IL132431A0 - Method and device for exposure control method and device for exposure and method of manufacture of device - Google Patents
Method and device for exposure control method and device for exposure and method of manufacture of deviceInfo
- Publication number
- IL132431A0 IL132431A0 IL13243198A IL13243198A IL132431A0 IL 132431 A0 IL132431 A0 IL 132431A0 IL 13243198 A IL13243198 A IL 13243198A IL 13243198 A IL13243198 A IL 13243198A IL 132431 A0 IL132431 A0 IL 132431A0
- Authority
- IL
- Israel
- Prior art keywords
- exposure
- manufacture
- exposure control
- control method
- control
- Prior art date
Links
- 238000000034 method Methods 0.000 title 3
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11625597 | 1997-04-18 | ||
JP10974897 | 1997-04-25 | ||
JP12452797 | 1997-05-14 | ||
PCT/JP1998/001777 WO1998048452A1 (fr) | 1997-04-18 | 1998-04-17 | Procede et dispositif de commande de l'exposition, procede et dispositif d'exposition, et procede de fabrication dudit dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
IL132431A0 true IL132431A0 (en) | 2001-03-19 |
Family
ID=27311546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13243198A IL132431A0 (en) | 1997-04-18 | 1998-04-17 | Method and device for exposure control method and device for exposure and method of manufacture of device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050041226A1 (xx) |
EP (1) | EP1014429A4 (xx) |
KR (1) | KR20010006432A (xx) |
AU (1) | AU6853698A (xx) |
IL (1) | IL132431A0 (xx) |
TW (1) | TW463238B (xx) |
WO (1) | WO1998048452A1 (xx) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69837483T2 (de) | 1997-07-25 | 2007-12-20 | Nikon Corp. | Belichtungsverfahren und Belichtungsapparat |
DE19855106A1 (de) * | 1998-11-30 | 2000-05-31 | Zeiss Carl Fa | Beleuchtungssystem für die VUV-Mikrolithographie |
EP1014197B1 (en) * | 1998-12-16 | 2006-11-08 | ASML Netherlands B.V. | Lithographic projection apparatus |
TW460755B (en) | 1998-12-16 | 2001-10-21 | Asm Lithography Bv | Lithographic projection apparatus |
JP2001110710A (ja) | 1999-10-08 | 2001-04-20 | Nikon Corp | 露光装置、露光方法、および半導体デバイスの製造方法 |
JP2001267239A (ja) | 2000-01-14 | 2001-09-28 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2001196293A (ja) * | 2000-01-14 | 2001-07-19 | Canon Inc | 露光装置及びそれを用いたデバイスの製造方法 |
JP4585702B2 (ja) * | 2001-02-14 | 2010-11-24 | キヤノン株式会社 | 露光装置 |
US20030014146A1 (en) * | 2001-07-12 | 2003-01-16 | Kabushiki Kaisha Toshiba | Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method |
ATE445579T1 (de) * | 2002-04-23 | 2009-10-15 | Asahi Glass Co Ltd | Synthetisches quarzglas für optisches element, projektionsbelichtungsvorrichtung und projektionsbelichtungsverfahren |
JP4366098B2 (ja) * | 2003-03-04 | 2009-11-18 | キヤノン株式会社 | 投影露光装置および方法ならびにデバイス製造方法 |
US8346497B2 (en) * | 2003-03-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for testing semiconductor film, semiconductor device and manufacturing method thereof |
US7384149B2 (en) * | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
TWI297808B (en) * | 2003-09-08 | 2008-06-11 | Fuji Corp | Photo-amount regulation method and equipment |
TWI311691B (en) * | 2003-10-30 | 2009-07-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR100806036B1 (ko) * | 2003-11-13 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 반도체 웨이퍼 노광 방법 |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7319229B2 (en) * | 2003-12-29 | 2008-01-15 | Kla-Tencor Technologies Corporation | Illumination apparatus and methods |
DE102004044669B4 (de) * | 2004-09-15 | 2006-07-06 | Texas Instruments Deutschland Gmbh | Verfahren zur Überwachung des Lichtdosiergeräts eines Photolithographie-Systems |
JP4752392B2 (ja) * | 2005-08-11 | 2011-08-17 | 大日本印刷株式会社 | パターン形成体の製造方法 |
JP2007065277A (ja) * | 2005-08-31 | 2007-03-15 | Topcon Corp | 光学部材の透過率向上方法と、その方法によって透過率を向上させた光学部材 |
JP5305568B2 (ja) * | 2006-05-22 | 2013-10-02 | 株式会社東芝 | 露光装置及びケミカルフィルタ寿命検知方法 |
JP2008277585A (ja) * | 2007-04-27 | 2008-11-13 | Canon Inc | 露光装置の洗浄装置及び露光装置 |
JP2009180929A (ja) * | 2008-01-30 | 2009-08-13 | Fujifilm Corp | 電子機器 |
NL1036545A1 (nl) * | 2008-03-04 | 2009-09-07 | Asml Netherlands Bv | Lithographic Apparatus and Method. |
US8929630B2 (en) * | 2009-03-27 | 2015-01-06 | Life Technologies Corporation | Systems and methods for assessing images |
JP5554620B2 (ja) * | 2010-04-14 | 2014-07-23 | 株式会社ニューフレアテクノロジー | 描画装置、描画方法および描画装置の異常診断方法 |
DE102012210071A1 (de) * | 2012-06-15 | 2013-12-19 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage |
JP6448220B2 (ja) * | 2014-05-22 | 2019-01-09 | キヤノン株式会社 | 露光装置、露光方法及びデバイスの製造方法 |
US9733567B2 (en) | 2014-09-30 | 2017-08-15 | Sii Semiconductor Corporation | Reticle transmittance measurement method, and projection exposure method using the same |
CN108121163B (zh) * | 2016-11-29 | 2019-10-25 | 上海微电子装备(集团)股份有限公司 | 一种光源曝光剂量控制系统及控制方法 |
CN114002918B (zh) * | 2021-10-12 | 2022-07-15 | 清华大学 | 光刻曝光剂量的测算方法、装置、设备、控制系统及介质 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0652708B2 (ja) * | 1984-11-01 | 1994-07-06 | 株式会社ニコン | 投影光学装置 |
JP2682067B2 (ja) * | 1988-10-17 | 1997-11-26 | 株式会社ニコン | 露光装置及び露光方法 |
US5191374A (en) * | 1988-11-17 | 1993-03-02 | Nikon Corporation | Exposure control apparatus |
JP2998361B2 (ja) * | 1991-11-26 | 2000-01-11 | 松下電器産業株式会社 | 顧客注文処理装置 |
JPH05335208A (ja) * | 1992-06-02 | 1993-12-17 | Nikon Corp | 投影露光装置 |
JP2856608B2 (ja) * | 1992-08-28 | 1999-02-10 | 山形日本電気株式会社 | 半導体露光装置 |
JP3301153B2 (ja) * | 1993-04-06 | 2002-07-15 | 株式会社ニコン | 投影露光装置、露光方法、及び素子製造方法 |
JP2862477B2 (ja) * | 1993-06-29 | 1999-03-03 | キヤノン株式会社 | 露光装置及び該露光装置を用いてデバイスを製造する方法 |
JP3093528B2 (ja) * | 1993-07-15 | 2000-10-03 | キヤノン株式会社 | 走査型露光装置 |
US5777724A (en) * | 1994-08-24 | 1998-07-07 | Suzuki; Kazuaki | Exposure amount control device |
US6002467A (en) * | 1995-03-16 | 1999-12-14 | Nikon Corporation | Exposure apparatus and method |
KR100210569B1 (ko) * | 1995-09-29 | 1999-07-15 | 미따라이 하지메 | 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법 |
JP3459742B2 (ja) * | 1996-01-17 | 2003-10-27 | キヤノン株式会社 | 露光装置及びそれを用いたデバイスの製造方法 |
-
1998
- 1998-04-17 WO PCT/JP1998/001777 patent/WO1998048452A1/ja not_active Application Discontinuation
- 1998-04-17 AU AU68536/98A patent/AU6853698A/en not_active Abandoned
- 1998-04-17 IL IL13243198A patent/IL132431A0/xx unknown
- 1998-04-17 KR KR1019997009522A patent/KR20010006432A/ko active IP Right Grant
- 1998-04-17 TW TW087105868A patent/TW463238B/zh active
- 1998-04-17 EP EP98914077A patent/EP1014429A4/en not_active Withdrawn
-
2002
- 2002-03-06 US US10/091,325 patent/US20050041226A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1998048452A1 (fr) | 1998-10-29 |
US20050041226A1 (en) | 2005-02-24 |
TW463238B (en) | 2001-11-11 |
KR20010006432A (ko) | 2001-01-26 |
AU6853698A (en) | 1998-11-13 |
EP1014429A4 (en) | 2000-07-19 |
EP1014429A1 (en) | 2000-06-28 |
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