HK1133325A1 - High fill-factor sensor with reduced coupling - Google Patents
High fill-factor sensor with reduced couplingInfo
- Publication number
- HK1133325A1 HK1133325A1 HK09111299.6A HK09111299A HK1133325A1 HK 1133325 A1 HK1133325 A1 HK 1133325A1 HK 09111299 A HK09111299 A HK 09111299A HK 1133325 A1 HK1133325 A1 HK 1133325A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- high fill
- reduced coupling
- factor sensor
- factor
- sensor
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/531,707 US7615731B2 (en) | 2006-09-14 | 2006-09-14 | High fill-factor sensor with reduced coupling |
PCT/US2007/019640 WO2008033294A2 (en) | 2006-09-14 | 2007-09-10 | High fill-factor sensor with reduced coupling |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1133325A1 true HK1133325A1 (en) | 2010-03-19 |
Family
ID=39144410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09111299.6A HK1133325A1 (en) | 2006-09-14 | 2009-12-02 | High fill-factor sensor with reduced coupling |
Country Status (7)
Country | Link |
---|---|
US (1) | US7615731B2 (ko) |
EP (1) | EP2070121B1 (ko) |
KR (1) | KR101389641B1 (ko) |
CN (1) | CN101529593B (ko) |
HK (1) | HK1133325A1 (ko) |
TW (1) | TWI459545B (ko) |
WO (1) | WO2008033294A2 (ko) |
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TWI415283B (zh) * | 2009-02-18 | 2013-11-11 | Au Optronics Corp | X射線感測器及其製作方法 |
US8129810B2 (en) * | 2009-06-19 | 2012-03-06 | Carestream Health, Inc. | Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates |
TWI424574B (zh) * | 2009-07-28 | 2014-01-21 | Prime View Int Co Ltd | 數位x光探測面板及其製作方法 |
US7902512B1 (en) * | 2009-12-04 | 2011-03-08 | Carestream Health, Inc. | Coplanar high fill factor pixel architecture |
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KR20120075971A (ko) * | 2010-12-29 | 2012-07-09 | 삼성모바일디스플레이주식회사 | 적층형 포토다이오드 및 그 제조방법 |
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TWI496277B (zh) * | 2012-12-03 | 2015-08-11 | Innocom Tech Shenzhen Co Ltd | X光偵測裝置 |
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CN103681717B (zh) * | 2013-09-24 | 2017-04-26 | 徐廷贵 | α‑IGZO薄膜传感阵列的影像传感器及其制备方法 |
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EP3322342B1 (en) | 2015-07-14 | 2023-11-22 | DOSE Smart Imaging | Apparatus for radiation detection in a digital imaging system |
CN105789324B (zh) * | 2016-04-15 | 2019-05-03 | 京东方科技集团股份有限公司 | 传感器及其制造方法、电子设备 |
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JP6892577B2 (ja) * | 2017-04-28 | 2021-06-23 | 天馬微電子有限公司 | イメージセンサ及びセンサ装置 |
US10797110B2 (en) * | 2017-07-10 | 2020-10-06 | General Electric Company | Organic photodiode pixel for image detectors |
KR102630173B1 (ko) * | 2017-12-27 | 2024-01-26 | 엘지디스플레이 주식회사 | 엑스레이검출장치 |
KR102582641B1 (ko) | 2018-11-30 | 2023-09-26 | 삼성디스플레이 주식회사 | 전자 패널 및 이를 포함하는 전자 장치 |
JP7181462B2 (ja) * | 2019-01-17 | 2022-12-01 | 日本電信電話株式会社 | 光検出器 |
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-
2006
- 2006-09-14 US US11/531,707 patent/US7615731B2/en not_active Expired - Fee Related
-
2007
- 2007-08-31 TW TW096132657A patent/TWI459545B/zh not_active IP Right Cessation
- 2007-09-10 WO PCT/US2007/019640 patent/WO2008033294A2/en active Application Filing
- 2007-09-10 KR KR1020097005228A patent/KR101389641B1/ko active IP Right Grant
- 2007-09-10 CN CN2007800333402A patent/CN101529593B/zh not_active Expired - Fee Related
- 2007-09-10 EP EP07811720.7A patent/EP2070121B1/en not_active Expired - Fee Related
-
2009
- 2009-12-02 HK HK09111299.6A patent/HK1133325A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2070121A2 (en) | 2009-06-17 |
TWI459545B (zh) | 2014-11-01 |
KR101389641B1 (ko) | 2014-04-29 |
TW200832689A (en) | 2008-08-01 |
CN101529593B (zh) | 2012-05-16 |
WO2008033294A2 (en) | 2008-03-20 |
CN101529593A (zh) | 2009-09-09 |
KR20090057385A (ko) | 2009-06-05 |
WO2008033294A3 (en) | 2008-05-22 |
US20080067324A1 (en) | 2008-03-20 |
US7615731B2 (en) | 2009-11-10 |
EP2070121B1 (en) | 2013-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20190910 |