HK1202986A1 - 具有穿過具有隔離區的觸點蝕刻終止層耦合的金屬觸點的圖像傳感器 - Google Patents
具有穿過具有隔離區的觸點蝕刻終止層耦合的金屬觸點的圖像傳感器Info
- Publication number
- HK1202986A1 HK1202986A1 HK15103508.2A HK15103508A HK1202986A1 HK 1202986 A1 HK1202986 A1 HK 1202986A1 HK 15103508 A HK15103508 A HK 15103508A HK 1202986 A1 HK1202986 A1 HK 1202986A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- stop layer
- etch stop
- isolation region
- metal contact
- Prior art date
Links
- 238000002955 isolation Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/858,754 US9287308B2 (en) | 2013-04-08 | 2013-04-08 | Image sensor having metal contact coupled through a contact etch stop layer with an isolation region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1202986A1 true HK1202986A1 (zh) | 2015-10-09 |
Family
ID=50442378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK15103508.2A HK1202986A1 (zh) | 2013-04-08 | 2015-04-10 | 具有穿過具有隔離區的觸點蝕刻終止層耦合的金屬觸點的圖像傳感器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9287308B2 (zh) |
| EP (1) | EP2790222A3 (zh) |
| JP (1) | JP2014204130A (zh) |
| KR (1) | KR101693921B1 (zh) |
| CN (1) | CN104103652B (zh) |
| HK (1) | HK1202986A1 (zh) |
| TW (1) | TWI559513B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9564468B2 (en) * | 2015-03-20 | 2017-02-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite grid structure to reduce crosstalk in back side illumination image sensors |
| KR102497812B1 (ko) | 2015-08-10 | 2023-02-09 | 삼성전자주식회사 | 이미지 센서 |
| US9769398B2 (en) * | 2016-01-06 | 2017-09-19 | Microsoft Technology Licensing, Llc | Image sensor with large-area global shutter contact |
| US10147754B2 (en) * | 2017-02-22 | 2018-12-04 | Omnivision Technologies, Inc. | Backside illuminated image sensor with improved contact area |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4966870A (en) | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
| US5840624A (en) | 1996-03-15 | 1998-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Reduction of via over etching for borderless contacts |
| US6083824A (en) | 1998-07-13 | 2000-07-04 | Taiwan Semiconductor Manufacturing Company | Borderless contact |
| JP4686201B2 (ja) | 2005-01-27 | 2011-05-25 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| KR100807214B1 (ko) | 2005-02-14 | 2008-03-03 | 삼성전자주식회사 | 향상된 감도를 갖는 이미지 센서 및 그 제조 방법 |
| KR100717277B1 (ko) | 2005-03-07 | 2007-05-15 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
| JP4340248B2 (ja) | 2005-03-17 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体撮像装置を製造する方法 |
| US7799654B2 (en) | 2005-08-31 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduced refractive index and extinction coefficient layer for enhanced photosensitivity |
| US20080017945A1 (en) | 2006-07-24 | 2008-01-24 | Yi-Tyng Wu | Method for fabricating color filters |
| JP4793402B2 (ja) * | 2008-04-21 | 2011-10-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| US8207590B2 (en) * | 2008-07-03 | 2012-06-26 | Samsung Electronics Co., Ltd. | Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods |
| US20100006908A1 (en) | 2008-07-09 | 2010-01-14 | Brady Frederick T | Backside illuminated image sensor with shallow backside trench for photodiode isolation |
| KR20100120875A (ko) * | 2009-05-07 | 2010-11-17 | 삼성전자주식회사 | 투과도가 향상된 반사 방지막을 갖는 후면 수광 시모스 이미지 센서 및 그 제조 방법 |
| JP5717357B2 (ja) | 2010-05-18 | 2015-05-13 | キヤノン株式会社 | 光電変換装置およびカメラ |
| US20120261730A1 (en) | 2011-04-15 | 2012-10-18 | Omnivision Technologies, Inc. | Floating diffusion structure for an image sensor |
-
2013
- 2013-04-08 US US13/858,754 patent/US9287308B2/en active Active
- 2013-10-28 TW TW102138954A patent/TWI559513B/zh active
- 2013-11-06 CN CN201310544735.6A patent/CN104103652B/zh active Active
-
2014
- 2014-04-04 EP EP14163622.5A patent/EP2790222A3/en not_active Withdrawn
- 2014-04-07 JP JP2014078462A patent/JP2014204130A/ja active Pending
- 2014-04-07 KR KR1020140041094A patent/KR101693921B1/ko active IP Right Grant
-
2015
- 2015-04-10 HK HK15103508.2A patent/HK1202986A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US9287308B2 (en) | 2016-03-15 |
| US20140299957A1 (en) | 2014-10-09 |
| CN104103652B (zh) | 2018-08-24 |
| TW201440206A (zh) | 2014-10-16 |
| KR20140121790A (ko) | 2014-10-16 |
| TWI559513B (zh) | 2016-11-21 |
| CN104103652A (zh) | 2014-10-15 |
| EP2790222A2 (en) | 2014-10-15 |
| KR101693921B1 (ko) | 2017-01-06 |
| EP2790222A3 (en) | 2014-11-19 |
| JP2014204130A (ja) | 2014-10-27 |
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