IL161701A0 - High-purity aluminum sputter targets - Google Patents

High-purity aluminum sputter targets

Info

Publication number
IL161701A0
IL161701A0 IL16170102A IL16170102A IL161701A0 IL 161701 A0 IL161701 A0 IL 161701A0 IL 16170102 A IL16170102 A IL 16170102A IL 16170102 A IL16170102 A IL 16170102A IL 161701 A0 IL161701 A0 IL 161701A0
Authority
IL
Israel
Prior art keywords
purity aluminum
sputter targets
aluminum sputter
targets
purity
Prior art date
Application number
IL16170102A
Other languages
English (en)
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/054,345 external-priority patent/US20030098102A1/en
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of IL161701A0 publication Critical patent/IL161701A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/004—Heat treatment in fluid bed
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
IL16170102A 2001-11-13 2002-10-23 High-purity aluminum sputter targets IL161701A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/054,345 US20030098102A1 (en) 2001-11-13 2001-11-13 High-purity aluminum sputter targets and method of manufacture
US10/219,756 US6835251B2 (en) 2001-11-13 2002-08-16 High-purity aluminum sputter targets and method of manufacture
PCT/US2002/033680 WO2003042421A1 (en) 2001-11-13 2002-10-23 High-purity aluminum sputter targets

Publications (1)

Publication Number Publication Date
IL161701A0 true IL161701A0 (en) 2004-09-27

Family

ID=26732920

Family Applications (1)

Application Number Title Priority Date Filing Date
IL16170102A IL161701A0 (en) 2001-11-13 2002-10-23 High-purity aluminum sputter targets

Country Status (7)

Country Link
US (1) US7320736B2 (ja)
EP (1) EP1444376B1 (ja)
JP (1) JP4477875B2 (ja)
KR (1) KR100938537B1 (ja)
IL (1) IL161701A0 (ja)
TW (1) TWI263688B (ja)
WO (1) WO2003042421A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
TWI296286B (en) * 2005-12-20 2008-05-01 Chung Shan Inst Of Science Method of manufacturing al and al alloy sputtering target
KR20110106787A (ko) 2009-01-22 2011-09-29 토소우 에스엠디, 인크 모놀리식 알루미늄 합금 타겟 및 그 제조방법
CN102002653B (zh) * 2010-11-27 2012-07-04 东北大学 一种超高纯铝细晶、高取向靶材的制备方法
JP5920117B2 (ja) * 2012-08-30 2016-05-18 新日鐵住金株式会社 高純度アルミニウム製スパッタリングターゲット用熱間圧材の製造方法
CN104046931A (zh) * 2013-03-15 2014-09-17 中国钢铁股份有限公司 纯铝靶的制造方法
CN110709532B (zh) * 2017-06-22 2021-07-16 株式会社Uacj 溅射靶材、溅射靶、溅射靶用铝板及其制造方法
CN113061852B (zh) * 2021-03-17 2022-09-09 宁波江丰电子材料股份有限公司 一种高纯铝或铝合金靶材及其制备方法
CN114959595B (zh) * 2021-12-17 2024-03-29 常州苏晶电子材料有限公司 溅射用高纯铝钕合金靶材及其制造方法
KR20230095655A (ko) * 2021-12-22 2023-06-29 주식회사 나이스엘엠에스 알루미늄 스퍼터링 타겟 제조 방법
KR20230095654A (ko) * 2021-12-22 2023-06-29 주식회사 나이스엘엠에스 알루미늄 스퍼터링 타겟 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6001227A (en) * 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
US6197129B1 (en) * 2000-05-04 2001-03-06 The United States Of America As Represented By The United States Department Of Energy Method for producing ultrafine-grained materials using repetitive corrugation and straightening
AU2001265309A1 (en) * 2000-06-02 2001-12-17 Honeywell International, Inc. Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method

Also Published As

Publication number Publication date
EP1444376A4 (en) 2008-04-02
KR20050039741A (ko) 2005-04-29
EP1444376B1 (en) 2010-10-06
US20050230011A1 (en) 2005-10-20
JP2005509741A (ja) 2005-04-14
TWI263688B (en) 2006-10-11
KR100938537B1 (ko) 2010-01-25
JP4477875B2 (ja) 2010-06-09
EP1444376A1 (en) 2004-08-11
WO2003042421A1 (en) 2003-05-22
TW200300457A (en) 2003-06-01
US7320736B2 (en) 2008-01-22

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