HK1048712B - 基於二极管和阴极导电性以及阴极发光的数据存储介质 - Google Patents

基於二极管和阴极导电性以及阴极发光的数据存储介质 Download PDF

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Publication number
HK1048712B
HK1048712B HK03100872.0A HK03100872A HK1048712B HK 1048712 B HK1048712 B HK 1048712B HK 03100872 A HK03100872 A HK 03100872A HK 1048712 B HK1048712 B HK 1048712B
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HK
Hong Kong
Prior art keywords
storage medium
data storage
energy
storage device
region
Prior art date
Application number
HK03100872.0A
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English (en)
Chinese (zh)
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HK1048712A1 (en
Inventor
G‧A‧吉布森
Original Assignee
三星电子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 三星电子株式会社 filed Critical 三星电子株式会社
Publication of HK1048712A1 publication Critical patent/HK1048712A1/xx
Publication of HK1048712B publication Critical patent/HK1048712B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Luminescent Compositions (AREA)
HK03100872.0A 2000-12-01 2003-02-06 基於二极管和阴极导电性以及阴极发光的数据存储介质 HK1048712B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/726,621 US6507552B2 (en) 2000-12-01 2000-12-01 AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media
US09/726621 2000-12-01

Publications (2)

Publication Number Publication Date
HK1048712A1 HK1048712A1 (en) 2003-04-11
HK1048712B true HK1048712B (zh) 2005-11-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
HK03100872.0A HK1048712B (zh) 2000-12-01 2003-02-06 基於二极管和阴极导电性以及阴极发光的数据存储介质

Country Status (5)

Country Link
US (1) US6507552B2 (https=)
EP (1) EP1211680A3 (https=)
JP (2) JP2002222930A (https=)
CN (1) CN1196197C (https=)
HK (1) HK1048712B (https=)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3716467B2 (ja) * 1995-07-19 2005-11-16 ソニー株式会社 記録媒体並びに情報再生装置、情報記録装置及び情報記録再生装置
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
AU2001286157A1 (en) * 2000-11-16 2002-05-27 International Business Machines Corporation Method and apparatus for reading an array of thermal resistance sensors
KR20020054111A (ko) * 2000-12-27 2002-07-06 오길록 1차원 다기능/다중 탐침 열을 이용한 고속/고밀도 광정보저장장치
US6735163B2 (en) * 2001-03-02 2004-05-11 Hewlett-Packard Development Company, L.P. Ultra-high density storage device with resonant scanning micromover
US20020138301A1 (en) * 2001-03-22 2002-09-26 Thanos Karras Integration of a portal into an application service provider data archive and/or web based viewer
US6975575B2 (en) 2001-10-31 2005-12-13 Hewlett-Packard Development Company, L.P. Data storage media and methods utilizing a layer adjacent the storage layer
US7082095B2 (en) 2001-05-25 2006-07-25 Hewlett-Packard Development Company, L.P. System and method for storing data
US6980507B2 (en) * 2002-08-30 2005-12-27 Hewlett-Packard Development Company, L.P. Luminescence-phase change based data storage
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
US6985377B2 (en) 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
JP4141811B2 (ja) * 2002-11-18 2008-08-27 パイオニア株式会社 情報記録読取ヘッド
US7057997B2 (en) * 2003-04-23 2006-06-06 Hewlett-Packard Development Company, L.P. Class of electron beam based data storage devices and methods of use thereof
US20040213129A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Emitter cluster for a data storage device
US6885582B2 (en) * 2003-06-12 2005-04-26 Hewlett-Packard Development Company, L.P. Magnetic memory storage device
US7161875B2 (en) * 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US6819587B1 (en) * 2003-06-12 2004-11-16 Hewlett-Packard Development Company, L.P. Thermal-assisted nanotip magnetic memory storage device
US20040257848A1 (en) * 2003-06-18 2004-12-23 Macronix International Co., Ltd. Method for adjusting the threshold voltage of a memory cell
US7315505B2 (en) * 2003-07-14 2008-01-01 Hewlett-Packard Development Company, L.P. Storage device having a probe with plural tips
US7280456B2 (en) * 2003-07-28 2007-10-09 Intel Corporation Methods and apparatus for determining the state of a variable resistive layer in a material stack
JP4249573B2 (ja) * 2003-09-03 2009-04-02 パイオニア株式会社 位置認識構造を有する記録媒体、位置認識装置および位置認識方法
US6984862B2 (en) * 2003-10-20 2006-01-10 Hewlett-Packard Development Company, L.P. Storage device with charge trapping structure and methods
KR100552701B1 (ko) * 2003-11-24 2006-02-20 삼성전자주식회사 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050243592A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F High density data storage device having eraseable bit cells
WO2005104133A2 (en) * 2004-04-16 2005-11-03 Nanochip, Inc. High density data storage
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US20050243660A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F Methods for erasing bit cells in a high density data storage device
US7002820B2 (en) 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
US7050320B1 (en) * 2004-12-23 2006-05-23 Intel Corporation MEMS probe based memory
KR100682968B1 (ko) * 2005-02-11 2007-02-15 삼성전자주식회사 정보저장장치용 탐침
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7463573B2 (en) * 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US20070008866A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. Methods for writing and reading in a polarity-dependent memory switch media
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
JP4476919B2 (ja) * 2005-12-01 2010-06-09 株式会社東芝 不揮発性記憶装置
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
US20090129246A1 (en) * 2007-11-21 2009-05-21 Nanochip, Inc. Environmental management of a probe storage device
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
US20100039729A1 (en) * 2008-08-14 2010-02-18 Nanochip, Inc. Package with integrated magnets for electromagnetically-actuated probe-storage device
US20100039919A1 (en) * 2008-08-15 2010-02-18 Nanochip, Inc. Cantilever Structure for Use in Seek-and-Scan Probe Storage
EP2211343A1 (en) * 2009-01-27 2010-07-28 Thomson Licensing High data density optical recording medium
US9310396B2 (en) * 2013-03-05 2016-04-12 Alliance For Sustainable Energy, Llc Apparatus and methods of measuring minority carrier lifetime using a liquid probe
US20150302884A1 (en) * 2014-04-18 2015-10-22 Battelle Memorial Institute Apparatus and method of multi-bit and gray-scale high density data storage
CN105510638B (zh) * 2014-09-24 2018-10-19 中国科学院宁波材料技术与工程研究所 一种扫描探针显微镜中的探针、其制备方法及探测方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761895A (en) * 1971-03-17 1973-09-25 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
US4427886A (en) 1982-08-02 1984-01-24 Wisconsin Alumni Research Foundation Low voltage field emission electron gun
JPS59163506A (ja) 1983-03-09 1984-09-14 Hitachi Ltd 電子ビ−ム測長装置
US4534016A (en) 1983-07-08 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Beam addressed memory system
DE3607932A1 (de) * 1986-03-11 1987-09-17 Werner Prof Dr Kreutz Datenspeicher, sowie verfahren zur herstellung eines datenspeichers und einer sonde zur informationseingabe und abnahme sowie loeschung
US4760567A (en) 1986-08-11 1988-07-26 Electron Beam Memories Electron beam memory system with ultra-compact, high current density electron gun
US5216631A (en) 1990-11-02 1993-06-01 Sliwa Jr John W Microvibratory memory device
JPH0536128A (ja) 1990-12-20 1993-02-12 Hitachi Ltd 高密度情報記録媒体及びそれを用いた記録装置
US5537372A (en) 1991-11-15 1996-07-16 International Business Machines Corporation High density data storage system with topographic contact sensor
JPH06251435A (ja) 1993-03-01 1994-09-09 Canon Inc 記録再生装置
US6252226B1 (en) * 1994-07-28 2001-06-26 General Nanotechnology, L.L.C. Nanometer scale data storage device and associated positioning system
US5615143A (en) * 1994-09-19 1997-03-25 Cornell Research Foundation, Inc. Optomechanical terabit data storage system
US5557596A (en) 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
JPH08297871A (ja) * 1995-04-21 1996-11-12 Hewlett Packard Co <Hp> 高密度記録媒体及び大容量記録装置
US5724336A (en) 1995-04-25 1998-03-03 Morton; Steven G. Tera-byte disk drive
JPH09134502A (ja) * 1995-11-08 1997-05-20 Matsushita Electric Ind Co Ltd 記録再生ヘッドおよび記録再生装置
US5835477A (en) 1996-07-10 1998-11-10 International Business Machines Corporation Mass-storage applications of local probe arrays
JP2000516708A (ja) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置
US6084848A (en) * 1996-11-11 2000-07-04 Kabushiki Kaisha Toshiba Two-dimensional near field optical memory head
JP3477024B2 (ja) * 1997-02-25 2003-12-10 株式会社東芝 記録媒体、記録方法、消去方法、再生方法、記録・再生方法、再生装置および記録・再生装置
US5936243A (en) 1997-06-09 1999-08-10 Ian Hardcastle Conductive micro-probe and memory device
JPH11265520A (ja) * 1998-03-17 1999-09-28 Hitachi Ltd 近接場光ヘッド、近接場光ヘッドの加工方法および光記録再生装置

Also Published As

Publication number Publication date
JP4972000B2 (ja) 2012-07-11
US6507552B2 (en) 2003-01-14
CN1196197C (zh) 2005-04-06
US20020067634A1 (en) 2002-06-06
JP2002222930A (ja) 2002-08-09
JP2008172252A (ja) 2008-07-24
HK1048712A1 (en) 2003-04-11
CN1367534A (zh) 2002-09-04
EP1211680A3 (en) 2003-08-27
EP1211680A2 (en) 2002-06-05

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