HK1084237A1 - Light-emitting or light-receiving semiconductor device and method for making the same - Google Patents

Light-emitting or light-receiving semiconductor device and method for making the same

Info

Publication number
HK1084237A1
HK1084237A1 HK06105889A HK06105889A HK1084237A1 HK 1084237 A1 HK1084237 A1 HK 1084237A1 HK 06105889 A HK06105889 A HK 06105889A HK 06105889 A HK06105889 A HK 06105889A HK 1084237 A1 HK1084237 A1 HK 1084237A1
Authority
HK
Hong Kong
Prior art keywords
light
emitting
making
semiconductor device
same
Prior art date
Application number
HK06105889A
Other languages
English (en)
Inventor
Nakata Josuke
Original Assignee
Nakata Josuke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nakata Josuke filed Critical Nakata Josuke
Publication of HK1084237A1 publication Critical patent/HK1084237A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
HK06105889A 2000-10-20 2006-05-23 Light-emitting or light-receiving semiconductor device and method for making the same HK1084237A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06000576A EP1646090B1 (de) 2000-10-20 2000-10-20 Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode
EP00969975A EP1253649B1 (de) 2000-10-20 2000-10-20 Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode
PCT/JP2000/007359 WO2002035612A1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor device and method for fabricating the same

Publications (1)

Publication Number Publication Date
HK1084237A1 true HK1084237A1 (en) 2006-07-21

Family

ID=11736611

Family Applications (1)

Application Number Title Priority Date Filing Date
HK06105889A HK1084237A1 (en) 2000-10-20 2006-05-23 Light-emitting or light-receiving semiconductor device and method for making the same

Country Status (11)

Country Link
US (1) US6744073B1 (de)
EP (2) EP1646090B1 (de)
JP (1) JP3938908B2 (de)
KR (1) KR100549249B1 (de)
CN (1) CN1182590C (de)
AU (1) AU773312B2 (de)
CA (1) CA2393219C (de)
DE (2) DE60039535D1 (de)
HK (1) HK1084237A1 (de)
TW (1) TW469655B (de)
WO (1) WO2002035612A1 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1427027A4 (de) * 2001-08-13 2006-12-20 Josuke Nakata Halbleiterbauelement und verfahren zu seiner herstellung
KR100561112B1 (ko) 2001-08-13 2006-03-15 죠스게 나가다 발광 또는 수광용 반도체 모듈 및 그 제조 방법
AU2001295987B2 (en) * 2001-10-19 2005-10-20 Sphelar Power Corporation Light emitting or light receiving semiconductor module and method for manufacturing the same
AU2002217500B2 (en) * 2001-12-25 2005-10-06 Sphelar Power Corporation Light receiving or emitting semiconductor apparatus
US7238966B2 (en) * 2002-05-02 2007-07-03 Josuke Nakata Light-receiving panel or light-emitting panel, and manufacturing method thereof
ATE417364T1 (de) * 2002-06-21 2008-12-15 Kyosemi Corp Lichtempfangs- oder lichtemissionseinrichtung und verfahren zu ihrer herstellung
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
CA2523544A1 (en) * 2003-04-30 2004-11-18 Cree, Inc. High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US6953760B2 (en) * 2003-06-04 2005-10-11 Saint-Gobain Ceramics & Plastics, Inc. Ceramic component containing inclusions
ES2320045T3 (es) 2003-06-09 2009-05-18 Kyosemi Corporation Sistema generador.
EP1668702A1 (de) * 2003-09-05 2006-06-14 Adrian H. Kitai Sphärengetragene dünnfilm-leuchtschicht-elektrolumineszenz-einrichtungen
US7214557B2 (en) * 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4827471B2 (ja) * 2005-09-09 2011-11-30 シャープ株式会社 バイパス機能付き太陽電池およびその製造方法
EP1969633B1 (de) 2005-12-22 2018-08-29 Cree, Inc. Beleuchtungsvorrichtung
CN101305474B (zh) * 2006-01-11 2012-03-21 京半导体股份有限公司 受光或发光用半导体模块
AU2006337843B2 (en) * 2006-02-06 2011-06-23 Sphelar Power Corporation Light receiving or emitting semiconductor module
CN102437152A (zh) * 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
AU2012227357C1 (en) * 2006-06-14 2014-08-07 Kyosemi Corporation Semiconductor device module
CN101461068B (zh) * 2006-06-14 2010-09-08 京半导体股份有限公司 棒形半导体装置
EP2040313A4 (de) 2006-07-04 2010-08-25 Kyosemi Corp Panel-förmiges halbleitermodul
AU2006345848B2 (en) 2006-07-07 2010-09-02 Energy Related Devices, Inc. Panel-shaped semiconductor module
JP5108766B2 (ja) 2006-08-07 2012-12-26 京セミ株式会社 発電又は発光用半導体モジュール
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
JP5225275B2 (ja) * 2007-07-18 2013-07-03 京セミ株式会社 太陽電池セル
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
KR101439386B1 (ko) 2008-08-08 2014-09-16 스페라 파워 가부시키가이샤 채광형 태양전지 모듈
SG182383A1 (en) * 2010-01-08 2012-08-30 Tri Alpha Energy Inc Conversion of high-energy photons into electricity
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US9859348B2 (en) * 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
US9455307B2 (en) * 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
JP6084226B2 (ja) * 2011-10-14 2017-02-22 ディフテック レーザーズ インコーポレイテッド 基板上に位置付けられる平坦化された半導体粒子
TWI506801B (zh) 2011-12-09 2015-11-01 Hon Hai Prec Ind Co Ltd 太陽能電池組
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
US8927964B2 (en) * 2012-11-20 2015-01-06 Nokia Corporation Photodetection
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US20160380126A1 (en) * 2015-06-25 2016-12-29 David Aaron Randolph Barkhouse Multi-layer barrier for metallization
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
EP3226291B1 (de) * 2016-04-01 2024-04-03 Nichia Corporation Verfahren zur herstellung eines montagesockelelements für ein lichtemittierendes element, und montagesockelelement für ein lichtemittierendes element
KR102177476B1 (ko) * 2019-02-28 2020-11-11 (주)소프트피브이 직렬 연결이 용이한 태양 전지 모듈

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516686A (de) 1974-07-08 1976-01-20 Hitachi Ltd
US4021323A (en) 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4037241A (en) * 1975-10-02 1977-07-19 Texas Instruments Incorporated Shaped emitters with buried-junction structure
JPH0750807B2 (ja) * 1984-03-28 1995-05-31 東北大学長 接合型半導体発光素子
US4691076A (en) * 1984-09-04 1987-09-01 Texas Instruments Incorporated Solar array with aluminum foil matrix
DE3745132C2 (de) * 1987-01-13 1998-03-19 Hoegl Helmut Photovoltaische Solarzellenanordnung mit mindestens zwei auf Abstand voneinander angeordneten Solarzellen-Elementen
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device
JPH01179374A (ja) * 1988-01-05 1989-07-17 Res Dev Corp Of Japan 接合型半導体発光素子
JPH04199887A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd ｐｎ接合素子及びその製造方法並びに青色発光ダイオード素子
JPH0536997A (ja) * 1991-07-26 1993-02-12 Sanyo Electric Co Ltd 光起電力装置
US5437736A (en) * 1994-02-15 1995-08-01 Cole; Eric D. Semiconductor fiber solar cells and modules
JPH08125210A (ja) * 1994-10-24 1996-05-17 Jiyousuke Nakada 受光素子及び受光素子アレイ並びにそれらを用いた電解装置
JPH09162434A (ja) 1995-12-05 1997-06-20 Hitachi Ltd 太陽電池およびその製造方法
AU715515B2 (en) * 1996-10-09 2000-02-03 Sphelar Power Corporation Semiconductor device
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
AU736457B2 (en) * 1997-08-27 2001-07-26 Sphelar Power Corporation Spherical semiconductor device and the manufacture method for the same and spherical semiconductor device material
JP3091846B1 (ja) * 1999-11-26 2000-09-25 株式会社三井ハイテック 太陽電池を含む球状半導体及びそれを用いた球状半導体装置
US6355873B1 (en) * 2000-06-21 2002-03-12 Ball Semiconductor, Inc. Spherical shaped solar cell fabrication and panel assembly

Also Published As

Publication number Publication date
KR100549249B1 (ko) 2006-02-03
JPWO2002035612A1 (ja) 2004-03-04
US6744073B1 (en) 2004-06-01
JP3938908B2 (ja) 2007-06-27
KR20020069349A (ko) 2002-08-30
DE60039545D1 (de) 2008-08-28
EP1253649A4 (de) 2005-11-16
DE60039535D1 (de) 2008-08-28
EP1646090B1 (de) 2008-07-16
AU773312B2 (en) 2004-05-20
AU7953300A (en) 2002-05-06
EP1646090A1 (de) 2006-04-12
EP1253649A1 (de) 2002-10-30
CN1373907A (zh) 2002-10-09
CN1182590C (zh) 2004-12-29
TW469655B (en) 2001-12-21
CA2393219A1 (en) 2002-05-02
CA2393219C (en) 2007-01-09
EP1253649B1 (de) 2008-07-16
WO2002035612A1 (en) 2002-05-02

Similar Documents

Publication Publication Date Title
HK1084237A1 (en) Light-emitting or light-receiving semiconductor device and method for making the same
HK1083706A1 (zh) 發光或者受光用半導體組件及其製造方法
EP1311002A4 (de) Halbleiter-lichtemissionsbauelement und verfahren zu seiner herstellung
GB2353404B (en) Semiconductor device and method for manufacturing the same
SG99939A1 (en) Semiconductor device
EP1231640A4 (de) Halbleiterbauelement
GB2373634B (en) Semiconductor device
EP1349217A4 (de) Leuchtbauelement und verfahren zu seiner herstellung und sichtbares licht ausstrahlendes bauelement
IL156619A0 (en) Semiconductor device and its manufacturing method
AU2001272741A1 (en) Semiconductor light-emitting device and semiconductor light-emitting apparatus
SG100696A1 (en) Semiconductor device and method for manufacturing same
SG118068A1 (en) Semiconductor device and manufacturing method thereof
SG112805A1 (en) Semiconductor device and manufacturing method thereof
GB0024804D0 (en) An optoelectronic device
SG132505A1 (en) Semiconductor device, and manufacturing method thereof
EP1335425A4 (de) Halbleiterbauelement und sein produktionsverfahren
EP1261040A4 (de) Halbleiteranordnung und ihre herstellungsmethode
GB2370916B (en) Semiconductor device
AU6071501A (en) Semiconductor light-emitting device
EP1318581A4 (de) Halbleiter laser und herstellungsverfahren
GB0030015D0 (en) Semiconductor laser device
AU2001257346A1 (en) Semiconductor device and method for manufacturing the same
GB2365621B (en) Semiconductor device
GB2368456B (en) Semiconductor device and method for manufacturing the same
EP1174967A4 (de) Halbleiterlaservorrichtung

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171020