HK1149118A1 - Semiconductor substrate contact via - Google Patents

Semiconductor substrate contact via

Info

Publication number
HK1149118A1
HK1149118A1 HK11103209.8A HK11103209A HK1149118A1 HK 1149118 A1 HK1149118 A1 HK 1149118A1 HK 11103209 A HK11103209 A HK 11103209A HK 1149118 A1 HK1149118 A1 HK 1149118A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor substrate
contact via
substrate contact
semiconductor
substrate
Prior art date
Application number
HK11103209.8A
Other languages
English (en)
Inventor
Gregory N Burton
Paul I Mikulan
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Publication of HK1149118A1 publication Critical patent/HK1149118A1/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2002/14387—Front shooter
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/18—Electrical connection established using vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
HK11103209.8A 2008-02-28 2011-03-29 Semiconductor substrate contact via HK1149118A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/055395 WO2009108201A1 (en) 2008-02-28 2008-02-28 Semiconductor substrate contact via

Publications (1)

Publication Number Publication Date
HK1149118A1 true HK1149118A1 (en) 2011-09-23

Family

ID=41016390

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11103209.8A HK1149118A1 (en) 2008-02-28 2011-03-29 Semiconductor substrate contact via

Country Status (9)

Country Link
US (1) US8476742B2 (zh)
EP (1) EP2248156B1 (zh)
JP (1) JP5400806B2 (zh)
CN (1) CN101960565B (zh)
AR (1) AR070710A1 (zh)
CL (1) CL2009000469A1 (zh)
HK (1) HK1149118A1 (zh)
TW (1) TWI493708B (zh)
WO (1) WO2009108201A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5923326B2 (ja) * 2012-02-08 2016-05-24 株式会社ジャパンディスプレイ 回路基板およびその製造方法、ならびに電気光学装置
US9469109B2 (en) 2014-11-03 2016-10-18 Stmicroelectronics S.R.L. Microfluid delivery device and method for manufacturing the same
KR102659138B1 (ko) 2016-10-19 2024-04-22 시크파 홀딩 에스에이 열 잉크젯 프린트헤드를 형성하는 방법, 열 잉크젯 프린트헤드, 및 반도체 웨이퍼
JP2021505449A (ja) 2017-12-08 2021-02-18 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 導電性接地構造間のギャップ
CN114684777B (zh) * 2020-12-30 2024-06-11 上海新微技术研发中心有限公司 Mems热泡打印头加热结构的制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358891A (en) 1979-06-22 1982-11-16 Burroughs Corporation Method of forming a metal semiconductor field effect transistor
US4363830A (en) * 1981-06-22 1982-12-14 Rca Corporation Method of forming tapered contact holes for integrated circuit devices
DE3684298D1 (de) 1986-01-09 1992-04-16 Ibm Verfahren zur herstellung eines kontakts unter verwendung der erweichung zweier glasschichten.
JPH0240935A (ja) 1988-07-30 1990-02-09 Sony Corp 多層配線構造
JPH05243397A (ja) 1992-03-03 1993-09-21 Fujitsu Ltd 半導体装置の製造方法
US5262352A (en) * 1992-08-31 1993-11-16 Motorola, Inc. Method for forming an interconnection structure for conductive layers
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5895264A (en) * 1997-07-30 1999-04-20 Chartered Semiconductor Manufacturing Ltd. Method for forming stacked polysilicon
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6883894B2 (en) * 2001-03-19 2005-04-26 Hewlett-Packard Development Company, L.P. Printhead with looped gate transistor structures
TW502379B (en) * 2001-10-26 2002-09-11 Ind Tech Res Inst Drive transistor structure of ink-jet printing head chip and its manufacturing method
US6902256B2 (en) * 2003-07-16 2005-06-07 Lexmark International, Inc. Ink jet printheads
US7150516B2 (en) * 2004-09-28 2006-12-19 Hewlett-Packard Development Company, L.P. Integrated circuit and method for manufacturing
TWI252813B (en) * 2004-11-10 2006-04-11 Benq Corp Fluid injector device with sensors and method of manufacturing the same
US7829262B2 (en) 2005-08-31 2010-11-09 Micron Technology, Inc. Method of forming pitch multipled contacts

Also Published As

Publication number Publication date
EP2248156B1 (en) 2018-09-05
CL2009000469A1 (es) 2009-08-07
EP2248156A1 (en) 2010-11-10
JP2011515024A (ja) 2011-05-12
CN101960565B (zh) 2012-09-05
CN101960565A (zh) 2011-01-26
US8476742B2 (en) 2013-07-02
WO2009108201A1 (en) 2009-09-03
AR070710A1 (es) 2010-04-28
JP5400806B2 (ja) 2014-01-29
EP2248156A4 (en) 2014-09-03
US20100320608A1 (en) 2010-12-23
TW200941730A (en) 2009-10-01
TWI493708B (zh) 2015-07-21

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170228