HK1211384A1 - 具有冷卻特徵的傳感器封裝和製造其的方法 - Google Patents

具有冷卻特徵的傳感器封裝和製造其的方法

Info

Publication number
HK1211384A1
HK1211384A1 HK15112011.3A HK15112011A HK1211384A1 HK 1211384 A1 HK1211384 A1 HK 1211384A1 HK 15112011 A HK15112011 A HK 15112011A HK 1211384 A1 HK1211384 A1 HK 1211384A1
Authority
HK
Hong Kong
Prior art keywords
sensor package
making same
cooling feature
cooling
feature
Prior art date
Application number
HK15112011.3A
Other languages
English (en)
Inventor
Vage Oganesian
Zhenhua Lu
Original Assignee
Optiz Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optiz Inc filed Critical Optiz Inc
Publication of HK1211384A1 publication Critical patent/HK1211384A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/171—Disposition
    • H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/17181—On opposite sides of the body
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK15112011.3A 2013-12-05 2015-12-07 具有冷卻特徵的傳感器封裝和製造其的方法 HK1211384A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361912476P 2013-12-05 2013-12-05
US14/551,262 US9496297B2 (en) 2013-12-05 2014-11-24 Sensor package with cooling feature and method of making same

Publications (1)

Publication Number Publication Date
HK1211384A1 true HK1211384A1 (zh) 2016-05-20

Family

ID=53271987

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15112011.3A HK1211384A1 (zh) 2013-12-05 2015-12-07 具有冷卻特徵的傳感器封裝和製造其的方法

Country Status (5)

Country Link
US (4) US9496297B2 (zh)
KR (1) KR101597467B1 (zh)
CN (1) CN104701332A (zh)
HK (1) HK1211384A1 (zh)
TW (1) TWI593121B (zh)

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US20170033136A1 (en) 2017-02-02
US9972730B2 (en) 2018-05-15
CN104701332A (zh) 2015-06-10
US10199519B2 (en) 2019-02-05
US9893218B2 (en) 2018-02-13
US20150162366A1 (en) 2015-06-11
KR20150065604A (ko) 2015-06-15
US9496297B2 (en) 2016-11-15
TW201523895A (zh) 2015-06-16
US20180226517A1 (en) 2018-08-09
US20170033241A1 (en) 2017-02-02
TWI593121B (zh) 2017-07-21
KR101597467B1 (ko) 2016-03-07

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