HRP20141036T1 - Metoda za proizvodnju solarne stanice s površinskim dielektriäśnim dvoslojem koji smanjuje reaktivnost, i odgovarajuä†e solarne stanice - Google Patents
Metoda za proizvodnju solarne stanice s površinskim dielektriäśnim dvoslojem koji smanjuje reaktivnost, i odgovarajuä†e solarne stanice Download PDFInfo
- Publication number
- HRP20141036T1 HRP20141036T1 HRP20141036AT HRP20141036T HRP20141036T1 HR P20141036 T1 HRP20141036 T1 HR P20141036T1 HR P20141036A T HRP20141036A T HR P20141036AT HR P20141036 T HRP20141036 T HR P20141036T HR P20141036 T1 HRP20141036 T1 HR P20141036T1
- Authority
- HR
- Croatia
- Prior art keywords
- dielectric layer
- solar cell
- silicon
- silicon substrate
- deposited
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims 10
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 229910000091 aluminium hydride Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Claims (13)
1. Metoda za stvaranje silikonske solarne stanice, obuhvaća sljedeće korake:
priprema silikonskog supstrata (1);
odlaganje prvog dielektričnog sloja (3) na površinu silikonskog supstrata pomoću odlaganja atomskog sloja, pri čemu prvi dielektrični sloj obuhvaća aluminijev oksid;
karakteriziran
odlaganjem drugog dielektričnog sloja (5) na površinu prvog dielektričnog sloja (3), pri čemu se materijali prvog i drugog dielektričnog sloja razlikuju i pri čemu je vodik uključen u drugi dielektrični sloj.
2. Metoda u skladu s patentnim zahtjevom 1, pri čemu je za odlaganje prvog dielektričnog sloja, silikonski supstrat najprije ispran s tvari koja sadrži aluminij koja obuhvaća barem jednu od komponenata Al(CH3)3, AlCl3, Al(CH3)2 i (CH3)2(C2H5)N:AlH3, tako da je sloj koji sadrži aluminij odložen na površinu silikonskog supstrata, i pri čemu je sloj koji sadrži aluminij zatim oksidiran u atmosferi koja sadrži kisik.
3. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 ili 2, pri čemu drugi dielektrični sloj obuhvaća materijal odabran iz grupe koja se sastoji nitrida silikona, oksida silikona i karbida silikona.
4. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 do 3, pri čemu je drugi dielektrični sloj proizveden koristeći PECVD metodu.
5. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 do 4, pri čemu je drugi dielektrični sloj odložen tako da ima sadržaj vodika najmanje 1 u%, poželjno najmanje 2 u% i još poželjnije najmanje 5 u%.
6. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 do 5, pri čemu se, nakon odlaganja drugog dielektričnog sloja, provodi korak visoke temperature na temperaturama iznad 600°C, poželjno iznad 700°C i još poželjnije iznad 800°C.
7. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 do 6, pri čemu je prvi dielektrični sloj odložen s debljinom manjom od 50 nm, poželjno manjom od 30 nm i još poželjnije manjom od 10 nm.
8. Metoda u skladu s bilo kojim od patentnih zahtjeva 1 do 7, pri čemu je drugi dielektrični sloj odložen s debljinom većom od 50 nm, poželjno većom od 100 nm i još poželjnije većom od 150 nm.
9. Solarna stanica obuhvaća:
silikonski supstrat (1);
prvi dielektrični sloj (3) koji obuhvaća aluminijev oksid na površini silikonskog supstrata (1);
karakteriziran
drugim dielektričnim slojem (5) na površini prvog dielektričnog sloja (3), pri čemu se materijali prvog i drugog dielektričnog sloja razlikuju i pri čemu je vodik uključen u drugi dielektrični sloj.
10. Solarna stanica u skladu s patentnim zahtjevom 9, pri čemu je prvi dielektrični sloj odložen pomoću odlaganja atomskog sloja tako da je značajno atomski zbijen na atomskoj skali.
11. Solarna stanica u skladu s patentnim zahtjevom 9 ili 10, pri čemu drugi je dielektrični sloj odabran iz grupe koja se sastoji nitrida silikona, oksida silikona i karbida silikona.
12. Solarna stanica u skladu s bilo kojim od patentnih zahtjeva 9 do 11, pri čemu prvi dielektrični sloj ima debljinu manju od 50 nm, poželjno manju od 30 nm i još poželjnije manju od 10 nm.
13. Solarna stanica u skladu s bilo kojim od patentnih zahtjeva 9 do 12, pri čemu drugi dielektrični sloj ima debljinu veću od 50 nm, poželjno veću od 100 nm i još poželjnije veću od 150 nm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007054384A DE102007054384A1 (de) | 2007-11-14 | 2007-11-14 | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
| PCT/EP2008/065067 WO2009062882A2 (de) | 2007-11-14 | 2008-11-06 | Verfahren zum herstellen einer solarzelle mit einer oberflächenpassivierenden dielektrikumdoppelschicht und entsprechende solarzelle |
| EP08850615.9A EP2220689B1 (de) | 2007-11-14 | 2008-11-06 | Verfahren zum herstellen einer solarzelle mit einer oberflächenpassivierenden dielektrikumdoppelschicht und entsprechende solarzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HRP20141036T1 true HRP20141036T1 (hr) | 2015-01-30 |
Family
ID=40560664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HRP20141036AT HRP20141036T1 (hr) | 2007-11-14 | 2014-10-27 | Metoda za proizvodnju solarne stanice s površinskim dielektriäśnim dvoslojem koji smanjuje reaktivnost, i odgovarajuä†e solarne stanice |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9893215B2 (hr) |
| EP (1) | EP2220689B1 (hr) |
| CN (1) | CN101952971B (hr) |
| AU (1) | AU2008323025C1 (hr) |
| DE (1) | DE102007054384A1 (hr) |
| ES (1) | ES2523441T3 (hr) |
| HR (1) | HRP20141036T1 (hr) |
| MY (1) | MY152398A (hr) |
| PT (1) | PT2220689E (hr) |
| WO (1) | WO2009062882A2 (hr) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10239845C1 (de) | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
| DE102007054384A1 (de) | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
| BRPI0822954A2 (pt) | 2008-07-28 | 2015-06-23 | Day4 Energy Inc | Célula fotovoltaica de silício cristalino com emissor seletivo produzida com processo de retroataque de precisão em baixa temperatura e de passivação |
| DE102009025977A1 (de) | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
| EP3770974A1 (en) * | 2009-09-18 | 2021-01-27 | Shin-Etsu Chemical Co., Ltd. | Solar cell, method for manufacturing solar cell, and solar cell module |
| US20110100412A1 (en) * | 2009-10-30 | 2011-05-05 | International Business Machines Corporation | Method of manufacturing photovoltaic modules |
| EP2339648A1 (en) * | 2009-12-23 | 2011-06-29 | Applied Materials, Inc. | Enhanced passivation layer for wafer based solar cells, method and system for manufacturing thereof |
| DE102010016122A1 (de) | 2010-03-24 | 2011-09-29 | Q-Cells Se | Herstellungsverfahren einer Halbleitersolarzelle |
| JP2013524510A (ja) * | 2010-03-30 | 2013-06-17 | アプライド マテリアルズ インコーポレイテッド | ｐ型拡散層の上に負荷電パッシベーション層を形成する方法 |
| FI20105498A0 (fi) * | 2010-05-10 | 2010-05-10 | Beneq Oy | Menetelmä kerroksen valmistamiseksi ja silikonisubstraatin pinnalla oleva kerros |
| DE102010017155B4 (de) | 2010-05-31 | 2012-01-26 | Q-Cells Se | Solarzelle |
| DE102010040110A1 (de) * | 2010-09-01 | 2012-03-01 | Robert Bosch Gmbh | Solarzelle und Verfahren zur Herstellung einer solchen |
| EP2426233B1 (en) * | 2010-09-03 | 2013-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications |
| US9165971B2 (en) * | 2010-10-25 | 2015-10-20 | California Institute Of Technology | Atomically precise surface engineering for producing imagers |
| US20120108079A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making |
| CN102064237A (zh) * | 2010-11-29 | 2011-05-18 | 奥特斯维能源（太仓）有限公司 | 一种用于晶体硅太阳电池的双层钝化方法 |
| KR20120084104A (ko) | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | 태양전지 |
| EP2490268A1 (en) * | 2011-02-03 | 2012-08-22 | Imec | Method for fabricating photovoltaic cells |
| TWI495120B (zh) * | 2011-02-09 | 2015-08-01 | Sino American Silicon Prod Inc | 光電元件及其製造方法 |
| FI20115534A0 (fi) * | 2011-05-30 | 2011-05-30 | Beneq Oy | Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi |
| EP2533305A3 (en) * | 2011-06-06 | 2014-05-21 | Imec | Method for blister-free passivation of a silicon surface |
| JP5323898B2 (ja) * | 2011-08-01 | 2013-10-23 | シャープ株式会社 | 液体吐出ノズル、及び液体吐出ノズルにおける撥水層の再生方法 |
| CN102403369A (zh) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | 一种用于太阳能电池的钝化介质膜 |
| KR20130050721A (ko) | 2011-11-08 | 2013-05-16 | 삼성에스디아이 주식회사 | 태양 전지 |
| FI20116217A (fi) * | 2011-12-02 | 2013-06-03 | Beneq Oy | Piitä sisältävä n-tyypin aurinkokennopari |
| DE102012201953A1 (de) | 2012-02-09 | 2013-08-14 | Singulus Technologies Ag | Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht |
| KR101894585B1 (ko) * | 2012-02-13 | 2018-09-04 | 엘지전자 주식회사 | 태양전지 |
| CN104094418A (zh) * | 2012-02-17 | 2014-10-08 | 应用材料公司 | 硅基太阳能电池的钝化薄膜堆叠 |
| FI20125987A (fi) | 2012-09-24 | 2014-03-25 | Optitune Oy | Menetelmä valosähköisessä laitteessa käytettävän piisubstraatin passivoimiseksi |
| KR101889775B1 (ko) | 2012-09-27 | 2018-08-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| WO2015081077A1 (en) * | 2013-11-26 | 2015-06-04 | Arizona Board Of Regents On Behalf Of Arizona State University | Solar cells formed via aluminum electroplating |
| KR101867855B1 (ko) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
| NL2013298B1 (en) * | 2014-08-04 | 2016-09-21 | Asm Int Nv | A Photovoltaic cell with a passivation layer as well as a method for manufacturing such a photovoltaic cell. |
| CN104701390B (zh) * | 2015-03-10 | 2017-01-25 | 北京飞行博达电子有限公司 | 太阳能电池背面钝化方法 |
| CN105576083A (zh) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 |
| CN106876523B (zh) * | 2017-03-01 | 2018-05-11 | 南开大学 | 一种表面过饱和掺杂光电探测器的钝化方法 |
| DE102018114800A1 (de) | 2018-06-20 | 2019-12-24 | Hanwha Q Cells Gmbh | Monofazial-Solarzelle, Solarmodul und Herstellungsverfahren für eine Monofazial-Solarzelle |
| CN110047950A (zh) * | 2019-05-22 | 2019-07-23 | 通威太阳能（安徽）有限公司 | 一种具有钝化层结构的太阳电池及其制备方法 |
| CN113097341B (zh) * | 2021-03-31 | 2023-10-31 | 通威太阳能（安徽）有限公司 | 一种PERC电池、其AlOx镀膜工艺、多层AlOx背钝化结构及方法 |
| CN113322451B (zh) * | 2021-05-28 | 2022-07-12 | 横店集团东磁股份有限公司 | 一种perc电池的氧化铝钝化膜及其沉积方法和应用 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58128775A (ja) | 1982-01-28 | 1983-08-01 | Toshiba Corp | 太陽電池の製造方法 |
| JPS60208813A (ja) | 1984-04-02 | 1985-10-21 | Mitsubishi Electric Corp | 光電変換装置とその製造方法 |
| US5057163A (en) | 1988-05-04 | 1991-10-15 | Astropower, Inc. | Deposited-silicon film solar cell |
| EP0856877A1 (en) * | 1997-01-31 | 1998-08-05 | Texas Instruments Incorporated | Process for forming integrated circuits using multistep plasma etching |
| CN1192427C (zh) | 1999-08-25 | 2005-03-09 | 因芬尼昂技术股份公司 | 制造具有至少一个金属化平面的集成电路的方法 |
| TW548239B (en) * | 2000-10-23 | 2003-08-21 | Asm Microchemistry Oy | Process for producing aluminium oxide films at low temperatures |
| US7476420B2 (en) | 2000-10-23 | 2009-01-13 | Asm International N.V. | Process for producing metal oxide films at low temperatures |
| KR100498467B1 (ko) * | 2002-12-05 | 2005-07-01 | 삼성전자주식회사 | 배기 경로에서의 파우더 생성을 방지할 수 있는 원자층증착 장비 |
| JP2004193350A (ja) | 2002-12-11 | 2004-07-08 | Sharp Corp | 太陽電池セルおよびその製造方法 |
| US7553686B2 (en) | 2002-12-17 | 2009-06-30 | The Regents Of The University Of Colorado, A Body Corporate | Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices |
| EP1634323A4 (en) | 2003-06-13 | 2008-06-04 | Univ North Carolina State | COMPLEX OXIDES FOR USE IN SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS |
| US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
| US7537024B2 (en) * | 2003-07-29 | 2009-05-26 | Societe Bic | Fuel cartridge with connecting valve |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| GB0415618D0 (en) | 2004-07-13 | 2004-08-18 | Rolls Royce Plc | Aircraft takeoff |
| JP4540447B2 (ja) * | 2004-10-27 | 2010-09-08 | シャープ株式会社 | 太陽電池および太陽電池の製造方法 |
| US7687402B2 (en) | 2004-11-15 | 2010-03-30 | Micron Technology, Inc. | Methods of making optoelectronic devices, and methods of making solar cells |
| US7554031B2 (en) | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
| EP1763086A1 (en) | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method |
| US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
| NL1030200C2 (nl) * | 2005-10-14 | 2007-04-17 | Stichting Energie | Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen. |
| JP2007134424A (ja) | 2005-11-09 | 2007-05-31 | Sony Corp | 半導体装置の製造方法および半導体装置 |
| FR2906404B1 (fr) * | 2006-09-21 | 2008-12-19 | Commissariat Energie Atomique | Procede de metallisation de cellules photovoltaiques a multiples recuits |
| EP2087527A1 (en) | 2006-12-01 | 2009-08-12 | Sharp Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| DE102007054384A1 (de) | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
-
2007
- 2007-11-14 DE DE102007054384A patent/DE102007054384A1/de not_active Withdrawn
-
2008
- 2008-11-06 AU AU2008323025A patent/AU2008323025C1/en active Active
- 2008-11-06 EP EP08850615.9A patent/EP2220689B1/de active Active
- 2008-11-06 US US12/742,818 patent/US9893215B2/en active Active
- 2008-11-06 CN CN2008801247790A patent/CN101952971B/zh not_active Ceased
- 2008-11-06 WO PCT/EP2008/065067 patent/WO2009062882A2/de active Application Filing
- 2008-11-06 ES ES08850615.9T patent/ES2523441T3/es active Active
- 2008-11-06 MY MYPI20102263 patent/MY152398A/en unknown
- 2008-11-06 PT PT88506159T patent/PT2220689E/pt unknown
-
2014
- 2014-10-27 HR HRP20141036AT patent/HRP20141036T1/hr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2008323025A1 (en) | 2009-05-22 |
| US9893215B2 (en) | 2018-02-13 |
| ES2523441T3 (es) | 2014-11-26 |
| PT2220689E (pt) | 2014-11-24 |
| EP2220689B1 (de) | 2014-08-27 |
| CN101952971B (zh) | 2012-07-18 |
| AU2008323025B2 (en) | 2014-03-13 |
| WO2009062882A2 (de) | 2009-05-22 |
| MY152398A (en) | 2014-09-15 |
| EP2220689A2 (de) | 2010-08-25 |
| US20100263725A1 (en) | 2010-10-21 |
| CN101952971A (zh) | 2011-01-19 |
| DE102007054384A1 (de) | 2009-05-20 |
| WO2009062882A3 (de) | 2010-07-08 |
| AU2008323025C1 (en) | 2020-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HRP20141036T1 (hr) | Metoda za proizvodnju solarne stanice s površinskim dielektriäśnim dvoslojem koji smanjuje reaktivnost, i odgovarajuä†e solarne stanice | |
| Kanai et al. | Annealing temperature dependence of photovoltaic properties of solar cells containing Cu2SnS3 thin films produced by co‐evaporation | |
| Kessler et al. | Technological aspects of flexible CIGS solar cells and modules | |
| WO2005089330A3 (en) | Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton | |
| TW200741865A (en) | Materials and methods of forming controlled void | |
| JP2010512647A5 (hr) | ||
| Lee et al. | Robust nanoscale contact of silver nanowire electrodes to semiconductors to achieve high performance chalcogenide thin film solar cells | |
| KR102197243B1 (ko) | 적층체 및 가스 배리어 필름 | |
| CN106848092B (zh) | 有机发光二极管装置及其制作方法 | |
| Li et al. | Synthesis of Ti–Al–Si–N nanocomposite films using liquid injection PECVD from alkoxide precursors | |
| Fraga et al. | Effect of alkali doping on CIGS photovoltaic ceramic tiles | |
| Siol et al. | PVD of copper sulfide (Cu2S) for PIN-structured solar cells | |
| Mohammed et al. | Thickness effect of Al2O3 as buffer layer on Alq3 sensitivity for toxic gas | |
| Nath et al. | Role of electrodes on perovskite solar cells performance: A review | |
| Fritsche et al. | Interface modification of CdTe thin film solar cells by CdCl2-activation | |
| Zhao et al. | Alumina composite coatings with enhanced high-temperature electrical insulating properties on Ni-based superalloy substrates | |
| Choe et al. | Rapid large-grain (> 100 μm) formation of organic-inorganic perovskite thin films via shear deposition for photovoltaic application | |
| Tang et al. | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application | |
| Hafezian et al. | Degradation mechanism of protected ultrathin silver films and the effect of the seed layer | |
| Xue et al. | Preparation and spectral properties of solar selective absorbing MoSi2–Al2O3 coating | |
| Yan et al. | Si–Mo–SiO2 oxidation protective coatings prepared by slurry painting for C/C–SiC composites | |
| JP2010225883A (ja) | 薄膜太陽電池の製造方法 | |
| WO2017206137A1 (zh) | 一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 | |
| CN105671619A (zh) | 使用电泳沉积形成制品的方法及相关的制品 | |
| CN103222068A (zh) | 太阳能电池及其制造方法 |