IL136704A - Hybrid semiconductor imaging device - Google Patents
Hybrid semiconductor imaging deviceInfo
- Publication number
- IL136704A IL136704A IL13670498A IL13670498A IL136704A IL 136704 A IL136704 A IL 136704A IL 13670498 A IL13670498 A IL 13670498A IL 13670498 A IL13670498 A IL 13670498A IL 136704 A IL136704 A IL 136704A
- Authority
- IL
- Israel
- Prior art keywords
- readout
- detector
- substrate
- substrates
- contact
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 72
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 190
- 230000005855 radiation Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 238000002601 radiography Methods 0.000 description 2
- BYHQTRFJOGIQAO-GOSISDBHSA-N 3-(4-bromophenyl)-8-[(2R)-2-hydroxypropyl]-1-[(3-methoxyphenyl)methyl]-1,3,8-triazaspiro[4.5]decan-2-one Chemical compound C[C@H](CN1CCC2(CC1)CN(C(=O)N2CC3=CC(=CC=C3)OC)C4=CC=C(C=C4)Br)O BYHQTRFJOGIQAO-GOSISDBHSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011976 chest X-ray Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical class C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006335 response to radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Photographic Developing Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9726765A GB2332562B (en) | 1997-12-18 | 1997-12-18 | Hybrid semiconductor imaging device |
| PCT/EP1998/007522 WO1999033116A1 (en) | 1997-12-18 | 1998-11-16 | Hybrid semiconductor imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL136704A0 IL136704A0 (en) | 2001-06-14 |
| IL136704A true IL136704A (en) | 2004-07-25 |
Family
ID=10823835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13670498A IL136704A (en) | 1997-12-18 | 1998-11-16 | Hybrid semiconductor imaging device |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6323475B1 (ja) |
| EP (1) | EP1042814B1 (ja) |
| JP (1) | JP4112175B2 (ja) |
| AT (1) | ATE469439T1 (ja) |
| AU (1) | AU1874599A (ja) |
| DE (1) | DE69841688D1 (ja) |
| GB (1) | GB2332562B (ja) |
| IL (1) | IL136704A (ja) |
| WO (1) | WO1999033116A1 (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933471A1 (de) * | 1999-07-20 | 2001-02-01 | Daimler Chrysler Ag | Bildaufnehmer mit integrierter Signalverarbeitung und Bildaufnahmeverfahren |
| US7189971B2 (en) * | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
| US7170062B2 (en) * | 2002-03-29 | 2007-01-30 | Oy Ajat Ltd. | Conductive adhesive bonded semiconductor substrates for radiation imaging devices |
| US6841784B2 (en) * | 2002-07-02 | 2005-01-11 | Ray Therapy Imaging Ab | Radiation sensor device |
| US6844543B2 (en) * | 2002-07-03 | 2005-01-18 | The Regents Of The University Of California | Quantitation of absorbed or deposited materials on a substrate that measures energy deposition |
| US7223981B1 (en) * | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
| US7247858B2 (en) * | 2003-04-10 | 2007-07-24 | Agfa Healthcare, N.V. | Method for creating a contiguous image using multiple X-ray imagers |
| DE10357135B4 (de) * | 2003-12-06 | 2007-01-04 | X-Fab Semiconductor Foundries Ag | Fotodetektor mit Transimpendanzverstärker und Auswerteelektronik in monolithischer Integration und Herstellungsverfahren |
| US7217915B2 (en) * | 2004-05-07 | 2007-05-15 | Sun Microsystems, Inc. | Method and apparatus for detecting the position of light which is incident to a semiconductor die |
| GB2441814B (en) * | 2006-09-07 | 2012-04-11 | Detection Technology Oy | Photodiode array output signal multiplexing |
| US20110001052A1 (en) * | 2006-12-04 | 2011-01-06 | Luc Struye | Computed radiography system |
| JP2008277511A (ja) * | 2007-04-27 | 2008-11-13 | Fujifilm Corp | 撮像素子及び撮像装置 |
| US8368469B2 (en) * | 2010-03-10 | 2013-02-05 | Purdue Research Foundation | Silicon-on-insulator high power amplifiers |
| WO2011145171A1 (ja) | 2010-05-18 | 2011-11-24 | キヤノン株式会社 | 撮像システム及びその制御方法 |
| WO2015125443A1 (ja) * | 2014-02-19 | 2015-08-27 | パナソニックＩｐマネジメント株式会社 | 受光デバイスおよびその製造方法 |
| US20150276945A1 (en) * | 2014-03-25 | 2015-10-01 | Oy Ajat Ltd. | Semiconductor bump-bonded x-ray imaging device |
| US10686003B2 (en) * | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| EP3534795B1 (en) * | 2016-11-04 | 2021-01-13 | Hologic, Inc. | Medical imaging device |
| SE542767C2 (en) * | 2018-05-15 | 2020-07-07 | Xcounter Ab | Sensor unit and radiation detector |
| RU2730045C2 (ru) * | 2018-09-11 | 2020-08-14 | Объединенный Институт Ядерных Исследований (Оияи) | Гибридный пиксельный детектор ионизирующих излучений |
| EP3690490A1 (en) * | 2019-02-04 | 2020-08-05 | ams International AG | X-ray detector component, x-ray detection module, imaging device and method for manufacturing an x-ray detector component |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2581251B1 (fr) * | 1985-04-30 | 1987-09-11 | Thomson Csf | Dispositif d'aboutement optique de detecteurs photosensibles |
| EP0415541B1 (en) * | 1989-07-29 | 1994-10-05 | Shimadzu Corporation | Semiconductor-based radiation image detector and its manufacturing method |
| FR2652655A1 (fr) | 1989-10-04 | 1991-04-05 | Commissariat Energie Atomique | Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images. |
| US5245191A (en) * | 1992-04-14 | 1993-09-14 | The Board Of Regents Of The University Of Arizona | Semiconductor sensor for gamma-ray tomographic imaging system |
| FR2693033B1 (fr) | 1992-06-30 | 1994-08-19 | Commissariat Energie Atomique | Dispositif d'imagerie de grande dimension. |
| US5336879A (en) | 1993-05-28 | 1994-08-09 | David Sarnoff Research Center, Inc. | Pixel array having image forming pixel elements integral with peripheral circuit elements |
| GB2289983B (en) * | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
| GB2305096B (en) | 1995-08-29 | 1997-09-10 | Simage Oy | Imaging system and method |
-
1997
- 1997-12-18 GB GB9726765A patent/GB2332562B/en not_active Expired - Fee Related
-
1998
- 1998-06-10 US US09/095,152 patent/US6323475B1/en not_active Expired - Lifetime
- 1998-11-16 WO PCT/EP1998/007522 patent/WO1999033116A1/en active Application Filing
- 1998-11-16 AU AU18745/99A patent/AU1874599A/en not_active Abandoned
- 1998-11-16 DE DE69841688T patent/DE69841688D1/de not_active Expired - Lifetime
- 1998-11-16 JP JP2000525930A patent/JP4112175B2/ja not_active Expired - Lifetime
- 1998-11-16 AT AT98963497T patent/ATE469439T1/de not_active IP Right Cessation
- 1998-11-16 IL IL13670498A patent/IL136704A/en not_active IP Right Cessation
- 1998-11-16 EP EP98963497A patent/EP1042814B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1042814B1 (en) | 2010-05-26 |
| IL136704A0 (en) | 2001-06-14 |
| AU1874599A (en) | 1999-07-12 |
| EP1042814A1 (en) | 2000-10-11 |
| JP4112175B2 (ja) | 2008-07-02 |
| GB9726765D0 (en) | 1998-02-18 |
| ATE469439T1 (de) | 2010-06-15 |
| GB2332562B (en) | 2000-01-12 |
| GB2332562A (en) | 1999-06-23 |
| WO1999033116A1 (en) | 1999-07-01 |
| GB2332562A9 (en) | |
| DE69841688D1 (de) | 2010-07-08 |
| US6323475B1 (en) | 2001-11-27 |
| JP2001527294A (ja) | 2001-12-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| EXP | Patent expired |