DE60107581D1 - Vielfachsegmentierter integrierter laser und herstellungsverfahren - Google Patents
Vielfachsegmentierter integrierter laser und herstellungsverfahrenInfo
- Publication number
- DE60107581D1 DE60107581D1 DE60107581T DE60107581T DE60107581D1 DE 60107581 D1 DE60107581 D1 DE 60107581D1 DE 60107581 T DE60107581 T DE 60107581T DE 60107581 T DE60107581 T DE 60107581T DE 60107581 D1 DE60107581 D1 DE 60107581D1
- Authority
- DE
- Germany
- Prior art keywords
- waveguide segments
- segments
- manufacturing
- integrated laser
- spaced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Laser Surgery Devices (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23045700P | 2000-09-06 | 2000-09-06 | |
US230457P | 2000-09-06 | ||
PCT/IL2001/000840 WO2002021650A2 (en) | 2000-09-06 | 2001-09-06 | A multisegment integrated laser and a method for fabrication thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60107581D1 true DE60107581D1 (de) | 2005-01-05 |
DE60107581T2 DE60107581T2 (de) | 2005-10-06 |
Family
ID=22865294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60107581T Expired - Fee Related DE60107581T2 (de) | 2000-09-06 | 2001-09-06 | Vielfachsegmentierter integrierter laser und herstellungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US6885689B2 (de) |
EP (1) | EP1316129B1 (de) |
AT (1) | ATE284084T1 (de) |
AU (1) | AU2001288026A1 (de) |
CA (1) | CA2421657A1 (de) |
DE (1) | DE60107581T2 (de) |
IL (1) | IL154662A0 (de) |
WO (1) | WO2002021650A2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60032858T2 (de) | 1999-11-17 | 2007-09-06 | Kabushiki Kaisha Shofu | Dentales Füllungsmaterial |
US20040037341A1 (en) * | 2002-08-21 | 2004-02-26 | Tan Michael R. | Laser utilizing a microdisk resonator |
IL152195A0 (en) | 2002-10-09 | 2003-05-29 | Lambda Crossing Ltd | Tunable laser |
JP2008522427A (ja) * | 2004-12-01 | 2008-06-26 | ビノプティクス・コーポレイション | 波長コンバータ/インバータ |
US8737446B2 (en) * | 2010-03-25 | 2014-05-27 | Sumitomo Electric Industries, Ltd. | Semiconductor laser |
EP2645496A1 (de) * | 2012-03-26 | 2013-10-02 | Alcatel Lucent | Abstimmbarer Wellenlängen-Halbleiterlaser |
US9354394B2 (en) * | 2012-05-11 | 2016-05-31 | Oracle International Corporation | Optical components having a common etch depth |
US20140321805A1 (en) * | 2013-04-15 | 2014-10-30 | Technion Research & Development Foundation Ltd. | Ultra-flat plasmonic optical horn antenna |
WO2018207422A1 (ja) * | 2017-05-08 | 2018-11-15 | ソニー株式会社 | レーザ装置組立体 |
CN108683078B (zh) * | 2018-06-21 | 2023-06-09 | 中国科学院福建物质结构研究所 | 一种波长可调谐的半导体激光器 |
JP2022546492A (ja) * | 2019-09-02 | 2022-11-04 | スマート フォトニクス ホールディングス ビー.ブイ. | モノリシックに集積されたInPの電気光学的に調整可能なリングレーザー、レーザーデバイス、及び対応する方法 |
CN112490850B (zh) * | 2020-12-09 | 2023-04-07 | 海南师范大学 | 蓝光隧道结纳米环光放大器外延结构及放大器的制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622671A (en) | 1983-02-25 | 1986-11-11 | At&T Bell Laboratories | Multicavity optical device |
JPS62287683A (ja) * | 1986-06-06 | 1987-12-14 | Nec Corp | 光分岐半導体レ−ザ |
JP2667255B2 (ja) * | 1989-07-24 | 1997-10-27 | 日立電線株式会社 | 希土類元素添加ガラス導波路増幅器 |
IL96186A (en) | 1989-11-20 | 1994-08-26 | Hughes Aircraft Co | Master oscillator power amplifier with interference isolated oscillator |
US5327448A (en) | 1992-03-30 | 1994-07-05 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and techniques for controlled optical confinement |
US5398256A (en) | 1993-05-10 | 1995-03-14 | The United States Of America As Represented By The United States Department Of Energy | Interferometric ring lasers and optical devices |
US5548607A (en) | 1994-06-08 | 1996-08-20 | Lucent Technologies, Inc. | Article comprising an integrated laser/modulator combination |
US5742633A (en) | 1996-10-02 | 1998-04-21 | Yale University | Asymmetric resonant optical cavity apparatus |
WO2001027692A1 (en) | 1999-10-14 | 2001-04-19 | Lambda Crossing Ltd. | An integrated optical device for data communication |
-
2001
- 2001-09-05 US US09/946,138 patent/US6885689B2/en not_active Expired - Fee Related
- 2001-09-06 EP EP01967658A patent/EP1316129B1/de not_active Expired - Lifetime
- 2001-09-06 AT AT01967658T patent/ATE284084T1/de not_active IP Right Cessation
- 2001-09-06 WO PCT/IL2001/000840 patent/WO2002021650A2/en active IP Right Grant
- 2001-09-06 CA CA002421657A patent/CA2421657A1/en not_active Abandoned
- 2001-09-06 IL IL15466201A patent/IL154662A0/xx active IP Right Grant
- 2001-09-06 AU AU2001288026A patent/AU2001288026A1/en not_active Abandoned
- 2001-09-06 DE DE60107581T patent/DE60107581T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1316129A2 (de) | 2003-06-04 |
ATE284084T1 (de) | 2004-12-15 |
CA2421657A1 (en) | 2002-03-14 |
IL154662A0 (en) | 2003-09-17 |
US20020037023A1 (en) | 2002-03-28 |
DE60107581T2 (de) | 2005-10-06 |
WO2002021650A3 (en) | 2002-08-15 |
US6885689B2 (en) | 2005-04-26 |
AU2001288026A1 (en) | 2002-03-22 |
WO2002021650A2 (en) | 2002-03-14 |
EP1316129B1 (de) | 2004-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60107581D1 (de) | Vielfachsegmentierter integrierter laser und herstellungsverfahren | |
WO2004027939A3 (en) | Traveling-wave lasers with a linear cavity | |
SE9900338D0 (sv) | Ytemitterande laser med vertikal kavitet | |
DE69825059D1 (de) | Linearer hochfrequenzleistungsverstärker mit optisch betätigten schaltern | |
MY132031A (en) | Semiconductor laser element | |
ATE471132T1 (de) | Stent mit verbesserter zellkonfiguration | |
DE69902421T2 (de) | Halbleiterlaser mit erhöhter Ausgangsleistung | |
DE60230032D1 (de) | Oberflächenmodifizierung | |
DE69002874D1 (de) | Laser-Dioden-gepumpter Leistungs-Laser. | |
ATE281011T1 (de) | Organische laser | |
GB2371405B (en) | Improvements in or relating to semiconductor lasers | |
DE69813655T2 (de) | Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren | |
CA2257518A1 (en) | Split-pumped dual stage optical fiber amplifier | |
DE58905454D1 (de) | Halbleiterlaseranordnung für hohe Ausgangsleistung im lateralen Grundmodus. | |
DE60134911D1 (de) | Halbleiterlaser mit verteilter Rückkopplung | |
ES2040718T3 (es) | Emisor laser con un laser semiconductor y un resonador externo. | |
DE50115572D1 (de) | Oberflächenemittierender laser mit seitlicher strominjektion | |
DE69834860D1 (de) | Oberflächenemittierender Halbleiterlaser mit ringförmigem Resonator | |
DE60204168D1 (de) | Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern | |
DE3888601D1 (de) | Halbleiterlaser mit konstanter differentieller Quantenausbeute oder konstanter optischer Ausgangsleistung. | |
DE69732052D1 (de) | Filamentierter oberflachenemittierender multiwellenlängenlaser mit vertikalem resonator und herstellungsverfahren | |
CA2366251A1 (en) | Multi-wavelength ring laser source | |
DE60203701D1 (de) | Halbleiterlaser mit einer vielzahl von optisch aktiven gebieten | |
SE9702629L (sv) | Begravd heterostrukturlaser med ströminneslutande skikt | |
ATE349791T1 (de) | Einmodiger hochleistungs-halbleiterlaser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |