample) |
| CN (1) | CN105793970B (enExample) |
| IL (1) | IL245472A0 (enExample) |
| TW (1) | TWI625806B (enExample) |
| WO (1) | WO2015069751A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015120996A1 (en) * | 2014-02-12 | 2015-08-20 | Asml Netherlands B.V. | Method of optimizing a process window |
| US10181185B2 (en) | 2016-01-11 | 2019-01-15 | Kla-Tencor Corp. | Image based specimen process control |
| US10127651B2 (en) * | 2016-01-15 | 2018-11-13 | Kla-Tencor Corporation | Defect sensitivity of semiconductor wafer inspectors using design data with wafer image data |
| KR102293789B1 (ko) * | 2016-10-17 | 2021-08-24 | 케이엘에이 코포레이션 | 검사 관련 알고리즘을 설정하는데 사용되는 트레이닝 세트의 최적화 |
| US10699926B2 (en) * | 2017-08-30 | 2020-06-30 | Kla-Tencor Corp. | Identifying nuisances and defects of interest in defects detected on a wafer |
| US10408764B2 (en) | 2017-09-13 | 2019-09-10 | Applied Materials Israel Ltd. | System, method and computer program product for object examination |
| US11056366B2 (en) | 2018-03-23 | 2021-07-06 | Kla Corporation | Sample transport device with integrated metrology |
| WO2020043525A1 (en) | 2018-08-28 | 2020-03-05 | Asml Netherlands B.V. | Systems and methods of optimal metrology guidance |
| US11263737B2 (en) * | 2019-01-10 | 2022-03-01 | Lam Research Corporation | Defect classification and source analysis for semiconductor equipment |
| IL289545B1 (en) * | 2019-07-05 | 2025-09-01 | Kla Tencor Corp | Production management with dynamic sampling plans, optimized part measurement routes, and optimized part transfer, using quantum computing |
| US11415531B2 (en) * | 2019-10-11 | 2022-08-16 | KLA Corp. | Statistical learning-based mode selection for multi-mode inspection |
| US11610296B2 (en) * | 2020-01-09 | 2023-03-21 | Kla Corporation | Projection and distance segmentation algorithm for wafer defect detection |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672012A (zh) * | 2002-07-25 | 2005-09-21 | 音质技术公司 | 光计量术中模型和参数的选择 |
| JP2009210504A (ja) * | 2008-03-06 | 2009-09-17 | Olympus Corp | 基板検査方法 |
| CN102027418A (zh) * | 2008-05-15 | 2011-04-20 | 意法半导体(鲁塞)有限公司 | 通过opc模型空间中的局部化监视结构进行集成电路制造的实时监视的方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2057675B (en) * | 1979-07-20 | 1983-11-16 | Hitachi Ltd | Photoelectric detection of surface defects |
| JPH07270119A (ja) * | 1994-03-21 | 1995-10-20 | Nikon Corp | 集積回路リソグラフィー用の蛍光使用の直接レチクル対ウエハ・アライメントの方法及び装置 |
| US5789124A (en) * | 1996-10-10 | 1998-08-04 | International Business Machines Corporation | Method of monitoring lithographic resist poisoning |
| US7057741B1 (en) | 1999-06-18 | 2006-06-06 | Kla-Tencor Corporation | Reduced coherence symmetric grazing incidence differential interferometer |
| IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
| US6484064B1 (en) * | 1999-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Method and apparatus for running metrology standard wafer routes for cross-fab metrology calibration |
| US6552337B1 (en) * | 1999-11-02 | 2003-04-22 | Samsung Electronics Co., Ltd. | Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements |
| US6630996B2 (en) * | 2000-11-15 | 2003-10-07 | Real Time Metrology, Inc. | Optical method and apparatus for inspecting large area planar objects |
| US6620563B2 (en) * | 2001-03-08 | 2003-09-16 | Motorola, Inc. | Lithography method for forming semiconductor devices on a wafer utilizing atomic force microscopy |
| US6960416B2 (en) * | 2002-03-01 | 2005-11-01 | Applied Materials, Inc. | Method and apparatus for controlling etch processes during fabrication of semiconductor devices |
| US6982793B1 (en) * | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
| US6781688B2 (en) * | 2002-10-02 | 2004-08-24 | Kla-Tencor Technologies Corporation | Process for identifying defects in a substrate having non-uniform surface properties |
| US7046375B2 (en) * | 2003-05-02 | 2006-05-16 | Timbre Technologies, Inc. | Edge roughness measurement in optical metrology |
| US9002497B2 (en) * | 2003-07-03 | 2015-04-07 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of wafers and reticles using designer intent data |
| US7001830B2 (en) * | 2003-09-02 | 2006-02-21 | Advanced Micro Devices, Inc | System and method of pattern recognition and metrology structure for an X-initiative layout design |
| JP4230899B2 (ja) * | 2003-12-15 | 2009-02-25 | 株式会社日立ハイテクノロジーズ | 回路パターン検査方法 |
| CN1910516B (zh) | 2004-01-29 | 2011-01-12 | 克拉-坦科技术股份有限公司 | 用于检测标线设计数据中的缺陷的计算机实现方法 |
| US7321426B1 (en) * | 2004-06-02 | 2008-01-22 | Kla-Tencor Technologies Corporation | Optical metrology on patterned samples |
| US7502121B1 (en) * | 2004-11-24 | 2009-03-10 | Ahbee 1, L.P. | Temperature insensitive low coherence based optical metrology for nondestructive characterization of physical characteristics of materials |
| US7853920B2 (en) * | 2005-06-03 | 2010-12-14 | Asml Netherlands B.V. | Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing |
| WO2007026361A2 (en) | 2005-09-01 | 2007-03-08 | Camtek Limited | A method and a system for establishing an inspection recipe |
| JP5115859B2 (ja) * | 2006-02-21 | 2013-01-09 | 株式会社ニコン | パターン形成装置、露光装置及び露光方法、並びにデバイス製造方法 |
| US7526354B2 (en) * | 2006-07-10 | 2009-04-28 | Tokyo Electron Limited | Managing and using metrology data for process and equipment control |
| US8045786B2 (en) | 2006-10-24 | 2011-10-25 | Kla-Tencor Technologies Corp. | Waferless recipe optimization |
| US7801635B2 (en) * | 2007-01-30 | 2010-09-21 | Tokyo Electron Limited | Real-time parameter tuning for etch processes |
| US7711514B2 (en) | 2007-08-10 | 2010-05-04 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan |
| US8269960B2 (en) | 2008-07-24 | 2012-09-18 | Kla-Tencor Corp. | Computer-implemented methods for inspecting and/or classifying a wafer |
| US8379227B2 (en) * | 2009-10-28 | 2013-02-19 | Nanometrics Incorporated | Optical metrology on textured samples |
| US8559001B2 (en) | 2010-01-11 | 2013-10-15 | Kla-Tencor Corporation | Inspection guided overlay metrology |
| JP2011192769A (ja) * | 2010-03-15 | 2011-09-29 | Renesas Electronics Corp | 半導体デバイス製造方法、及び製造システム |
| US9588441B2 (en) | 2012-05-18 | 2017-03-07 | Kla-Tencor Corporation | Method and device for using substrate geometry to determine optimum substrate analysis sampling |
-
2014
- 2014-10-17 US US14/517,751 patent/US9518932B2/en active Active
- 2014-11-05 WO PCT/US2014/064103 patent/WO2015069751A1/en not_active Ceased
- 2014-11-05 JP JP2016528082A patent/JP6545164B2/ja active Active
- 2014-11-05 CN CN201480065989.2A patent/CN105793970B/zh active Active
- 2014-11-05 KR KR1020167014947A patent/KR102177677B1/ko active Active
- 2014-11-06 TW TW103138582A patent/TWI625806B/zh active
-
2016
- 2016-05-04 IL IL245472A patent/IL245472A0/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672012A (zh) * | 2002-07-25 | 2005-09-21 | 音质技术公司 | 光计量术中模型和参数的选择 |
| JP2009210504A (ja) * | 2008-03-06 | 2009-09-17 | Olympus Corp | 基板検査方法 |
| CN102027418A (zh) * | 2008-05-15 | 2011-04-20 | 意法半导体(鲁塞)有限公司 | 通过opc模型空间中的局部化监视结构进行集成电路制造的实时监视的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105793970A (zh) | 2016-07-20 |
| US9518932B2 (en) | 2016-12-13 |
| KR102177677B1 (ko) | 2020-11-11 |
| US20150124247A1 (en) | 2015-05-07 |
| TW201528397A (zh) | 2015-07-16 |
| IL245472A0 (en) | 2016-06-30 |
| KR20160084423A (ko) | 2016-07-13 |
| JP2017502499A (ja) | 2017-01-19 |
| JP6545164B2 (ja) | 2019-07-17 |
| TWI625806B (zh) | 2018-06-01 |
| WO2015069751A1 (en) | 2015-05-14 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |