HK56196A - Dynamic semiconductor store with read amplifier tuning circuit to obtain short access times at a low total peak current - Google Patents
Dynamic semiconductor store with read amplifier tuning circuit to obtain short access times at a low total peak currentInfo
- Publication number
- HK56196A HK56196A HK56196A HK56196A HK56196A HK 56196 A HK56196 A HK 56196A HK 56196 A HK56196 A HK 56196A HK 56196 A HK56196 A HK 56196A HK 56196 A HK56196 A HK 56196A
- Authority
- HK
- Hong Kong
- Prior art keywords
- bit line
- pct
- peak current
- total peak
- low total
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4029847 | 1990-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK56196A true HK56196A (en) | 1996-04-03 |
Family
ID=6414644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK56196A HK56196A (en) | 1990-09-20 | 1996-03-28 | Dynamic semiconductor store with read amplifier tuning circuit to obtain short access times at a low total peak current |
Country Status (9)
Country | Link |
---|---|
US (1) | US5293343A (ko) |
EP (1) | EP0549611B1 (ko) |
JP (1) | JP3255913B2 (ko) |
KR (1) | KR100200907B1 (ko) |
AT (1) | ATE107429T1 (ko) |
DE (1) | DE59101955D1 (ko) |
HK (1) | HK56196A (ko) |
TW (1) | TW212852B (ko) |
WO (1) | WO1992005558A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5870574A (en) * | 1993-04-12 | 1999-02-09 | Silicon Graphics, Inc. | System and method for fetching multiple groups of instructions from an instruction cache in a RISC processor system for execution during separate cycles |
US5568442A (en) * | 1993-05-17 | 1996-10-22 | Silicon Graphics, Inc. | RISC processor having improved instruction fetching capability and utilizing address bit predecoding for a segmented cache memory |
GB2286271B (en) * | 1994-01-31 | 1998-02-18 | Advanced Risc Mach Ltd | Data memory with sense amplifier |
JPH07334985A (ja) * | 1994-06-08 | 1995-12-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5586080A (en) * | 1995-06-26 | 1996-12-17 | Micron Technology, Inc. | Local word line phase driver |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0778993B2 (ja) * | 1985-11-05 | 1995-08-23 | 株式会社日立製作所 | 半導体メモリ |
US4780850A (en) * | 1986-10-31 | 1988-10-25 | Mitsubishi Denki Kabushiki Kaisha | CMOS dynamic random access memory |
US5189639A (en) * | 1987-11-26 | 1993-02-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having bit lines capable of partial operation |
US5023842A (en) * | 1988-07-11 | 1991-06-11 | Kabushiki Kaisha Toshiba | Semiconductor memory having improved sense amplifiers |
JPH0271493A (ja) * | 1988-09-06 | 1990-03-12 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JP2633645B2 (ja) * | 1988-09-13 | 1997-07-23 | 株式会社東芝 | 半導体メモリ装置 |
-
1991
- 1991-06-03 TW TW080104307A patent/TW212852B/zh not_active IP Right Cessation
- 1991-09-03 JP JP51385291A patent/JP3255913B2/ja not_active Expired - Fee Related
- 1991-09-03 KR KR1019930700824A patent/KR100200907B1/ko not_active IP Right Cessation
- 1991-09-03 DE DE59101955T patent/DE59101955D1/de not_active Expired - Fee Related
- 1991-09-03 WO PCT/DE1991/000697 patent/WO1992005558A1/de active IP Right Grant
- 1991-09-03 AT AT91915129T patent/ATE107429T1/de not_active IP Right Cessation
- 1991-09-03 US US07/988,956 patent/US5293343A/en not_active Expired - Lifetime
- 1991-09-03 EP EP91915129A patent/EP0549611B1/de not_active Expired - Lifetime
-
1996
- 1996-03-28 HK HK56196A patent/HK56196A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW212852B (ko) | 1993-09-11 |
EP0549611A1 (de) | 1993-07-07 |
WO1992005558A1 (de) | 1992-04-02 |
DE59101955D1 (de) | 1994-07-21 |
KR100200907B1 (ko) | 1999-06-15 |
EP0549611B1 (de) | 1994-06-15 |
US5293343A (en) | 1994-03-08 |
KR930702761A (ko) | 1993-09-09 |
ATE107429T1 (de) | 1994-07-15 |
JPH06500882A (ja) | 1994-01-27 |
JP3255913B2 (ja) | 2002-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |