IE35063L - Semiconductor preform - Google Patents

Semiconductor preform

Info

Publication number
IE35063L
IE35063L IE47371A IE47371A IE35063L IE 35063 L IE35063 L IE 35063L IE 47371 A IE47371 A IE 47371A IE 47371 A IE47371 A IE 47371A IE 35063 L IE35063 L IE 35063L
Authority
IE
Ireland
Prior art keywords
preform
wafer
passivant
polymeric
contact
Prior art date
Application number
IE47371A
Other versions
IE35063B1 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE35063L publication Critical patent/IE35063L/en
Publication of IE35063B1 publication Critical patent/IE35063B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

1356157 Semi-conductor devices GENERAL ELECTRIC CO 24 May 1971 [22 May 1970] 16756/71 Heading H1K A semi-conductor device comprises a wafer having ohmic contacts associated with opposite major faces, an insulating preform peripherally encompassing the wafer, the preform and one contact having spaced approximately conforming surfaces and a layer of polymeric passivant interposed between and bonded to the peripheral edge of the wafer and the approximately conforming surfaces of the contact and preform. In a first embodiment, Fig. 1 (not shown), a diode is provided with contact layers by sputtering, vapour plating or electroless plating and coextensive electrodes are secured. A cylindrical preform of glass or glazed ceramic is fitted round the assembly and secured by a layer of polymeric passivant, e.g. a silicone resin or rubber, epoxy resin, polyimide or fluorocarbon polymer. The electrodes may be of Cu soft soldered or of W or Mo hard soldered to the diode which may be of Ge or Si. In a second embodiment, Fig. 2, a diode is provided with W or Mo contact plates 216 and terminal members 212, 214 which have pedestals which contact plates 216. A layer of Au or other malleable metal can be inserted between the contact plates and the pedestals. Each contact plate may be bonded to the wafer or pedestal but not both, or may not be bonded. A preform 224 surrounds the wafer, contact plates, and pedestals, the assembly is inserted in a mould under pressure and polymeric passivant is injected into the space between the preform and the other components through a sprue 226 to form the bonding layer 222. In a further embodiment, Fig. 3 (not shown), an SCR having a double bevelled edge is arranged between two main terminal members, the member contacting the larger face extending past the edge of the wafer, and a preform is fitted round the wafer and smaller terminal and bonded by a layer of polymeric passivant. The gate contact extends through an aperture in one main electrode and is insulated by polymeric passivant or by a small preform secured to the main electrode and wafer by a layer or polymeric passivant. The semi-conductor diode may also be a Schottky diode or a transistor. [GB1356157A]
IE47371A 1970-05-22 1971-04-16 Semiconductor device with polymeric passivant bonded preform IE35063B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3965070A 1970-05-22 1970-05-22

Publications (2)

Publication Number Publication Date
IE35063L true IE35063L (en) 1971-11-22
IE35063B1 IE35063B1 (en) 1975-10-29

Family

ID=21906611

Family Applications (1)

Application Number Title Priority Date Filing Date
IE47371A IE35063B1 (en) 1970-05-22 1971-04-16 Semiconductor device with polymeric passivant bonded preform

Country Status (4)

Country Link
DE (2) DE2125106A1 (en)
FR (1) FR2090206A1 (en)
GB (1) GB1356157A (en)
IE (1) IE35063B1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754043B2 (en) * 1973-05-21 1982-11-16
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
DE4040753A1 (en) * 1990-12-19 1992-06-25 Siemens Ag PERFORMANCE SEMICONDUCTOR COMPONENT
DE102009017732A1 (en) * 2009-04-11 2010-10-21 Semikron Elektronik Gmbh & Co. Kg Power semiconductor component with an edge passivation and method for its production
CN104124215B (en) * 2014-06-26 2017-02-15 江苏省宜兴电子器件总厂 Packaging structure and packaging technology capable of synchronously completing welding, bonding and sealing

Also Published As

Publication number Publication date
GB1356157A (en) 1974-06-12
DE2125106A1 (en) 1971-12-02
DE7119711U (en) 1972-02-03
FR2090206A1 (en) 1972-01-14
IE35063B1 (en) 1975-10-29

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