IL150788A0 - Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser - Google Patents

Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser

Info

Publication number
IL150788A0
IL150788A0 IL15078801A IL15078801A IL150788A0 IL 150788 A0 IL150788 A0 IL 150788A0 IL 15078801 A IL15078801 A IL 15078801A IL 15078801 A IL15078801 A IL 15078801A IL 150788 A0 IL150788 A0 IL 150788A0
Authority
IL
Israel
Prior art keywords
laser
mode
external
locked
cavity
Prior art date
Application number
IL15078801A
Other languages
English (en)
Original Assignee
Gigatera Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gigatera Ag filed Critical Gigatera Ag
Publication of IL150788A0 publication Critical patent/IL150788A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094069—Multi-mode pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
IL15078801A 2000-02-11 2001-02-09 Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser IL150788A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/502,959 US6735234B1 (en) 2000-02-11 2000-02-11 Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
PCT/CH2001/000088 WO2001059895A1 (en) 2000-02-11 2001-02-09 Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser

Publications (1)

Publication Number Publication Date
IL150788A0 true IL150788A0 (en) 2003-02-12

Family

ID=24000157

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15078801A IL150788A0 (en) 2000-02-11 2001-02-09 Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser

Country Status (9)

Country Link
US (1) US6735234B1 (de)
EP (1) EP1264373B1 (de)
JP (1) JP4977298B2 (de)
AT (1) ATE330347T1 (de)
AU (1) AU2994401A (de)
CA (1) CA2399661A1 (de)
DE (1) DE60120651T2 (de)
IL (1) IL150788A0 (de)
WO (1) WO2001059895A1 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030112843A1 (en) * 2001-01-19 2003-06-19 Siros Technology, Inc. Method and apparatus for mode-locked vertical cavity laser with equalized mode response
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
FR2835065B1 (fr) * 2002-01-22 2004-04-02 Centre Nat Rech Scient Composant a absorbant saturable et procede de fabrication de composant a absorbant saturable
DE10214120B4 (de) * 2002-03-28 2007-06-06 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
TW595059B (en) * 2002-05-03 2004-06-21 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
DE10223879A1 (de) * 2002-05-29 2003-12-11 Univ Stuttgart Strahlwerkzeuge Laserverstärkersystem
US7756172B2 (en) * 2002-05-29 2010-07-13 Osram Opto Semiconductors Gmbh Optically pumped semi-conductive laser
US6859481B2 (en) * 2002-07-16 2005-02-22 Applied Optoelectronics, Inc. Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power
JP2004253800A (ja) * 2003-02-19 2004-09-09 Osram Opto Semiconductors Gmbh レーザーパルス形成用レーザー装置
GB2399941A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
DE10339980B4 (de) * 2003-08-29 2011-01-05 Osram Opto Semiconductors Gmbh Halbleiterlaser mit reduzierter Verlustwärme
US7116687B2 (en) * 2003-09-12 2006-10-03 Jds Uniphase Corporation High repetition rate passively Q-switched laser for blue laser based on interactions in fiber
DE602004023531D1 (de) * 2003-10-24 2009-11-19 Koheras As Optisches system zur bereitstellung von kurzen laserimpulsen
US6947466B2 (en) 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
US20050190810A1 (en) * 2004-02-27 2005-09-01 Stuart Butterworth Contact-bonded optically pumped semiconductor laser structure
US20060029112A1 (en) * 2004-03-31 2006-02-09 Young Ian A Surface emitting laser with an integrated absorber
DE102004031711B4 (de) * 2004-06-30 2008-09-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung
US7336062B2 (en) * 2004-11-08 2008-02-26 Lucent Technologies Inc. Optically measuring electric field intensities
US7609376B2 (en) * 2005-01-05 2009-10-27 Hewlett-Packard Development Company, L.P. Method and apparatus for pixel display and SERS analysis
US7729392B2 (en) * 2005-01-28 2010-06-01 Scientific Materials Corporation Monoblock laser with reflective substrate
KR100668329B1 (ko) * 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
US7817704B2 (en) * 2005-03-17 2010-10-19 Scientific Materials Corporation Monoblock laser with improved alignment features
DE102005017677B4 (de) * 2005-04-11 2007-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Auslegung einer monolithisch integrierten, modengekoppelten Halbleiterlaser-Pulsquelle
US7469001B1 (en) * 2005-05-23 2008-12-23 The United States Of America As Represented By The Secretary Of The Air Force Mid-IR optically pumped semiconductor laser
KR20070027232A (ko) * 2005-09-06 2007-03-09 삼성전자주식회사 후펌핑 수직외부공진형 표면발광 레이저
DE102005056949B4 (de) * 2005-09-30 2013-08-22 Osram Opto Semiconductors Gmbh Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser
US7471705B2 (en) * 2005-11-09 2008-12-30 Lockheed Martin Corporation Ultraviolet laser system and method having wavelength in the 200-nm range
KR20070052059A (ko) * 2005-11-16 2007-05-21 삼성전자주식회사 펌프 빔의 재활용이 가능한 외부 공진기형 면발광 레이저
KR101100431B1 (ko) * 2005-11-22 2011-12-30 삼성전자주식회사 고효율 2차 조화파 생성 외부 공진기형 면발광 레이저
US20090274177A1 (en) * 2006-01-04 2009-11-05 The Arizona Bd Of Reg On Behalf Of The Univ Of Az Turnable laser device
KR20070076251A (ko) * 2006-01-18 2007-07-24 삼성전자주식회사 외부 공진기형 면발광 레이저
US7839904B1 (en) 2006-01-26 2010-11-23 Scientific Materials Corporation Monoblock laser systems and methods
DE102006024220A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CA2651247A1 (en) 2006-05-01 2007-11-15 Adaptive Spectrum And Signal Alignment, Inc. Methods and apparatus to perform line testing at customer premises
KR100754402B1 (ko) * 2006-05-16 2007-08-31 삼성전자주식회사 수직외부공진기형 면발광 레이저
DE102007003832A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser, Herstellungsverfahren für einen solchen und Vorrichtung zum Messen eines Abstands und/oder einer Geschwindigkeit
US7433374B2 (en) 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers
US8953647B1 (en) 2007-03-21 2015-02-10 Lockheed Martin Corporation High-power laser using thulium-doped fiber amplifier and frequency quadrupling for blue output
DE102007046752B4 (de) * 2007-09-28 2022-09-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Quasisubstrat für ein optoelektronisches Bauelement und optoelektronisches Bauelement
DE102008006993A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser
EP2245710A2 (de) * 2008-02-22 2010-11-03 CSEM Centre Suisse D'electronique Et De Microtechnique SA Verfahren und vorrichtung zur stabilisierung des spektrums einer gepulsten kohärenten optischen quelle
US20090290606A1 (en) * 2008-05-23 2009-11-26 Chilla Juan L Mode-locked external-cavity surface-emitting semiconductor laser
US20110150013A1 (en) * 2009-12-17 2011-06-23 Coherent, Inc. Resonant pumping of thin-disk laser with an optically pumped external-cavity surface-emitting semiconductor laser
US8340151B2 (en) 2010-12-13 2012-12-25 Ut-Battelle, Llc V-shaped resonators for addition of broad-area laser diode arrays
US9551619B1 (en) * 2011-09-23 2017-01-24 Rockwell Collins, Inc. Terahertz laser
US8866149B2 (en) 2012-02-17 2014-10-21 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
US9124062B2 (en) 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US9112331B2 (en) * 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
GB2500676B (en) 2012-03-29 2015-12-16 Solus Technologies Ltd Self mode-locking semiconductor disk laser (SDL)
WO2013152447A2 (en) 2012-04-11 2013-10-17 Time-Bandwidth Products Ag Pulsed semiconductor laser
US9112332B2 (en) 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
US9136673B2 (en) 2012-07-20 2015-09-15 The Regents Of The University Of California Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
JP6328112B2 (ja) 2012-07-27 2018-05-23 ソルラブス、インコーポレイテッド Ｍｅｍｓチューナブル短共振器レーザ
AU2013380267B2 (en) 2013-02-27 2017-03-30 Alcon Inc. Laser apparatus and method for laser processing a target material
GB2519773C (en) * 2013-10-29 2018-01-03 Solus Tech Limited Mode-locking semiconductor disk laser (SDL)
GB2521140B (en) 2013-12-10 2018-05-09 Solus Tech Limited Improved self mode-locking semiconductor disk laser (SDL)
GB2525252B (en) 2014-04-18 2016-08-17 Solus Tech Ltd Improved passively mode-locking semiconductor disk laser (SDL)
GB2526063B (en) * 2014-04-28 2016-10-26 Solus Tech Ltd Optical amplifier
US10530115B2 (en) 2014-10-02 2020-01-07 ETH Zürich Pulsed laser
DE102016104602A1 (de) * 2016-03-14 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle
DE102017112235A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
CN109193342B (zh) * 2018-10-15 2019-11-15 中国科学院理化技术研究所 一种半导体激光器
DE102020115133A1 (de) * 2020-06-08 2021-12-09 Laser Zentrum Hannover E.V. Verfahren und Vorrichtung zum Erzeugen eines Laserpulses
EP4131674A1 (de) 2021-08-06 2023-02-08 ETH Zurich Strahlungsquelle

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2760451B2 (ja) 1990-06-25 1998-05-28 松下電子工業株式会社 超短パルスレーザ光発生装置
EP0567693A1 (de) * 1992-04-27 1993-11-03 BRITISH TELECOMMUNICATIONS public limited company Optische Taktrückgewinnung
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5469454A (en) * 1994-05-02 1995-11-21 University Of Central Florida Mode locked laser diode in a high power solid state regenerative amplifier and mount mechanism
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US5987049A (en) * 1998-04-24 1999-11-16 Time-Bandwidth Products Ag Mode locked solid-state laser pumped by a non-diffraction-limited pumping source and method for generating pulsed laser radiation by pumping with a non-diffraction-limited pumping beam
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6252892B1 (en) * 1998-09-08 2001-06-26 Imra America, Inc. Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters
US6192058B1 (en) * 1998-09-18 2001-02-20 Sarnoff Corporation Multiwavelength actively mode-locked external cavity semiconductor laser
US6393035B1 (en) * 1999-02-01 2002-05-21 Gigatera Ag High-repetition rate passively mode-locked solid-state laser
WO2001043242A1 (en) * 1999-12-08 2001-06-14 Time-Bandwidth Products Ag Mode-locked thin-disk laser

Also Published As

Publication number Publication date
EP1264373B1 (de) 2006-06-14
ATE330347T1 (de) 2006-07-15
JP4977298B2 (ja) 2012-07-18
CA2399661A1 (en) 2001-08-16
AU2994401A (en) 2001-08-20
JP2003523092A (ja) 2003-07-29
DE60120651T2 (de) 2007-05-31
EP1264373A1 (de) 2002-12-11
US6735234B1 (en) 2004-05-11
DE60120651D1 (de) 2006-07-27
WO2001059895A1 (en) 2001-08-16

Similar Documents

Publication Publication Date Title
IL150788A0 (en) Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
US7801197B2 (en) High power laser device
CN110932075B (zh) 一种双波长脉冲对激光输出方法及激光器
Jasim et al. Passively modelocked vertical extended cavity surface emitting diode laser
Fischer et al. High single-mode power observed from a coupled-resonator vertical-cavity laser diode
Garnache et al. Pico-second passively mode locked surface-emitting laser with self-assembled semiconductor quantum dot absorber
Wohlfeil et al. Generation of picosecond pulses from tapered laser diodes with over 40 W peak power at wavelengths of 780 nm and 830 nm
Rana et al. Noise and timing jitter in active and hybrid mode-locked semiconductor lasers
Maas et al. MIXSELs-a new class of ultrafast semiconductor lasers
Okhotnikov et al. Stable relaxation-oscillation Er/sup 3+/-doped fiber laser
Jacobovitz et al. Pump power and saturable absorber effect on a colliding pulse-modelocked dye laser emitting pulses with 47 fs
Häring et al. Passively mode-locked diode-pumped surface-emitting semiconductor laser
CN116706666A (zh) 提升脉冲稳定性的芯片级垂直集成式被动调q激光器
Golovin et al. Gain switching sub-ns pulse laser diode optimization for time-of-flight laser rangefinding
Wittwer et al. Modelocked Integrated External-Cavity Surface Emitting Laser (MIXSEL) generates 660 mW average power in 23-ps pulses at 3 GHz repetition rate
Klehr et al. High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser
Mehuys et al. Operating characteristics of broad area traveling wave semiconductor amplifiers
Ahmad et al. Passive Modelocking in an Electrically Pumped High Power Semiconductor Laser at 1550 nm
Fischer et al. Multi-section vertical-cavity laser diode for high power single-mode operation
Rudin et al. High-performance mode-locking with up to 50 GHz repetition rate from integrable VECSELs
Haring et al. Passively mode-locked surface-emitting semiconductor laser with> 200 mW average power
Cocquelin et al. Compact diode-pumped single-frequency VECSEL for cesium atomic clocks
Roberts ueete Q W353
Häring et al. Passively mode-locked diode-pumped surface-emitting diode laser
Mangold et al. MIXSEL: Picosecond semiconductor disk laser with integrated saturable absorber