HK1127967A1 - Exposure apparatus, mask and micro device manufacturing method and projection optical apparatus - Google Patents

Exposure apparatus, mask and micro device manufacturing method and projection optical apparatus

Info

Publication number
HK1127967A1
HK1127967A1 HK09105346.1A HK09105346A HK1127967A1 HK 1127967 A1 HK1127967 A1 HK 1127967A1 HK 09105346 A HK09105346 A HK 09105346A HK 1127967 A1 HK1127967 A1 HK 1127967A1
Authority
HK
Hong Kong
Prior art keywords
mask
projection optical
device manufacturing
micro device
exposure apparatus
Prior art date
Application number
HK09105346.1A
Other languages
English (en)
Inventor
Masaki Kato
Original Assignee
Nikon Corp Kabushiki Kaisha Nikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp Kabushiki Kaisha Nikon filed Critical Nikon Corp Kabushiki Kaisha Nikon
Publication of HK1127967A1 publication Critical patent/HK1127967A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/004—Systems comprising a plurality of reflections between two or more surfaces, e.g. cells, resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
    • G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
HK09105346.1A 2006-03-20 2009-06-16 Exposure apparatus, mask and micro device manufacturing method and projection optical apparatus HK1127967A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006075853 2006-03-20
JP2006279388A JP4952182B2 (ja) 2006-03-20 2006-10-13 走査型露光装置、マイクロデバイスの製造方法、走査露光方法、及びマスク
PCT/JP2007/055417 WO2007108420A1 (fr) 2006-03-20 2007-03-16 appareil d'exposition À balayage, PROCÉDÉ DE FABRICATION DE micro-DISPOSITIF, MASQUE, appareil optique de projection et procédé de fabrication de masque

Publications (1)

Publication Number Publication Date
HK1127967A1 true HK1127967A1 (en) 2009-10-09

Family

ID=38522449

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09105346.1A HK1127967A1 (en) 2006-03-20 2009-06-16 Exposure apparatus, mask and micro device manufacturing method and projection optical apparatus

Country Status (7)

Country Link
EP (1) EP2003507A4 (fr)
JP (1) JP4952182B2 (fr)
KR (1) KR101445399B1 (fr)
CN (2) CN103019040B (fr)
HK (1) HK1127967A1 (fr)
TW (1) TWI408507B (fr)
WO (1) WO2007108420A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8917378B2 (en) * 2007-12-20 2014-12-23 Nikon Corporation Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area
JP5335397B2 (ja) 2008-02-15 2013-11-06 キヤノン株式会社 露光装置
JP5360529B2 (ja) * 2008-07-01 2013-12-04 株式会社ニコン 投影光学系、露光装置、およびデバイス製造方法
JP6056770B2 (ja) * 2011-12-20 2017-01-11 株式会社ニコン 基板処理装置、デバイス製造システム、及びデバイス製造方法
JP5837011B2 (ja) 2013-09-12 2015-12-24 本田技研工業株式会社 自動二輪車の変速制御装置
CN104570610B (zh) * 2013-10-11 2017-02-15 上海微电子装备有限公司 投影曝光装置
JP6651768B2 (ja) * 2015-09-28 2020-02-19 株式会社ニコン パターン描画装置
DE102022205272A1 (de) * 2022-05-25 2023-11-30 Carl Zeiss Smt Gmbh Katadioptrisches Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
KR100319216B1 (ko) 1993-06-30 2002-06-28 시마무라 테루오 노광장치
JP3477838B2 (ja) * 1993-11-11 2003-12-10 株式会社ニコン 走査型露光装置及び露光方法
JPH09134870A (ja) * 1995-11-10 1997-05-20 Hitachi Ltd パターン形成方法および形成装置
JP3864399B2 (ja) 1996-08-08 2006-12-27 株式会社ニコン 投影露光装置及び該投影露光装置に用いられる投影光学系並びにデバイス製造方法
DE19757074A1 (de) * 1997-12-20 1999-06-24 Zeiss Carl Fa Projektionsbelichtungsanlage und Belichtungsverfahren
TW200301848A (en) * 2002-01-09 2003-07-16 Nikon Corp Exposure apparatus and exposure method
JP4020248B2 (ja) * 2002-06-06 2007-12-12 大日本スクリーン製造株式会社 光描画装置および光描画方法
JP4401308B2 (ja) * 2004-03-29 2010-01-20 富士フイルム株式会社 露光装置
JP4466195B2 (ja) * 2004-05-20 2010-05-26 株式会社オーク製作所 描画システム
JP2005340605A (ja) * 2004-05-28 2005-12-08 Nikon Corp 露光装置およびその調整方法
CN1719339A (zh) * 2004-07-09 2006-01-11 富士胶片株式会社 曝光装置以及曝光方法
JP4676205B2 (ja) * 2004-07-09 2011-04-27 富士フイルム株式会社 露光装置および露光方法

Also Published As

Publication number Publication date
EP2003507A4 (fr) 2011-06-08
TWI408507B (zh) 2013-09-11
JP2007286580A (ja) 2007-11-01
KR20080113341A (ko) 2008-12-30
CN101384968A (zh) 2009-03-11
TW200745775A (en) 2007-12-16
KR101445399B1 (ko) 2014-09-26
JP4952182B2 (ja) 2012-06-13
CN103019040A (zh) 2013-04-03
CN103019040B (zh) 2015-09-16
CN101384968B (zh) 2013-01-02
EP2003507A1 (fr) 2008-12-17
WO2007108420A1 (fr) 2007-09-27

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210314