JPS6476588A - Dynamic random access memory - Google Patents
Dynamic random access memoryInfo
- Publication number
- JPS6476588A JPS6476588A JP62234506A JP23450687A JPS6476588A JP S6476588 A JPS6476588 A JP S6476588A JP 62234506 A JP62234506 A JP 62234506A JP 23450687 A JP23450687 A JP 23450687A JP S6476588 A JPS6476588 A JP S6476588A
- Authority
- JP
- Japan
- Prior art keywords
- nmos
- voltage
- fet8
- mos fet
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dram (AREA)
Abstract
PURPOSE:To accelerate operating speed and to reduce power consumption by supplying a voltage which applies reverse bias on a MOS FET for switching to a word line not being selected. CONSTITUTION:An nMOS FET6 for clamping is set at an ON state when no word line 2 is selected, and a voltage held in a capacitor, for example, the voltage of -5V is supplied to the gate electrode of an nMOS FET8 for switching from the word line 2, which sets the nMOS FET8 at an OFF state. Thus, since the voltage which applies the reverse bias on the inverse of nMOS FET8 is supplied, it is possible to form the nMOS FET8 by the MOS FET with a low threshold voltage, and to form the MOS FET in a peripheral circuit by the MOS FET with the low threshold voltage. In such a way, the acceleration of the operation speed and the reduction of the power consumption can be realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62234506A JPS6476588A (en) | 1987-09-18 | 1987-09-18 | Dynamic random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62234506A JPS6476588A (en) | 1987-09-18 | 1987-09-18 | Dynamic random access memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476588A true JPS6476588A (en) | 1989-03-22 |
Family
ID=16972095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62234506A Pending JPS6476588A (en) | 1987-09-18 | 1987-09-18 | Dynamic random access memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476588A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154570A (en) * | 1989-09-06 | 1992-10-13 | Hitachi, Ltd. | Vertical shaft pump |
| US5299154A (en) * | 1991-07-02 | 1994-03-29 | Kabushiki Kaisha Toshiba | MOS semiconductor device with memory cells each having storage capacitor and transfer transistor |
| US6809953B2 (en) | 2001-12-20 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6052997A (en) * | 1983-09-02 | 1985-03-26 | Toshiba Corp | Semiconductor storage device |
| JPS60209996A (en) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | Semiconductor memory |
-
1987
- 1987-09-18 JP JP62234506A patent/JPS6476588A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6052997A (en) * | 1983-09-02 | 1985-03-26 | Toshiba Corp | Semiconductor storage device |
| JPS60209996A (en) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | Semiconductor memory |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154570A (en) * | 1989-09-06 | 1992-10-13 | Hitachi, Ltd. | Vertical shaft pump |
| US5299154A (en) * | 1991-07-02 | 1994-03-29 | Kabushiki Kaisha Toshiba | MOS semiconductor device with memory cells each having storage capacitor and transfer transistor |
| US6809953B2 (en) | 2001-12-20 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof |
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