IL162478A0 - Phase shifted surface emitting dfb laser structures with gain or absorptive gratings - Google Patents

Phase shifted surface emitting dfb laser structures with gain or absorptive gratings

Info

Publication number
IL162478A0
IL162478A0 IL16247802A IL16247802A IL162478A0 IL 162478 A0 IL162478 A0 IL 162478A0 IL 16247802 A IL16247802 A IL 16247802A IL 16247802 A IL16247802 A IL 16247802A IL 162478 A0 IL162478 A0 IL 162478A0
Authority
IL
Israel
Prior art keywords
gain element
length
surface emitting
elements
grating
Prior art date
Application number
IL16247802A
Other languages
English (en)
Original Assignee
Photonami Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA002364817A external-priority patent/CA2364817A1/en
Application filed by Photonami Inc filed Critical Photonami Inc
Publication of IL162478A0 publication Critical patent/IL162478A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
IL16247802A 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings IL162478A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002364817A CA2364817A1 (en) 2001-11-16 2001-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
PCT/CA2002/001893 WO2003055019A1 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings

Publications (1)

Publication Number Publication Date
IL162478A0 true IL162478A0 (en) 2005-11-20

Family

ID=4170807

Family Applications (1)

Application Number Title Priority Date Filing Date
IL16247802A IL162478A0 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings

Country Status (12)

Country Link
US (1) US20030147439A1 (ko)
EP (1) EP1454393B1 (ko)
JP (1) JP2005513803A (ko)
KR (1) KR20040065264A (ko)
CN (1) CN1689204A (ko)
AT (1) ATE295623T1 (ko)
AU (1) AU2002351571A1 (ko)
DE (1) DE60204168T2 (ko)
IL (1) IL162478A0 (ko)
MX (1) MXPA04005726A (ko)
RU (1) RU2004121153A (ko)
WO (1) WO2003055019A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040190580A1 (en) * 2003-03-04 2004-09-30 Bardia Pezeshki High-yield high-precision distributed feedback laser based on an array
CN1823456A (zh) * 2003-06-10 2006-08-23 福托纳米公司 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备
US7649916B2 (en) * 2004-06-30 2010-01-19 Finisar Corporation Semiconductor laser with side mode suppression
US7313159B2 (en) * 2004-12-23 2007-12-25 Photodigm, Inc. Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating
KR100794653B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 분포궤환형 양자점 반도체 레이저 구조물
JP2007227560A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp 利得結合型分布帰還型半導体レーザ
GB2437784B (en) * 2006-05-02 2011-05-11 Jian-Jun He Q-modulated semiconductor laser with electro-absorptive grating structures
CN103636084B (zh) * 2011-07-04 2016-09-28 丹麦技术大学 激光器
EP2933885B1 (en) * 2014-04-16 2017-05-31 Alcatel Lucent Tunable emitting device with a directly modulated laser coupled to a ring resonator
US20210098970A1 (en) * 2019-10-01 2021-04-01 Ii-Vi Delaware, Inc. Isolator-free laser
CN112382858B (zh) * 2020-10-23 2022-03-15 西安理工大学 一种基于全介质材料的光可调四频带太赫兹超材料吸收器
CN112467516B (zh) * 2020-11-11 2021-10-08 华中科技大学 一种面发射oam光束的分布反馈激光器及其调制方法
US11876350B2 (en) 2020-11-13 2024-01-16 Ii-Vi Delaware, Inc. Multi-wavelength VCSEL array and method of fabrication
CN114866420B (zh) * 2022-04-28 2023-06-09 烽火通信科技股份有限公司 一种对波分传输系统进行优化的方法和装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692913B2 (ja) * 1987-12-19 1997-12-17 株式会社東芝 グレーティング結合型表面発光レーザ素子およびその変調方法
US5727013A (en) * 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5970081A (en) * 1996-09-17 1999-10-19 Kabushiki Kaisha Toshiba Grating coupled surface emitting device
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
JPH11307856A (ja) * 1998-04-21 1999-11-05 Toshiba Corp 分布帰還型レーザ及びその製造方法
JP3186705B2 (ja) * 1998-08-27 2001-07-11 日本電気株式会社 分布帰還型半導体レーザ
AU6628700A (en) * 1999-08-13 2001-03-13 Wisconsin Alumni Research Foundation Single mode, single lobe surface emitting distributed feedback semiconductor laser
WO2001093385A2 (en) * 2000-05-31 2001-12-06 Nova Crystals, Inc. Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors
CN1823456A (zh) * 2003-06-10 2006-08-23 福托纳米公司 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备

Also Published As

Publication number Publication date
RU2004121153A (ru) 2005-03-27
EP1454393A1 (en) 2004-09-08
ATE295623T1 (de) 2005-05-15
US20030147439A1 (en) 2003-08-07
WO2003055019A1 (en) 2003-07-03
DE60204168D1 (de) 2005-06-16
EP1454393B1 (en) 2005-05-11
CN1689204A (zh) 2005-10-26
KR20040065264A (ko) 2004-07-21
DE60204168T2 (de) 2006-01-19
JP2005513803A (ja) 2005-05-12
MXPA04005726A (es) 2005-07-01
AU2002351571A1 (en) 2003-07-09

Similar Documents

Publication Publication Date Title
IL162478A0 (en) Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
DE69908935D1 (de) Hochleistungshalbleiterlaser mit verteilter rückkopplung und schmaler spektraler emissionsbreite
JP2003513297A5 (ko)
WO2002025705A3 (en) Quantum dot devices
WO2003043143A3 (en) Tunable laser device for avoiding optical mode hops
KR20040098421A (ko) 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드
WO2008111344A1 (ja) 分布帰還型半導体レーザ素子
WO2003007441A3 (en) Monolithic piezoelectrically-tunable optoelectronic device
TW200505119A (en) Method and apparatus for suppression of spatial-hole burning in second or higher order DFB lasers
JPH0137872B2 (ko)
WO2003063305A3 (en) High coherent power, two-dimensional surface­emitting semiconductor diode array laser
DE60107581D1 (de) Vielfachsegmentierter integrierter laser und herstellungsverfahren
RU2540233C1 (ru) Инжекционный лазер с многоволновым модулированным излучением
JP2013168513A (ja) 半導体レーザおよび光半導体装置
JP2010199169A (ja) 半導体光素子
JPH0817262B2 (ja) 単一波長発振半導体レーザ装置
JPS62245692A (ja) 外部共振器付分布帰還型半導体レ−ザ
AU2003263262A1 (en) Dfb laser with a distributed reflector and photonic band gap
Helmers et al. 45nm tunability in C-band obtained with external cavity laser including sampled fibre Bragg grating
SE9804422D0 (sv) Method for wavelength compensation in semi conductor manufacturing
JP2010238890A (ja) 半導体パルスレーザ
GB9921445D0 (ko)
WO2003007028A3 (en) Phase shifted microcavities
JPH02263490A (ja) 波長可変半導体レーザ
CN117813736A (zh) 一种单片集成多段级联光频梳及其芯片