IL210395A0 - Methods and apparatus for interfacing between a flash memory controller and a flash memory array - Google Patents
Methods and apparatus for interfacing between a flash memory controller and a flash memory arrayInfo
- Publication number
- IL210395A0 IL210395A0 IL210395A IL21039510A IL210395A0 IL 210395 A0 IL210395 A0 IL 210395A0 IL 210395 A IL210395 A IL 210395A IL 21039510 A IL21039510 A IL 21039510A IL 210395 A0 IL210395 A0 IL 210395A0
- Authority
- IL
- Israel
- Prior art keywords
- flash memory
- interfacing
- methods
- memory controller
- memory array
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13367508P | 2008-07-01 | 2008-07-01 | |
| US13392108P | 2008-07-07 | 2008-07-07 | |
| US13468808P | 2008-07-10 | 2008-07-10 | |
| PCT/US2009/049328 WO2010002943A1 (en) | 2008-07-01 | 2009-06-30 | Methods and apparatus for interfacing between a flash memory controller and a flash memory array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL210395A0 true IL210395A0 (en) | 2011-03-31 |
Family
ID=40996674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL210395A IL210395A0 (en) | 2008-07-01 | 2010-12-30 | Methods and apparatus for interfacing between a flash memory controller and a flash memory array |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8677056B2 (enExample) |
| EP (1) | EP2308054B1 (enExample) |
| JP (1) | JP5562329B2 (enExample) |
| KR (1) | KR101618677B1 (enExample) |
| CN (1) | CN102132349B (enExample) |
| IL (1) | IL210395A0 (enExample) |
| TW (1) | TWI470641B (enExample) |
| WO (1) | WO2010002943A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8429500B2 (en) | 2010-03-31 | 2013-04-23 | Lsi Corporation | Methods and apparatus for computing a probability value of a received value in communication or storage systems |
| US8775913B2 (en) | 2010-03-31 | 2014-07-08 | Lsi Corporation | Methods and apparatus for computing soft data or log likelihood ratios for received values in communication or storage systems |
| US8504885B2 (en) | 2010-03-31 | 2013-08-06 | Lsi Corporation | Methods and apparatus for approximating a probability density function or distribution for a received value in communication or storage systems |
| US9030870B2 (en) * | 2011-08-26 | 2015-05-12 | Micron Technology, Inc. | Threshold voltage compensation in a multilevel memory |
| CA2885414C (en) | 2012-10-09 | 2018-05-01 | Sanbio, Inc. | Methods and compositions for treatment of retinal degeneration |
| US11249652B1 (en) | 2013-01-28 | 2022-02-15 | Radian Memory Systems, Inc. | Maintenance of nonvolatile memory on host selected namespaces by a common memory controller |
| US9652376B2 (en) | 2013-01-28 | 2017-05-16 | Radian Memory Systems, Inc. | Cooperative flash memory control |
| US10445229B1 (en) | 2013-01-28 | 2019-10-15 | Radian Memory Systems, Inc. | Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies |
| TWI560549B (en) * | 2013-02-07 | 2016-12-01 | Winbond Electronics Corp | Access system |
| US9798613B2 (en) | 2013-12-27 | 2017-10-24 | Toshiba Memory Corporation | Controller of nonvolatile semiconductor memory |
| KR102211709B1 (ko) | 2014-05-19 | 2021-02-02 | 삼성전자주식회사 | 신호 송수신 특성을 향상한 불휘발성 메모리 시스템, 호스트 장치, 불휘발성 메모리 시스템 및 호스트의 동작방법 |
| KR102251809B1 (ko) | 2014-05-28 | 2021-05-13 | 삼성전자주식회사 | 메모리 시스템, 메모리 인터페이스 장치 및 메모리 시스템에서의 인터페이싱 방법 |
| US9542118B1 (en) | 2014-09-09 | 2017-01-10 | Radian Memory Systems, Inc. | Expositive flash memory control |
| US10552085B1 (en) | 2014-09-09 | 2020-02-04 | Radian Memory Systems, Inc. | Techniques for directed data migration |
| US10552058B1 (en) | 2015-07-17 | 2020-02-04 | Radian Memory Systems, Inc. | Techniques for delegating data processing to a cooperative memory controller |
| KR102530789B1 (ko) * | 2018-07-11 | 2023-05-11 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| KR102733317B1 (ko) * | 2019-04-15 | 2024-11-25 | 에스케이하이닉스 주식회사 | 간섭 보상을 위한 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US11175984B1 (en) | 2019-12-09 | 2021-11-16 | Radian Memory Systems, Inc. | Erasure coding techniques for flash memory |
| US11586385B1 (en) | 2020-05-06 | 2023-02-21 | Radian Memory Systems, Inc. | Techniques for managing writes in nonvolatile memory |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03142800A (ja) * | 1989-10-27 | 1991-06-18 | Nec Corp | 電気的消去・書き込み可能なプログラマブル・リード・オンリー・メモリ |
| US5737748A (en) * | 1995-03-15 | 1998-04-07 | Texas Instruments Incorporated | Microprocessor unit having a first level write-through cache memory and a smaller second-level write-back cache memory |
| JPH11149786A (ja) * | 1997-11-18 | 1999-06-02 | Matsushita Electric Ind Co Ltd | 不揮発性半導体メモリ |
| US6317842B1 (en) * | 1999-02-16 | 2001-11-13 | Qlogic Corporation | Method and circuit for receiving dual edge clocked data |
| US6467044B1 (en) * | 1999-10-20 | 2002-10-15 | International Business Machines Corporation | On-board clock-control templates for testing integrated circuits |
| JP2002007200A (ja) * | 2000-06-16 | 2002-01-11 | Nec Corp | メモリ制御装置及び動作切替方法並びにインターフェース装置、半導体集積チップ、記録媒体 |
| JP2002093175A (ja) * | 2000-09-08 | 2002-03-29 | Toshiba Microelectronics Corp | 半導体メモリ装置 |
| JP4398962B2 (ja) * | 2001-02-20 | 2010-01-13 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法 |
| JP3875570B2 (ja) * | 2001-02-20 | 2007-01-31 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 |
| JP2002251886A (ja) * | 2001-02-22 | 2002-09-06 | Seiko Instruments Inc | シリアル入出力メモリ |
| JP2002334588A (ja) * | 2001-05-11 | 2002-11-22 | Seiko Epson Corp | 不揮発性半導体記憶装置のプログラム方法 |
| US6625081B2 (en) * | 2001-08-13 | 2003-09-23 | Micron Technology, Inc. | Synchronous flash memory with virtual segment architecture |
| JP4005000B2 (ja) * | 2003-07-04 | 2007-11-07 | 株式会社東芝 | 半導体記憶装置及びデータ書き込み方法。 |
| US7752380B2 (en) * | 2003-07-31 | 2010-07-06 | Sandisk Il Ltd | SDRAM memory device with an embedded NAND flash controller |
| JP5156932B2 (ja) * | 2004-03-31 | 2013-03-06 | ラウンド ロック リサーチ、エルエルシー | 集積回路における信号タイミングの再構成 |
| JP4410188B2 (ja) * | 2004-11-12 | 2010-02-03 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法 |
| KR101293365B1 (ko) * | 2005-09-30 | 2013-08-05 | 모사이드 테크놀로지스 인코퍼레이티드 | 출력 제어 메모리 |
| KR101016432B1 (ko) * | 2005-11-10 | 2011-02-21 | 샌디스크 코포레이션 | 타이밍 정보를 이용한 리버스 커플링 효과 |
| JP2007157234A (ja) * | 2005-12-05 | 2007-06-21 | Matsushita Electric Ind Co Ltd | メモリシステム |
| KR100673026B1 (ko) * | 2006-01-24 | 2007-01-24 | 삼성전자주식회사 | 고온 스트레스로 인한 읽기 마진의 감소를 보상할 수 있는플래시 메모리의 프로그램 방법 |
| JP4157563B2 (ja) * | 2006-01-31 | 2008-10-01 | 株式会社東芝 | 半導体集積回路装置 |
| JP4157562B2 (ja) * | 2006-01-31 | 2008-10-01 | 株式会社東芝 | 半導体集積回路装置 |
| US7400532B2 (en) | 2006-02-16 | 2008-07-15 | Micron Technology, Inc. | Programming method to reduce gate coupling interference for non-volatile memory |
| JP2007226853A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | マルチチップパッケージ |
| WO2007127678A2 (en) | 2006-04-24 | 2007-11-08 | Sandisk Corporation | High-performance flash memory data transfer |
| WO2007132456A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Memory device with adaptive capacity |
| JP5095131B2 (ja) | 2006-05-31 | 2012-12-12 | 株式会社東芝 | 半導体記憶装置 |
| JP4976764B2 (ja) * | 2006-07-05 | 2012-07-18 | 株式会社東芝 | 半導体記憶装置 |
| ATE472803T1 (de) * | 2006-07-20 | 2010-07-15 | Sandisk Corp | Floating-gate-speicher mit kopplungskompensation während der programmierung |
| US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
| WO2008019347A2 (en) * | 2006-08-05 | 2008-02-14 | Benhov Gmbh, Llc | Solid state storage element and method |
| JP4784466B2 (ja) * | 2006-10-04 | 2011-10-05 | 三菱電機株式会社 | 映像情報再生方法 |
| US8984249B2 (en) * | 2006-12-20 | 2015-03-17 | Novachips Canada Inc. | ID generation apparatus and method for serially interconnected devices |
-
2009
- 2009-06-30 JP JP2011516837A patent/JP5562329B2/ja not_active Expired - Fee Related
- 2009-06-30 KR KR1020117002516A patent/KR101618677B1/ko not_active Expired - Fee Related
- 2009-06-30 CN CN200980132504.6A patent/CN102132349B/zh not_active Expired - Fee Related
- 2009-06-30 WO PCT/US2009/049328 patent/WO2010002943A1/en not_active Ceased
- 2009-06-30 US US13/001,300 patent/US8677056B2/en active Active
- 2009-06-30 EP EP09774393.4A patent/EP2308054B1/en not_active Not-in-force
- 2009-07-01 TW TW98122265A patent/TWI470641B/zh not_active IP Right Cessation
-
2010
- 2010-12-30 IL IL210395A patent/IL210395A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102132349A (zh) | 2011-07-20 |
| EP2308054B1 (en) | 2016-04-13 |
| WO2010002943A1 (en) | 2010-01-07 |
| JP2011528154A (ja) | 2011-11-10 |
| TWI470641B (zh) | 2015-01-21 |
| KR20110039310A (ko) | 2011-04-15 |
| CN102132349B (zh) | 2015-06-17 |
| KR101618677B1 (ko) | 2016-05-09 |
| JP5562329B2 (ja) | 2014-07-30 |
| US8677056B2 (en) | 2014-03-18 |
| TW201007766A (en) | 2010-02-16 |
| EP2308054A1 (en) | 2011-04-13 |
| US20110138114A1 (en) | 2011-06-09 |
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