HK1191985A1 - Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method - Google Patents

Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method

Info

Publication number
HK1191985A1
HK1191985A1 HK14104235.1A HK14104235A HK1191985A1 HK 1191985 A1 HK1191985 A1 HK 1191985A1 HK 14104235 A HK14104235 A HK 14104235A HK 1191985 A1 HK1191985 A1 HK 1191985A1
Authority
HK
Hong Kong
Prior art keywords
crystallographically textured
cell
thin layer
deposition method
metal substrate
Prior art date
Application number
HK14104235.1A
Other languages
English (en)
Chinese (zh)
Inventor
．雷雅爾
．雷代
．羅加卡瓦魯卡斯
．杰里達內
Original Assignee
安賽樂米塔爾不銹鋼及鎳合金公司
綜合工科學校
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安賽樂米塔爾不銹鋼及鎳合金公司, 綜合工科學校 filed Critical 安賽樂米塔爾不銹鋼及鎳合金公司
Publication of HK1191985A1 publication Critical patent/HK1191985A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
HK14104235.1A 2007-08-31 2014-05-02 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method HK1191985A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07301336.9A EP2031082B1 (fr) 2007-08-31 2007-08-31 Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces

Publications (1)

Publication Number Publication Date
HK1191985A1 true HK1191985A1 (en) 2014-08-08

Family

ID=38872469

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14104235.1A HK1191985A1 (en) 2007-08-31 2014-05-02 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method

Country Status (17)

Country Link
US (1) US9309592B2 (xx)
EP (1) EP2031082B1 (xx)
JP (1) JP5592259B2 (xx)
KR (1) KR101537305B1 (xx)
CN (2) CN103397247B (xx)
AU (1) AU2008294609B2 (xx)
BR (1) BRPI0815837B1 (xx)
CA (1) CA2698126C (xx)
EA (1) EA016990B1 (xx)
ES (1) ES2522582T3 (xx)
HK (1) HK1191985A1 (xx)
IL (1) IL205494A (xx)
MY (1) MY150031A (xx)
PL (1) PL2031082T3 (xx)
PT (1) PT2031082E (xx)
WO (1) WO2009030865A2 (xx)
ZA (1) ZA201001452B (xx)

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JP5589777B2 (ja) * 2010-11-05 2014-09-17 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5589776B2 (ja) * 2010-11-05 2014-09-17 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5625765B2 (ja) * 2010-11-05 2014-11-19 Ｊｆｅスチール株式会社 太陽電池基板用クロム含有フェライト系鋼板
JP5971890B2 (ja) * 2010-12-16 2016-08-17 セイコーインスツル株式会社 時計部品の製造方法および時計部品
FR2971086B1 (fr) 2011-01-31 2014-04-18 Inst Polytechnique Grenoble Structure adaptee a la formation de cellules solaires
US8937332B2 (en) * 2011-02-04 2015-01-20 Osram Sylvania Inc. Wavelength converter for an LED and LED containing same
US20140197801A1 (en) * 2011-05-20 2014-07-17 The Board Of Trustees Of The University Of Illinois Silicon-based electrode for a lithium-ion cell
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CN105132809B (zh) * 2015-09-02 2017-05-31 光昱（厦门）新能源有限公司 一种用于太阳能电池丝网印刷台面的合金及其制备方法
TWI596788B (zh) * 2015-11-10 2017-08-21 財團法人工業技術研究院 雙面光電轉換元件
RU2635982C1 (ru) * 2016-10-28 2017-11-17 Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) Способ изготовления ленты из железоникелевого сплава Fe-(49-50,5) мас. % Ni, имеющей острую кубическую текстуру
KR101921595B1 (ko) * 2016-12-13 2018-11-26 주식회사 포스코 리징성 및 표면품질이 우수한 페라이트계 스테인리스강 및 그 제조방법
CN107119234B (zh) * 2017-05-11 2019-01-18 东北大学 一种因瓦合金带材的细晶强化方法
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US11482417B2 (en) * 2019-08-23 2022-10-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure
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CN111180538A (zh) * 2019-12-31 2020-05-19 中威新能源(成都)有限公司 一种具有金字塔叠加结构的单晶硅片及制备方法
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Also Published As

Publication number Publication date
JP2010538448A (ja) 2010-12-09
BRPI0815837B1 (pt) 2019-09-03
AU2008294609B2 (en) 2012-09-13
AU2008294609A1 (en) 2009-03-12
EP2031082B1 (fr) 2014-09-03
CA2698126C (fr) 2016-08-09
EA201000408A1 (ru) 2010-10-29
IL205494A (en) 2013-08-29
MY150031A (en) 2013-11-29
CN103397247A (zh) 2013-11-20
CA2698126A1 (fr) 2009-03-12
CN101842508B (zh) 2013-05-01
KR20100080506A (ko) 2010-07-08
WO2009030865A3 (fr) 2009-04-30
US9309592B2 (en) 2016-04-12
JP5592259B2 (ja) 2014-09-17
CN101842508A (zh) 2010-09-22
WO2009030865A2 (fr) 2009-03-12
ES2522582T3 (es) 2014-11-17
PT2031082E (pt) 2014-11-04
US20100269887A1 (en) 2010-10-28
CN103397247B (zh) 2015-09-02
KR101537305B1 (ko) 2015-07-22
EA016990B1 (ru) 2012-08-30
EP2031082A1 (fr) 2009-03-04
IL205494A0 (en) 2011-07-31
BRPI0815837A2 (pt) 2018-01-09
ZA201001452B (en) 2010-11-24
PL2031082T3 (pl) 2015-03-31

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