EP2790222A3 - Image sensor having metal contact coupled through a contact etch stop layer with an isolation region - Google Patents

Image sensor having metal contact coupled through a contact etch stop layer with an isolation region Download PDF

Info

Publication number
EP2790222A3
EP2790222A3 EP14163622.5A EP14163622A EP2790222A3 EP 2790222 A3 EP2790222 A3 EP 2790222A3 EP 14163622 A EP14163622 A EP 14163622A EP 2790222 A3 EP2790222 A3 EP 2790222A3
Authority
EP
European Patent Office
Prior art keywords
etch stop
stop layer
coupled
contact etch
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14163622.5A
Other languages
German (de)
French (fr)
Other versions
EP2790222A2 (en
Inventor
Sing-Chung Hu
Dajiang Yang
Oray Orkun Cellek
Dyson H. Tai
Gang Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Omnivision Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Technologies Inc filed Critical Omnivision Technologies Inc
Publication of EP2790222A2 publication Critical patent/EP2790222A2/en
Publication of EP2790222A3 publication Critical patent/EP2790222A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

An image sensor pixel includes one or more photodiodes (PD) disposed in a semiconductor layer (310). Pixel circuitry (326) is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer (320) is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer (322) is disposed over the passivation layer. One or more metal contacts (314) are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions (316) are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled to the pixel circuitry from the one or more photodiodes.
EP14163622.5A 2013-04-08 2014-04-04 Image sensor having metal contact coupled through a contact etch stop layer with an isolation region Withdrawn EP2790222A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/858,754 US9287308B2 (en) 2013-04-08 2013-04-08 Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

Publications (2)

Publication Number Publication Date
EP2790222A2 EP2790222A2 (en) 2014-10-15
EP2790222A3 true EP2790222A3 (en) 2014-11-19

Family

ID=50442378

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14163622.5A Withdrawn EP2790222A3 (en) 2013-04-08 2014-04-04 Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

Country Status (7)

Country Link
US (1) US9287308B2 (en)
EP (1) EP2790222A3 (en)
JP (1) JP2014204130A (en)
KR (1) KR101693921B1 (en)
CN (1) CN104103652B (en)
HK (1) HK1202986A1 (en)
TW (1) TWI559513B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564468B2 (en) * 2015-03-20 2017-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Composite grid structure to reduce crosstalk in back side illumination image sensors
KR102497812B1 (en) 2015-08-10 2023-02-09 삼성전자주식회사 Image sensor
US9769398B2 (en) * 2016-01-06 2017-09-19 Microsoft Technology Licensing, Llc Image sensor with large-area global shutter contact
US10147754B2 (en) * 2017-02-22 2018-12-04 Omnivision Technologies, Inc. Backside illuminated image sensor with improved contact area

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060163628A1 (en) * 2005-01-27 2006-07-27 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus and method for fabricating the same
US20060183265A1 (en) * 2005-02-14 2006-08-17 Samsung Electronics Co., Ltd. Image sensor having improved sensitivity and method for making same
US20060199295A1 (en) * 2005-03-07 2006-09-07 Samsung Electronics Co., Ltd. Image sensor and methods of forming the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966870A (en) 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
US5840624A (en) 1996-03-15 1998-11-24 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of via over etching for borderless contacts
US6083824A (en) 1998-07-13 2000-07-04 Taiwan Semiconductor Manufacturing Company Borderless contact
JP4340248B2 (en) 2005-03-17 2009-10-07 富士通マイクロエレクトロニクス株式会社 Method for manufacturing a semiconductor imaging device
US7799654B2 (en) 2005-08-31 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Reduced refractive index and extinction coefficient layer for enhanced photosensitivity
US20080017945A1 (en) 2006-07-24 2008-01-24 Yi-Tyng Wu Method for fabricating color filters
JP4793402B2 (en) * 2008-04-21 2011-10-12 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US8207590B2 (en) * 2008-07-03 2012-06-26 Samsung Electronics Co., Ltd. Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
US20100006908A1 (en) 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
KR20100120875A (en) * 2009-05-07 2010-11-17 삼성전자주식회사 Back illumination type cmos image sensor having an advanced permeability anti-reflective layer and method of manufacturing the same
JP5717357B2 (en) 2010-05-18 2015-05-13 キヤノン株式会社 Photoelectric conversion device and camera
US20120261730A1 (en) 2011-04-15 2012-10-18 Omnivision Technologies, Inc. Floating diffusion structure for an image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060163628A1 (en) * 2005-01-27 2006-07-27 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus and method for fabricating the same
US20060183265A1 (en) * 2005-02-14 2006-08-17 Samsung Electronics Co., Ltd. Image sensor having improved sensitivity and method for making same
US20060199295A1 (en) * 2005-03-07 2006-09-07 Samsung Electronics Co., Ltd. Image sensor and methods of forming the same

Also Published As

Publication number Publication date
US9287308B2 (en) 2016-03-15
US20140299957A1 (en) 2014-10-09
CN104103652B (en) 2018-08-24
TW201440206A (en) 2014-10-16
KR20140121790A (en) 2014-10-16
TWI559513B (en) 2016-11-21
HK1202986A1 (en) 2015-10-09
CN104103652A (en) 2014-10-15
EP2790222A2 (en) 2014-10-15
KR101693921B1 (en) 2017-01-06
JP2014204130A (en) 2014-10-27

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