IL106638A - Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same - Google Patents

Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same

Info

Publication number
IL106638A
IL106638A IL10663893A IL10663893A IL106638A IL 106638 A IL106638 A IL 106638A IL 10663893 A IL10663893 A IL 10663893A IL 10663893 A IL10663893 A IL 10663893A IL 106638 A IL106638 A IL 106638A
Authority
IL
Israel
Prior art keywords
approximately
layer
silicon
coating
layer comprises
Prior art date
Application number
IL10663893A
Other languages
English (en)
Other versions
IL106638A0 (en
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL106638A0 publication Critical patent/IL106638A0/xx
Publication of IL106638A publication Critical patent/IL106638A/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
IL10663893A 1992-08-21 1993-08-09 Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same IL106638A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/934,136 US5262633A (en) 1992-08-21 1992-08-21 Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same

Publications (2)

Publication Number Publication Date
IL106638A0 IL106638A0 (en) 1994-08-26
IL106638A true IL106638A (en) 1996-10-31

Family

ID=25465027

Family Applications (1)

Application Number Title Priority Date Filing Date
IL10663893A IL106638A (en) 1992-08-21 1993-08-09 Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same

Country Status (6)

Country Link
US (1) US5262633A (ja)
EP (1) EP0585055B1 (ja)
JP (1) JPH0732258B2 (ja)
DE (1) DE69308686T2 (ja)
ES (1) ES2101235T3 (ja)
IL (1) IL106638A (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646437A (en) * 1991-08-08 1997-07-08 Santa Barbara Research Center Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
SE9301428D0 (sv) * 1993-04-28 1993-04-28 Tetra Laval Holdings & Finance Sa Elektronaccelerator foer sterilisering av foerpackningsmaterial i en aseptisk foerpackningsmaskin
US5424645A (en) * 1993-11-18 1995-06-13 Doty Scientific, Inc. Doubly broadband triple resonance or quad resonance NMR probe circuit
US6673438B1 (en) 1994-05-03 2004-01-06 Cardinal Cg Company Transparent article having protective silicon nitride film
MX9605356A (es) * 1994-05-03 1997-12-31 Cardinal Ig Co Articulo transparente que tiene pelicula de nitruro de silicio protectora.
US6419742B1 (en) * 1994-11-15 2002-07-16 Texas Instruments Incorporated method of forming lattice matched layer over a surface of a silicon substrate
US5812405A (en) * 1995-05-23 1998-09-22 Viratec Thin Films, Inc. Three variable optimization system for thin film coating design
US5672243A (en) * 1995-11-28 1997-09-30 Mosel Vitelic, Inc. Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide
US6074730A (en) * 1997-12-31 2000-06-13 The Boc Group, Inc. Broad-band antireflection coating having four sputtered layers
KR100269330B1 (ko) * 1998-06-29 2000-12-01 윤종용 반사 방지 캡 및 스페이서를 구비하는 반도체장치, 이의 제조방법 및 이를 이용한 포토레지스트 패턴의 제조방법
US6218719B1 (en) * 1998-09-18 2001-04-17 Capella Microsystems, Inc. Photodetector and device employing the photodetector for converting an optical signal into an electrical signal
KR100636093B1 (ko) * 1999-07-12 2006-10-19 삼성전자주식회사 광검출기 디바이스 및 그 제조방법
US20020020846A1 (en) * 2000-04-20 2002-02-21 Bo Pi Backside illuminated photodiode array
US6665116B1 (en) * 2000-07-10 2003-12-16 Hrl Laboratories, Llc Achromatic lens for millimeter-wave and infrared bands
US6567211B1 (en) 2000-07-10 2003-05-20 Hrl Laboratories, Llc Dual-band millimeter-wave and infrared anti-reflecting coatings
US6589657B2 (en) 2001-08-31 2003-07-08 Von Ardenne Anlagentechnik Gmbh Anti-reflection coatings and associated methods
DE10342501A1 (de) * 2003-09-12 2005-05-04 Zeiss Carl Smt Ag Lichtdetektor mit erhöhter Quanteneffizienz
WO2005045940A1 (ja) * 2003-11-11 2005-05-19 Ngk Insulators, Ltd. 光素子及び光モジュール
JP4570152B2 (ja) * 2005-06-01 2010-10-27 国立大学法人電気通信大学 透明導電性成形物及びその製造方法
US7718888B2 (en) * 2005-12-30 2010-05-18 Sunpower Corporation Solar cell having polymer heterojunction contacts
WO2010042951A2 (en) * 2008-10-10 2010-04-15 Nano Terra Inc. Anti-reflective coatings comprising ordered layers of nanowires and methods of making and using the same
GB2475086B (en) * 2009-11-05 2014-02-05 Cmosis Nv Backside illuminated image sensor
US8927934B2 (en) * 2010-09-13 2015-01-06 Ricoh Company, Ltd. Thermal infrared sensor and manufacturing method thereof
KR101691340B1 (ko) * 2014-10-16 2016-12-29 도판 인사츠 가부시키가이샤 양자 도트 보호 필름, 그것을 사용한 양자 도트 필름 및 백라이트 유닛
DE102016002597A1 (de) 2016-03-04 2017-09-07 Optics Balzers Ag Breitbandentspiegelung für den NlR-Bereich

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1136218A (en) * 1965-12-14 1968-12-11 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor optical devices
US3463574A (en) * 1967-06-26 1969-08-26 Perkin Elmer Corp Multilayer antireflection coating for low index materials
CH557546A (de) * 1972-10-19 1974-12-31 Balzers Patent Beteilig Ag Aus einer mehrzahl von einfachen oder zusammengesetzen (lambda)/4-schichten bestehender reflexionsvermindernder belag.
JPS57155785A (en) * 1981-03-23 1982-09-25 Toshiba Corp Semiconductor photo-receiving element photodetector
US4528418A (en) * 1984-02-24 1985-07-09 Energy Conversion Devices, Inc. Photoresponsive semiconductor device having a double layer anti-reflective coating
DE3420887A1 (de) * 1984-06-05 1985-12-05 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
US5086328A (en) * 1988-02-08 1992-02-04 Santa Barbara Research Center Photo-anodic oxide surface passivation for semiconductors
JPH025687A (ja) * 1988-06-22 1990-01-10 Toshiba Glass Co Ltd イメージセンサ用前面ガラス

Also Published As

Publication number Publication date
DE69308686D1 (de) 1997-04-17
ES2101235T3 (es) 1997-07-01
IL106638A0 (en) 1994-08-26
DE69308686T2 (de) 1997-10-16
US5262633A (en) 1993-11-16
JPH06188439A (ja) 1994-07-08
EP0585055B1 (en) 1997-03-12
JPH0732258B2 (ja) 1995-04-10
EP0585055A1 (en) 1994-03-02

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