HK1055352A1 - Charge carrier extracting transistor - Google Patents

Charge carrier extracting transistor

Info

Publication number
HK1055352A1
HK1055352A1 HK03107593A HK03107593A HK1055352A1 HK 1055352 A1 HK1055352 A1 HK 1055352A1 HK 03107593 A HK03107593 A HK 03107593A HK 03107593 A HK03107593 A HK 03107593A HK 1055352 A1 HK1055352 A1 HK 1055352A1
Authority
HK
Hong Kong
Prior art keywords
quantum well
layer
source
inalsb
substrate
Prior art date
Application number
HK03107593A
Other languages
English (en)
Inventor
Timothy Jonathan Phillips
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of HK1055352A1 publication Critical patent/HK1055352A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
HK03107593A 2000-05-19 2003-10-20 Charge carrier extracting transistor HK1055352A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0012017A GB2362506A (en) 2000-05-19 2000-05-19 Field effect transistor with an InSb quantum well and minority carrier extraction
PCT/GB2001/001919 WO2001088995A1 (en) 2000-05-19 2001-05-02 Charge carrier extracting transistor

Publications (1)

Publication Number Publication Date
HK1055352A1 true HK1055352A1 (en) 2004-01-02

Family

ID=9891857

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03107593A HK1055352A1 (en) 2000-05-19 2003-10-20 Charge carrier extracting transistor

Country Status (11)

Country Link
US (1) US6770902B2 (de)
EP (1) EP1282918B1 (de)
JP (1) JP4972267B2 (de)
KR (1) KR100801955B1 (de)
CN (1) CN1220272C (de)
AT (1) ATE515801T1 (de)
AU (1) AU5238601A (de)
CA (1) CA2406642C (de)
GB (1) GB2362506A (de)
HK (1) HK1055352A1 (de)
WO (1) WO2001088995A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0206572D0 (en) * 2002-03-20 2002-05-01 Qinetiq Ltd Field effect transistors
US6825506B2 (en) * 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
CN100403549C (zh) * 2002-12-19 2008-07-16 松下电器产业株式会社 半导体器件及保持电路
JP4469139B2 (ja) * 2003-04-28 2010-05-26 シャープ株式会社 化合物半導体ｆｅｔ
GB0326993D0 (en) 2003-11-20 2003-12-24 Qinetiq Ltd Strained semiconductor devices
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US20060148182A1 (en) * 2005-01-03 2006-07-06 Suman Datta Quantum well transistor using high dielectric constant dielectric layer
CN101361189B (zh) * 2005-01-25 2011-02-16 莫克斯托尼克斯股份有限公司 高性能fet器件和方法
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
AU2006252590A1 (en) * 2005-05-31 2006-12-07 Mears Technologies, Inc. Microelectromechanical systems (MEMS) device including a superlattice and associated methods
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US9024298B2 (en) * 2005-07-26 2015-05-05 Xerox Corporation Encapsulation layer for electronic devices
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7485503B2 (en) * 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
US8143646B2 (en) * 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7429747B2 (en) * 2006-11-16 2008-09-30 Intel Corporation Sb-based CMOS devices
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US7713803B2 (en) * 2007-03-29 2010-05-11 Intel Corporation Mechanism for forming a remote delta doping layer of a quantum well structure
US20090218563A1 (en) * 2008-02-28 2009-09-03 Bruce Alvin Gurney Novel fabrication of semiconductor quantum well heterostructure devices
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
WO2010074964A2 (en) * 2008-12-23 2010-07-01 Intel Corporation Group iii-v mosfet having metal diffusion regions
US8093584B2 (en) * 2008-12-23 2012-01-10 Intel Corporation Self-aligned replacement metal gate process for QWFET devices
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
CN102484077A (zh) * 2009-09-07 2012-05-30 住友化学株式会社 场效应晶体管、半导体基板、场效应晶体管的制造方法及半导体基板的制造方法
US8324661B2 (en) * 2009-12-23 2012-12-04 Intel Corporation Quantum well transistors with remote counter doping
CN102194859B (zh) * 2010-03-05 2013-05-01 中国科学院微电子研究所 高迁移率ⅲ-ⅴ族半导体mos界面结构
CN101982731B (zh) * 2010-10-21 2012-05-23 天津大学 一种柔性薄膜微波应变传感器
CN101995235B (zh) * 2010-10-21 2012-07-18 天津大学 一种基于微波二极管的动态应变测量装置
US8891573B2 (en) 2012-05-14 2014-11-18 Arizona Board Of Regents 6.1 angstrom III-V and II-VI semiconductor platform
CN107968679B (zh) * 2017-11-20 2021-11-05 南京艾凯特光电科技有限公司 可见光通信装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
US4860064A (en) * 1987-10-21 1989-08-22 American Telephone And Telegraph Company At&T Bell Laboratories Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
JP3298637B2 (ja) * 1990-11-30 2002-07-02 横河電機株式会社 Ａｂ効果素子を用いたａ／ｄ変換器
GB9100351D0 (en) 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device
JPH04372137A (ja) * 1991-06-21 1992-12-25 Nec Corp 電界効果トランジスタ
GB2331841A (en) 1997-11-28 1999-06-02 Secr Defence Field effect transistor

Also Published As

Publication number Publication date
GB2362506A (en) 2001-11-21
WO2001088995A1 (en) 2001-11-22
JP4972267B2 (ja) 2012-07-11
CA2406642C (en) 2012-12-18
KR100801955B1 (ko) 2008-02-12
CA2406642A1 (en) 2001-11-22
US20030080332A1 (en) 2003-05-01
JP2003533887A (ja) 2003-11-11
KR20030034072A (ko) 2003-05-01
US6770902B2 (en) 2004-08-03
AU5238601A (en) 2001-11-26
CN1220272C (zh) 2005-09-21
CN1429408A (zh) 2003-07-09
EP1282918A1 (de) 2003-02-12
GB0012017D0 (en) 2000-07-05
EP1282918B1 (de) 2011-07-06
ATE515801T1 (de) 2011-07-15

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20150502