DE69308686T2 - Breitband-Antireflex-Schicht für einen Indium-Antimonid-Photodiode - Google Patents
Breitband-Antireflex-Schicht für einen Indium-Antimonid-PhotodiodeInfo
- Publication number
- DE69308686T2 DE69308686T2 DE69308686T DE69308686T DE69308686T2 DE 69308686 T2 DE69308686 T2 DE 69308686T2 DE 69308686 T DE69308686 T DE 69308686T DE 69308686 T DE69308686 T DE 69308686T DE 69308686 T2 DE69308686 T2 DE 69308686T2
- Authority
- DE
- Germany
- Prior art keywords
- photodiode
- antireflection layer
- indium antimonide
- broadband antireflection
- broadband
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/934,136 US5262633A (en) | 1992-08-21 | 1992-08-21 | Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69308686D1 DE69308686D1 (de) | 1997-04-17 |
DE69308686T2 true DE69308686T2 (de) | 1997-10-16 |
Family
ID=25465027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69308686T Expired - Fee Related DE69308686T2 (de) | 1992-08-21 | 1993-08-19 | Breitband-Antireflex-Schicht für einen Indium-Antimonid-Photodiode |
Country Status (6)
Country | Link |
---|---|
US (1) | US5262633A (de) |
EP (1) | EP0585055B1 (de) |
JP (1) | JPH0732258B2 (de) |
DE (1) | DE69308686T2 (de) |
ES (1) | ES2101235T3 (de) |
IL (1) | IL106638A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016002597A1 (de) | 2016-03-04 | 2017-09-07 | Optics Balzers Ag | Breitbandentspiegelung für den NlR-Bereich |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5646437A (en) * | 1991-08-08 | 1997-07-08 | Santa Barbara Research Center | Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation |
CA2070708C (en) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface |
SE9301428D0 (sv) * | 1993-04-28 | 1993-04-28 | Tetra Laval Holdings & Finance Sa | Elektronaccelerator foer sterilisering av foerpackningsmaterial i en aseptisk foerpackningsmaskin |
US5424645A (en) * | 1993-11-18 | 1995-06-13 | Doty Scientific, Inc. | Doubly broadband triple resonance or quad resonance NMR probe circuit |
US6673438B1 (en) * | 1994-05-03 | 2004-01-06 | Cardinal Cg Company | Transparent article having protective silicon nitride film |
WO1995029883A1 (en) * | 1994-05-03 | 1995-11-09 | Cardinal Ig Company | Transparent article having protective silicon nitride film |
US6419742B1 (en) * | 1994-11-15 | 2002-07-16 | Texas Instruments Incorporated | method of forming lattice matched layer over a surface of a silicon substrate |
US5812405A (en) * | 1995-05-23 | 1998-09-22 | Viratec Thin Films, Inc. | Three variable optimization system for thin film coating design |
US5672243A (en) * | 1995-11-28 | 1997-09-30 | Mosel Vitelic, Inc. | Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide |
US6074730A (en) * | 1997-12-31 | 2000-06-13 | The Boc Group, Inc. | Broad-band antireflection coating having four sputtered layers |
KR100269330B1 (ko) * | 1998-06-29 | 2000-12-01 | 윤종용 | 반사 방지 캡 및 스페이서를 구비하는 반도체장치, 이의 제조방법 및 이를 이용한 포토레지스트 패턴의 제조방법 |
US6218719B1 (en) * | 1998-09-18 | 2001-04-17 | Capella Microsystems, Inc. | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
KR100636093B1 (ko) * | 1999-07-12 | 2006-10-19 | 삼성전자주식회사 | 광검출기 디바이스 및 그 제조방법 |
US20020020846A1 (en) * | 2000-04-20 | 2002-02-21 | Bo Pi | Backside illuminated photodiode array |
US6665116B1 (en) | 2000-07-10 | 2003-12-16 | Hrl Laboratories, Llc | Achromatic lens for millimeter-wave and infrared bands |
US6567211B1 (en) | 2000-07-10 | 2003-05-20 | Hrl Laboratories, Llc | Dual-band millimeter-wave and infrared anti-reflecting coatings |
US6589657B2 (en) | 2001-08-31 | 2003-07-08 | Von Ardenne Anlagentechnik Gmbh | Anti-reflection coatings and associated methods |
DE10342501A1 (de) * | 2003-09-12 | 2005-05-04 | Zeiss Carl Smt Ag | Lichtdetektor mit erhöhter Quanteneffizienz |
JP4250630B2 (ja) * | 2003-11-11 | 2009-04-08 | 日本碍子株式会社 | 光素子及び光モジュール |
JP4570152B2 (ja) * | 2005-06-01 | 2010-10-27 | 国立大学法人電気通信大学 | 透明導電性成形物及びその製造方法 |
US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
US8574710B2 (en) * | 2008-10-10 | 2013-11-05 | Nano Terra Inc. | Anti-reflective coatings comprising ordered layers of nanowires and methods of making and using the same |
GB2475086B (en) * | 2009-11-05 | 2014-02-05 | Cmosis Nv | Backside illuminated image sensor |
US8927934B2 (en) * | 2010-09-13 | 2015-01-06 | Ricoh Company, Ltd. | Thermal infrared sensor and manufacturing method thereof |
WO2016059843A1 (ja) * | 2014-10-16 | 2016-04-21 | 凸版印刷株式会社 | 量子ドット保護フィルム、それを用いた量子ドットフィルム及びバックライトユニット |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1136218A (en) * | 1965-12-14 | 1968-12-11 | Standard Telephones Cables Ltd | Improvements in or relating to the manufacture of semiconductor optical devices |
US3463574A (en) * | 1967-06-26 | 1969-08-26 | Perkin Elmer Corp | Multilayer antireflection coating for low index materials |
CH557546A (de) * | 1972-10-19 | 1974-12-31 | Balzers Patent Beteilig Ag | Aus einer mehrzahl von einfachen oder zusammengesetzen (lambda)/4-schichten bestehender reflexionsvermindernder belag. |
JPS57155785A (en) * | 1981-03-23 | 1982-09-25 | Toshiba Corp | Semiconductor photo-receiving element photodetector |
US4528418A (en) * | 1984-02-24 | 1985-07-09 | Energy Conversion Devices, Inc. | Photoresponsive semiconductor device having a double layer anti-reflective coating |
DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
US5086328A (en) * | 1988-02-08 | 1992-02-04 | Santa Barbara Research Center | Photo-anodic oxide surface passivation for semiconductors |
JPH025687A (ja) * | 1988-06-22 | 1990-01-10 | Toshiba Glass Co Ltd | イメージセンサ用前面ガラス |
-
1992
- 1992-08-21 US US07/934,136 patent/US5262633A/en not_active Expired - Lifetime
-
1993
- 1993-08-09 IL IL10663893A patent/IL106638A/en not_active IP Right Cessation
- 1993-08-19 DE DE69308686T patent/DE69308686T2/de not_active Expired - Fee Related
- 1993-08-19 EP EP93306566A patent/EP0585055B1/de not_active Expired - Lifetime
- 1993-08-19 ES ES93306566T patent/ES2101235T3/es not_active Expired - Lifetime
- 1993-08-23 JP JP5208018A patent/JPH0732258B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016002597A1 (de) | 2016-03-04 | 2017-09-07 | Optics Balzers Ag | Breitbandentspiegelung für den NlR-Bereich |
Also Published As
Publication number | Publication date |
---|---|
EP0585055B1 (de) | 1997-03-12 |
IL106638A (en) | 1996-10-31 |
ES2101235T3 (es) | 1997-07-01 |
DE69308686D1 (de) | 1997-04-17 |
US5262633A (en) | 1993-11-16 |
EP0585055A1 (de) | 1994-03-02 |
JPH06188439A (ja) | 1994-07-08 |
IL106638A0 (en) | 1994-08-26 |
JPH0732258B2 (ja) | 1995-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |