FI20115534A0 - Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi - Google Patents

Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi

Info

Publication number
FI20115534A0
FI20115534A0 FI20115534A FI20115534A FI20115534A0 FI 20115534 A0 FI20115534 A0 FI 20115534A0 FI 20115534 A FI20115534 A FI 20115534A FI 20115534 A FI20115534 A FI 20115534A FI 20115534 A0 FI20115534 A0 FI 20115534A0
Authority
FI
Finland
Prior art keywords
protecting
passivating layer
passivating
layer
Prior art date
Application number
FI20115534A
Other languages
English (en)
Swedish (sv)
Inventor
Jarmo Skarp
Arto Pakkala
Sampo Ahonen
Sami Sneck
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20115534A priority Critical patent/FI20115534A0/fi
Publication of FI20115534A0 publication Critical patent/FI20115534A0/fi
Priority to PCT/FI2012/050514 priority patent/WO2012164163A1/en
Priority to TW101119282A priority patent/TW201308633A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Formation Of Insulating Films (AREA)
FI20115534A 2011-05-30 2011-05-30 Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi FI20115534A0 (fi)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FI20115534A FI20115534A0 (fi) 2011-05-30 2011-05-30 Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi
PCT/FI2012/050514 WO2012164163A1 (en) 2011-05-30 2012-05-28 A method and a structure for protecting a passivating layer
TW101119282A TW201308633A (zh) 2011-05-30 2012-05-30 保護鈍化層之方法及結構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20115534A FI20115534A0 (fi) 2011-05-30 2011-05-30 Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi

Publications (1)

Publication Number Publication Date
FI20115534A0 true FI20115534A0 (fi) 2011-05-30

Family

ID=44071658

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115534A FI20115534A0 (fi) 2011-05-30 2011-05-30 Menetelmä ja rakenne passivoivan kerroksen suojaamiseksi

Country Status (3)

Country Link
FI (1) FI20115534A0 (fi)
TW (1) TW201308633A (fi)
WO (1) WO2012164163A1 (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014014108A1 (ja) 2012-07-19 2014-01-23 日立化成株式会社 パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法及び太陽電池
TW201511300A (zh) * 2013-09-11 2015-03-16 Inst Nuclear Energy Res Atomic Energy Council 具有摻雜矽或硼原子之鋁金屬電極之製備方法
CN109148643B (zh) * 2018-08-06 2021-02-09 横店集团东磁股份有限公司 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法
CN110047950A (zh) * 2019-05-22 2019-07-23 通威太阳能（安徽）有限公司 一种具有钝化层结构的太阳电池及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420279B1 (en) * 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US7507629B2 (en) * 2004-09-10 2009-03-24 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
DE102007054384A1 (de) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
US20110083735A1 (en) * 2009-10-13 2011-04-14 Ips Ltd. Solar cell and method of fabricating the same

Also Published As

Publication number Publication date
WO2012164163A1 (en) 2012-12-06
TW201308633A (zh) 2013-02-16

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Legal Events

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FD Application lapsed