IE33343B1 - Metallic contact for semi-conductor devices - Google Patents

Metallic contact for semi-conductor devices

Info

Publication number
IE33343B1
IE33343B1 IE1410/69A IE141069A IE33343B1 IE 33343 B1 IE33343 B1 IE 33343B1 IE 1410/69 A IE1410/69 A IE 1410/69A IE 141069 A IE141069 A IE 141069A IE 33343 B1 IE33343 B1 IE 33343B1
Authority
IE
Ireland
Prior art keywords
layer
aluminium
gold
silver
semi
Prior art date
Application number
IE1410/69A
Other languages
English (en)
Other versions
IE33343L (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE33343L publication Critical patent/IE33343L/xx
Publication of IE33343B1 publication Critical patent/IE33343B1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
IE1410/69A 1968-11-25 1969-10-13 Metallic contact for semi-conductor devices IE33343B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77864768A 1968-11-25 1968-11-25

Publications (2)

Publication Number Publication Date
IE33343L IE33343L (en) 1970-05-25
IE33343B1 true IE33343B1 (en) 1974-05-29

Family

ID=25114010

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1410/69A IE33343B1 (en) 1968-11-25 1969-10-13 Metallic contact for semi-conductor devices

Country Status (8)

Country Link
US (1) US3599060A (enExample)
BE (1) BE740431A (enExample)
DE (1) DE1958684A1 (enExample)
FR (1) FR2024203A1 (enExample)
GB (1) GB1286834A (enExample)
IE (1) IE33343B1 (enExample)
NL (1) NL6917686A (enExample)
SE (1) SE363192B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
DE3011660A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mehrschichtiger ohmscher anschlusskontakt
EP0076856A4 (en) * 1981-04-21 1984-03-01 Seiichiro Aigoo METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH A PROJECTED PLATED ELECTRODE.
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
DE3781861T2 (de) * 1986-10-27 1993-04-01 Electric Power Res Inst Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern.
US5206186A (en) * 1990-10-26 1993-04-27 General Electric Company Method for forming semiconductor electrical contacts using metal foil and thermocompression bonding
US5184206A (en) * 1990-10-26 1993-02-02 General Electric Company Direct thermocompression bonding for thin electronic power chips
KR960008558B1 (en) * 1993-03-02 1996-06-28 Samsung Electronics Co Ltd Low resistance contact structure and manufacturing method of high integrated semiconductor device
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US5989993A (en) * 1996-02-09 1999-11-23 Elke Zakel Method for galvanic forming of bonding pads
US6115281A (en) * 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
US6737353B2 (en) * 2001-06-19 2004-05-18 Advanced Semiconductor Engineering, Inc. Semiconductor device having bump electrodes
JP2003059860A (ja) * 2001-08-13 2003-02-28 Mitsubishi Electric Corp 半導体装置
US6586043B1 (en) 2002-01-09 2003-07-01 Micron Technology, Inc. Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps
US6825564B2 (en) 2002-08-21 2004-11-30 Micron Technology, Inc. Nickel bonding cap over copper metalized bondpads
JP7075847B2 (ja) * 2018-08-28 2022-05-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
CN115394864A (zh) * 2022-03-11 2022-11-25 浙江爱旭太阳能科技有限公司 太阳能电池的导电接触结构、组件及发电系统
CN114335257B (zh) * 2022-03-11 2022-08-19 浙江爱旭太阳能科技有限公司 太阳能电池的制备方法及太阳能电池组件、发电系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1011317A (fr) * 1949-01-17 1952-06-23 Westinghouse Freins & Signaux Perfectionnements aux procédés de fabrication des cellules photo-électriques à couche d'arrêt et produits industriels nouveaux obtenus
GB1053069A (enExample) * 1963-06-28
BE670213A (enExample) * 1964-09-30 1900-01-01
US3458925A (en) * 1966-01-20 1969-08-05 Ibm Method of forming solder mounds on substrates
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors

Also Published As

Publication number Publication date
US3599060A (en) 1971-08-10
BE740431A (enExample) 1970-04-17
SE363192B (enExample) 1974-01-07
GB1286834A (en) 1972-08-23
DE1958684A1 (de) 1970-06-18
IE33343L (en) 1970-05-25
NL6917686A (enExample) 1970-05-27
FR2024203A1 (enExample) 1970-08-28

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