HK1063687A1 - A method for non-destructive readout and apparatusfor use with the mehod - Google Patents

A method for non-destructive readout and apparatusfor use with the mehod

Info

Publication number
HK1063687A1
HK1063687A1 HK04106328A HK04106328A HK1063687A1 HK 1063687 A1 HK1063687 A1 HK 1063687A1 HK 04106328 A HK04106328 A HK 04106328A HK 04106328 A HK04106328 A HK 04106328A HK 1063687 A1 HK1063687 A1 HK 1063687A1
Authority
HK
Hong Kong
Prior art keywords
phase
memory cell
capacitor
logic state
signal
Prior art date
Application number
HK04106328A
Other languages
English (en)
Inventor
Per-Erik Nordal
Original Assignee
This Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by This Film Electronics Asa filed Critical This Film Electronics Asa
Publication of HK1063687A1 publication Critical patent/HK1063687A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
HK04106328A 2000-11-27 2004-08-24 A method for non-destructive readout and apparatusfor use with the mehod HK1063687A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
PCT/NO2001/000472 WO2002043070A1 (fr) 2000-11-27 2001-11-27 Procede et dispositif de lecture sans effacement

Publications (1)

Publication Number Publication Date
HK1063687A1 true HK1063687A1 (en) 2005-01-07

Family

ID=19911847

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04106328A HK1063687A1 (en) 2000-11-27 2004-08-24 A method for non-destructive readout and apparatusfor use with the mehod

Country Status (15)

Country Link
US (1) US6804139B2 (fr)
EP (1) EP1346366B1 (fr)
JP (1) JP3944450B2 (fr)
KR (1) KR100559926B1 (fr)
CN (1) CN1329920C (fr)
AT (1) ATE294444T1 (fr)
AU (2) AU2002223164B2 (fr)
CA (1) CA2429366C (fr)
DE (1) DE60110461T2 (fr)
DK (1) DK1346366T3 (fr)
ES (1) ES2239177T3 (fr)
HK (1) HK1063687A1 (fr)
NO (1) NO316580B1 (fr)
RU (1) RU2250518C1 (fr)
WO (1) WO2002043070A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
CN1303692C (zh) * 2002-09-04 2007-03-07 松下电器产业株式会社 半导体存储装置及其制造方法和驱动方法
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
RU2383945C2 (ru) 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти
US7929338B2 (en) * 2009-02-24 2011-04-19 International Business Machines Corporation Memory reading method for resistance drift mitigation
US8488361B2 (en) * 2011-02-01 2013-07-16 Stmicroelectronics S.R.L. Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
US8837195B2 (en) * 2012-09-25 2014-09-16 Palo Alto Research Center Incorporated Systems and methods for reading ferroelectric memories
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3132326A (en) 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US4068217A (en) * 1975-06-30 1978-01-10 International Business Machines Corporation Ultimate density non-volatile cross-point semiconductor memory array
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5151877A (en) 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5530667A (en) * 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
US5262982A (en) 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
JPH05129622A (ja) 1991-10-31 1993-05-25 Olympus Optical Co Ltd 強誘電体メモリ装置
JPH06275062A (ja) 1993-03-19 1994-09-30 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
EP1094469A1 (fr) * 1999-10-22 2001-04-25 Infineon Technologies AG Dispositif d'évaluation d'un signal de lecture provenant d'une cellule de mémoire capacitive ferroélectrique
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Also Published As

Publication number Publication date
AU2002223164B2 (en) 2005-02-17
JP3944450B2 (ja) 2007-07-11
KR20030059271A (ko) 2003-07-07
EP1346366B1 (fr) 2005-04-27
WO2002043070A1 (fr) 2002-05-30
DK1346366T3 (da) 2005-08-01
CN1329920C (zh) 2007-08-01
KR100559926B1 (ko) 2006-03-13
AU2316402A (en) 2002-06-03
US6804139B2 (en) 2004-10-12
EP1346366A1 (fr) 2003-09-24
DE60110461T2 (de) 2006-04-27
DE60110461D1 (de) 2005-06-02
CN1488147A (zh) 2004-04-07
ES2239177T3 (es) 2005-09-16
US20020191435A1 (en) 2002-12-19
RU2250518C1 (ru) 2005-04-20
NO316580B1 (no) 2004-02-23
NO20006002L (no) 2002-05-28
JP2004515023A (ja) 2004-05-20
CA2429366A1 (fr) 2002-05-30
ATE294444T1 (de) 2005-05-15
CA2429366C (fr) 2007-02-13
NO20006002D0 (no) 2000-11-27

Similar Documents

Publication Publication Date Title
KR100198617B1 (ko) 모오스 캐패시터의 누설전압감지회로
NO20003507D0 (no) FremgangsmÕte til dynamisk lesing/skriving i et ferroelektrisk minne samt kretsløsninger for utførelse av fremgangsmÕten
KR940022579A (ko) 강유전성 메모리 셀과 그 분극 상태를 감지하는 방법
HK1063687A1 (en) A method for non-destructive readout and apparatusfor use with the mehod
CN103543339A (zh) 电介质样品交直流空间电荷测试数据分析方法及装置
TW200702690A (en) Methods and apparatus for unpowered testing of open connections on power and ground nodes of circuit devices
GB2000299B (en) Detecting metabolic activity
CN114487563B (zh) 基于相位差的非侵入式电压测量方法、装置和电压传感器
Blutstein et al. Fast sweep differential pulse voltammetry at a dropping mercury electrode
KR900010368A (ko) 열기억 소자와 이들의 집합체, 열내력(熱內歷) 결정방법과 장치, 및 열내력 기록장치
WO2006063115A3 (fr) Procede et appareil de controle et de determination de la teneur en humidite d'une substance dans un recipient
Werner et al. Frequency behaviour of light‐addressable potentiometric sensors
JP2004515023A5 (fr)
RU2003119443A (ru) Способ неразрушающего считывания данных и устройство для осуществления данного способа
JP2921068B2 (ja) 部分放電試験装置
JPH0611480Y2 (ja) スペクトラムアナライザ
Cheung On the use of Fowler-Nordheim stress to reveal plasma-charging damage
CN108828023A (zh) 一种基于带宽增强技术的石墨烯气体传感器快速响应方法
Giacometti et al. Open-Circuit TSD Method and Anomalous Air Gap Current in Teflon® FEP
Bond et al. Use of pulsed direct current potential to minimize charging current in alternating current polarography
Helfmeier et al. Ultra sensitive measurement of dielectric current under pulsed stress conditions
CN206523921U (zh) 一种测量电感变化的系统
JP3017314B2 (ja) プローブ表面の汚染検出装置
SU859897A1 (ru) Пол рограф
SU1187063A1 (ru) Способ дифференциальной импульсной вольтамперометрии

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20111127