HK78291A - Negative photoresist systems - Google Patents

Negative photoresist systems

Info

Publication number
HK78291A
HK78291A HK782/91A HK78291A HK78291A HK 78291 A HK78291 A HK 78291A HK 782/91 A HK782/91 A HK 782/91A HK 78291 A HK78291 A HK 78291A HK 78291 A HK78291 A HK 78291A
Authority
HK
Hong Kong
Prior art keywords
film
photoresist
polyglutarimide
negative
sub
Prior art date
Application number
HK782/91A
Other languages
German (de)
English (en)
French (fr)
Inventor
Palaiyur Sundarappier Kalyanaraman
Original Assignee
Rohm And Haas Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm And Haas Company filed Critical Rohm And Haas Company
Publication of HK78291A publication Critical patent/HK78291A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00Photographic processes or agents therefor; Regeneration of such processing agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/008Azides
    • G03F7/0085Azides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/128Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
HK782/91A 1984-01-16 1991-10-03 Negative photoresist systems HK78291A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/571,053 US4569897A (en) 1984-01-16 1984-01-16 Negative photoresist compositions with polyglutarimide polymer

Publications (1)

Publication Number Publication Date
HK78291A true HK78291A (en) 1991-10-11

Family

ID=24282141

Family Applications (1)

Application Number Title Priority Date Filing Date
HK782/91A HK78291A (en) 1984-01-16 1991-10-03 Negative photoresist systems

Country Status (14)

Country Link
US (1) US4569897A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0149553B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS60159744A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR870000678B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE63647T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU581199B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR8500146A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1272059A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3582807D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
HK (1) HK78291A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IL (1) IL74073A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MY (1) MY103325A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
PH (1) PH21005A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ZA (1) ZA85320B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4636532A (en) * 1985-10-11 1987-01-13 Shipley Company Inc. Method for preparing polyglutarimide having a lower molecular weight and a low polydispersity
US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4912018A (en) * 1986-02-24 1990-03-27 Hoechst Celanese Corporation High resolution photoresist based on imide containing polymers
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
JPS6344648A (ja) * 1986-08-12 1988-02-25 Matsushita Electric Ind Co Ltd パタ−ン形成用コントラストエンハンスト材料
US5081001A (en) * 1987-05-22 1992-01-14 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4962171A (en) * 1987-05-22 1990-10-09 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4814258A (en) * 1987-07-24 1989-03-21 Motorola Inc. PMGI bi-layer lift-off process
KR100211546B1 (ko) * 1996-10-24 1999-08-02 김영환 신규한 포토레지스트용 공중합체
US6495311B1 (en) 2000-03-17 2002-12-17 International Business Machines Corporation Bilayer liftoff process for high moment laminate
US6395449B1 (en) * 2000-03-31 2002-05-28 Microchem Corp. Poly-hydroxy aromatic dissolution modifiers for lift-off resists
WO2010132284A1 (en) * 2009-05-13 2010-11-18 The Trustees Of The University Of Pennsylvania Photolithographically defined contacts to carbon nanostructures
US20140206185A1 (en) * 2011-12-21 2014-07-24 Ming Lei Ball placement in a photo-patterned template for fine pitch interconnect

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB763288A (en) * 1954-06-16 1956-12-12 Kodak Ltd Improvements in photo mechanical processes and materials therefor
US2852379A (en) * 1955-05-04 1958-09-16 Eastman Kodak Co Azide resin photolithographic composition
US3702766A (en) * 1971-01-29 1972-11-14 Eastman Kodak Co Photoresist compositions containing n-halo cyclic imides
GB1375461A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-05 1974-11-27
US4079041A (en) * 1975-06-18 1978-03-14 Ciba-Geigy Corporation Crosslinkable polymeric compounds
US3964908A (en) * 1975-09-22 1976-06-22 International Business Machines Corporation Positive resists containing dimethylglutarimide units
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
US4197133A (en) * 1977-10-14 1980-04-08 Ciba-Geigy Corporation Photo-curable compositions of matter containing bis-azidophthalimidyl derivatives
US4246374A (en) * 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
DE2919840A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer

Also Published As

Publication number Publication date
EP0149553A3 (en) 1987-07-01
JPH0523429B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-02
CA1272059A (en) 1990-07-31
BR8500146A (pt) 1985-08-20
JPS60159744A (ja) 1985-08-21
KR870000678B1 (ko) 1987-04-06
IL74073A (en) 1988-07-31
IL74073A0 (en) 1985-04-30
PH21005A (en) 1987-06-23
EP0149553B1 (en) 1991-05-15
AU3767085A (en) 1985-07-25
EP0149553A2 (en) 1985-07-24
ZA85320B (en) 1986-02-26
KR850005630A (ko) 1985-08-28
DE3582807D1 (de) 1991-06-20
ATE63647T1 (de) 1991-06-15
AU581199B2 (en) 1989-02-16
US4569897A (en) 1986-02-11
MY103325A (en) 1993-05-29

Similar Documents

Publication Publication Date Title
EP0149553B1 (en) Negative photoresist systems
US5037720A (en) Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
KR910007245B1 (ko) 양성 포토레지스트
EP0065352B1 (en) Light-sensitive polymer composition
US4880722A (en) Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
KR870000752B1 (ko) 포토레지스트 조성물, 감광요소 및 광화학적 영상체의 제조방법
EP0232973B1 (en) Microplastic structures, process for forming such structures, and photomask suitable for use in such process
EP0436457A2 (en) Photosensitive polyimide compositions
TW200426513A (en) Novel photosensitive resin compositions
US5104768A (en) Positive photoresist composition containing radiation sensitive quinonediazide compound and completely esterified polyamic acid polymer
US5059513A (en) Photochemical image process of positive photoresist element with maleimide copolymer
EP0704718B1 (en) Positive photosensitive composition for forming lenses
US4631249A (en) Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
US4942108A (en) Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
US5462840A (en) Use of poly(35-disubstituted 4-hydroxystyrene/N-substituted maleimide for forming a negative image
JPH06295063A (ja) 化学線感応性重合体組成物
EP0990949A1 (en) Negative photoresist composition
JP3093055B2 (ja) 耐熱性ネガ型フォトレジスト組成物および感光性基材、ならびにネガ型パターン形成方法
JP2981024B2 (ja) ポジ型感光性樹脂組成物
CN102301279B (zh) 正型感光性绝缘树脂组合物及使用该组合物的图形形成方法
JPH08123034A (ja) ポジ型感光性樹脂組成物
JPH03144648A (ja) 感光性樹脂組成物及びレジストの製造法
JPS6269262A (ja) 感光性組成物
JP3253193B2 (ja) ネガホトレジスト及びその製造方法
JP3163748B2 (ja) 化学線感応性重合体組成物

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)