CN1196197C - 基于二极管和阴极导电性以及阴极发光的数据存储介质 - Google Patents
基于二极管和阴极导电性以及阴极发光的数据存储介质 Download PDFInfo
- Publication number
- CN1196197C CN1196197C CNB01124741XA CN01124741A CN1196197C CN 1196197 C CN1196197 C CN 1196197C CN B01124741X A CNB01124741X A CN B01124741XA CN 01124741 A CN01124741 A CN 01124741A CN 1196197 C CN1196197 C CN 1196197C
- Authority
- CN
- China
- Prior art keywords
- storage medium
- energy
- data storage
- storage device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
- Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Memories (AREA)
- Optical Recording Or Reproduction (AREA)
- Optical Head (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/726,621 US6507552B2 (en) | 2000-12-01 | 2000-12-01 | AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media |
| US09/726621 | 2000-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1367534A CN1367534A (zh) | 2002-09-04 |
| CN1196197C true CN1196197C (zh) | 2005-04-06 |
Family
ID=24919338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01124741XA Expired - Lifetime CN1196197C (zh) | 2000-12-01 | 2001-08-01 | 基于二极管和阴极导电性以及阴极发光的数据存储介质 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6507552B2 (https=) |
| EP (1) | EP1211680A3 (https=) |
| JP (2) | JP2002222930A (https=) |
| CN (1) | CN1196197C (https=) |
| HK (1) | HK1048712B (https=) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716467B2 (ja) * | 1995-07-19 | 2005-11-16 | ソニー株式会社 | 記録媒体並びに情報再生装置、情報記録装置及び情報記録再生装置 |
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| AU2001286157A1 (en) * | 2000-11-16 | 2002-05-27 | International Business Machines Corporation | Method and apparatus for reading an array of thermal resistance sensors |
| KR20020054111A (ko) * | 2000-12-27 | 2002-07-06 | 오길록 | 1차원 다기능/다중 탐침 열을 이용한 고속/고밀도 광정보저장장치 |
| US6735163B2 (en) * | 2001-03-02 | 2004-05-11 | Hewlett-Packard Development Company, L.P. | Ultra-high density storage device with resonant scanning micromover |
| US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
| US6975575B2 (en) | 2001-10-31 | 2005-12-13 | Hewlett-Packard Development Company, L.P. | Data storage media and methods utilizing a layer adjacent the storage layer |
| US7082095B2 (en) | 2001-05-25 | 2006-07-25 | Hewlett-Packard Development Company, L.P. | System and method for storing data |
| US6980507B2 (en) * | 2002-08-30 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Luminescence-phase change based data storage |
| US20040150472A1 (en) * | 2002-10-15 | 2004-08-05 | Rust Thomas F. | Fault tolerant micro-electro mechanical actuators |
| US6985377B2 (en) | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
| US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
| US6982898B2 (en) * | 2002-10-15 | 2006-01-03 | Nanochip, Inc. | Molecular memory integrated circuit utilizing non-vibrating cantilevers |
| JP4141811B2 (ja) * | 2002-11-18 | 2008-08-27 | パイオニア株式会社 | 情報記録読取ヘッド |
| US7057997B2 (en) * | 2003-04-23 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | Class of electron beam based data storage devices and methods of use thereof |
| US20040213129A1 (en) * | 2003-04-25 | 2004-10-28 | Marshall Daniel R. | Emitter cluster for a data storage device |
| US6885582B2 (en) * | 2003-06-12 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Magnetic memory storage device |
| US7161875B2 (en) * | 2003-06-12 | 2007-01-09 | Hewlett-Packard Development Company, L.P. | Thermal-assisted magnetic memory storage device |
| US6819587B1 (en) * | 2003-06-12 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermal-assisted nanotip magnetic memory storage device |
| US20040257848A1 (en) * | 2003-06-18 | 2004-12-23 | Macronix International Co., Ltd. | Method for adjusting the threshold voltage of a memory cell |
| US7315505B2 (en) * | 2003-07-14 | 2008-01-01 | Hewlett-Packard Development Company, L.P. | Storage device having a probe with plural tips |
| US7280456B2 (en) * | 2003-07-28 | 2007-10-09 | Intel Corporation | Methods and apparatus for determining the state of a variable resistive layer in a material stack |
| JP4249573B2 (ja) * | 2003-09-03 | 2009-04-02 | パイオニア株式会社 | 位置認識構造を有する記録媒体、位置認識装置および位置認識方法 |
| US6984862B2 (en) * | 2003-10-20 | 2006-01-10 | Hewlett-Packard Development Company, L.P. | Storage device with charge trapping structure and methods |
| KR100552701B1 (ko) * | 2003-11-24 | 2006-02-20 | 삼성전자주식회사 | 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법 |
| US7301887B2 (en) * | 2004-04-16 | 2007-11-27 | Nanochip, Inc. | Methods for erasing bit cells in a high density data storage device |
| US20050243592A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | High density data storage device having eraseable bit cells |
| WO2005104133A2 (en) * | 2004-04-16 | 2005-11-03 | Nanochip, Inc. | High density data storage |
| US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
| US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
| US20050243660A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | Methods for erasing bit cells in a high density data storage device |
| US7002820B2 (en) | 2004-06-17 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Semiconductor storage device |
| US7050320B1 (en) * | 2004-12-23 | 2006-05-23 | Intel Corporation | MEMS probe based memory |
| KR100682968B1 (ko) * | 2005-02-11 | 2007-02-15 | 삼성전자주식회사 | 정보저장장치용 탐침 |
| US7367119B2 (en) * | 2005-06-24 | 2008-05-06 | Nanochip, Inc. | Method for forming a reinforced tip for a probe storage device |
| US7463573B2 (en) * | 2005-06-24 | 2008-12-09 | Nanochip, Inc. | Patterned media for a high density data storage device |
| US20060291271A1 (en) * | 2005-06-24 | 2006-12-28 | Nanochip, Inc. | High density data storage devices having servo indicia formed in a patterned media |
| US20070008866A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | Methods for writing and reading in a polarity-dependent memory switch media |
| US7309630B2 (en) * | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
| US20070008867A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with a lubricant layer comprised of a field of polymer chains |
| US20070008865A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with polarity-dependent memory switching media |
| JP4476919B2 (ja) * | 2005-12-01 | 2010-06-09 | 株式会社東芝 | 不揮発性記憶装置 |
| US20080001075A1 (en) * | 2006-06-15 | 2008-01-03 | Nanochip, Inc. | Memory stage for a probe storage device |
| US20070290282A1 (en) * | 2006-06-15 | 2007-12-20 | Nanochip, Inc. | Bonded chip assembly with a micro-mover for microelectromechanical systems |
| US20080023885A1 (en) * | 2006-06-15 | 2008-01-31 | Nanochip, Inc. | Method for forming a nano-imprint lithography template having very high feature counts |
| US20080175033A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for improving domain stability in a ferroelectric media |
| US20080174918A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for writing and reading a charge-trap media with a probe tip |
| US20080233672A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Method of integrating mems structures and cmos structures using oxide fusion bonding |
| US20090129246A1 (en) * | 2007-11-21 | 2009-05-21 | Nanochip, Inc. | Environmental management of a probe storage device |
| US20090294028A1 (en) * | 2008-06-03 | 2009-12-03 | Nanochip, Inc. | Process for fabricating high density storage device with high-temperature media |
| US20100039729A1 (en) * | 2008-08-14 | 2010-02-18 | Nanochip, Inc. | Package with integrated magnets for electromagnetically-actuated probe-storage device |
| US20100039919A1 (en) * | 2008-08-15 | 2010-02-18 | Nanochip, Inc. | Cantilever Structure for Use in Seek-and-Scan Probe Storage |
| EP2211343A1 (en) * | 2009-01-27 | 2010-07-28 | Thomson Licensing | High data density optical recording medium |
| US9310396B2 (en) * | 2013-03-05 | 2016-04-12 | Alliance For Sustainable Energy, Llc | Apparatus and methods of measuring minority carrier lifetime using a liquid probe |
| US20150302884A1 (en) * | 2014-04-18 | 2015-10-22 | Battelle Memorial Institute | Apparatus and method of multi-bit and gray-scale high density data storage |
| CN105510638B (zh) * | 2014-09-24 | 2018-10-19 | 中国科学院宁波材料技术与工程研究所 | 一种扫描探针显微镜中的探针、其制备方法及探测方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3761895A (en) * | 1971-03-17 | 1973-09-25 | Gen Electric | Method and apparatus for storing and reading out charge in an insulating layer |
| US4213192A (en) * | 1979-01-15 | 1980-07-15 | Christensen Alton O Sr | Electron beam accessed read-write-erase random access memory |
| US4427886A (en) | 1982-08-02 | 1984-01-24 | Wisconsin Alumni Research Foundation | Low voltage field emission electron gun |
| JPS59163506A (ja) | 1983-03-09 | 1984-09-14 | Hitachi Ltd | 電子ビ−ム測長装置 |
| US4534016A (en) | 1983-07-08 | 1985-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | Beam addressed memory system |
| DE3607932A1 (de) * | 1986-03-11 | 1987-09-17 | Werner Prof Dr Kreutz | Datenspeicher, sowie verfahren zur herstellung eines datenspeichers und einer sonde zur informationseingabe und abnahme sowie loeschung |
| US4760567A (en) | 1986-08-11 | 1988-07-26 | Electron Beam Memories | Electron beam memory system with ultra-compact, high current density electron gun |
| US5216631A (en) | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
| JPH0536128A (ja) | 1990-12-20 | 1993-02-12 | Hitachi Ltd | 高密度情報記録媒体及びそれを用いた記録装置 |
| US5537372A (en) | 1991-11-15 | 1996-07-16 | International Business Machines Corporation | High density data storage system with topographic contact sensor |
| JPH06251435A (ja) | 1993-03-01 | 1994-09-09 | Canon Inc | 記録再生装置 |
| US6252226B1 (en) * | 1994-07-28 | 2001-06-26 | General Nanotechnology, L.L.C. | Nanometer scale data storage device and associated positioning system |
| US5615143A (en) * | 1994-09-19 | 1997-03-25 | Cornell Research Foundation, Inc. | Optomechanical terabit data storage system |
| US5557596A (en) | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| JPH08297871A (ja) * | 1995-04-21 | 1996-11-12 | Hewlett Packard Co <Hp> | 高密度記録媒体及び大容量記録装置 |
| US5724336A (en) | 1995-04-25 | 1998-03-03 | Morton; Steven G. | Tera-byte disk drive |
| JPH09134502A (ja) * | 1995-11-08 | 1997-05-20 | Matsushita Electric Ind Co Ltd | 記録再生ヘッドおよび記録再生装置 |
| US5835477A (en) | 1996-07-10 | 1998-11-10 | International Business Machines Corporation | Mass-storage applications of local probe arrays |
| JP2000516708A (ja) * | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置 |
| US6084848A (en) * | 1996-11-11 | 2000-07-04 | Kabushiki Kaisha Toshiba | Two-dimensional near field optical memory head |
| JP3477024B2 (ja) * | 1997-02-25 | 2003-12-10 | 株式会社東芝 | 記録媒体、記録方法、消去方法、再生方法、記録・再生方法、再生装置および記録・再生装置 |
| US5936243A (en) | 1997-06-09 | 1999-08-10 | Ian Hardcastle | Conductive micro-probe and memory device |
| JPH11265520A (ja) * | 1998-03-17 | 1999-09-28 | Hitachi Ltd | 近接場光ヘッド、近接場光ヘッドの加工方法および光記録再生装置 |
-
2000
- 2000-12-01 US US09/726,621 patent/US6507552B2/en not_active Expired - Lifetime
-
2001
- 2001-08-01 CN CNB01124741XA patent/CN1196197C/zh not_active Expired - Lifetime
- 2001-11-28 EP EP01309970A patent/EP1211680A3/en not_active Withdrawn
- 2001-11-28 JP JP2001362011A patent/JP2002222930A/ja active Pending
-
2003
- 2003-02-06 HK HK03100872.0A patent/HK1048712B/zh not_active IP Right Cessation
-
2008
- 2008-01-22 JP JP2008011635A patent/JP4972000B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4972000B2 (ja) | 2012-07-11 |
| US6507552B2 (en) | 2003-01-14 |
| US20020067634A1 (en) | 2002-06-06 |
| JP2002222930A (ja) | 2002-08-09 |
| JP2008172252A (ja) | 2008-07-24 |
| HK1048712B (zh) | 2005-11-18 |
| HK1048712A1 (en) | 2003-04-11 |
| CN1367534A (zh) | 2002-09-04 |
| EP1211680A3 (en) | 2003-08-27 |
| EP1211680A2 (en) | 2002-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1196197C (zh) | 基于二极管和阴极导电性以及阴极发光的数据存储介质 | |
| EP0734017B1 (en) | Storage device | |
| US7170842B2 (en) | Methods for conducting current between a scanned-probe and storage medium | |
| US6335522B1 (en) | Optical probe having a refractive index micro-lens and method of manufacturing the same | |
| US7295503B2 (en) | Data storage device including nanotube electron sources | |
| EP1310954A2 (en) | Method and system for storing and retrieving data | |
| CN1183598C (zh) | 基于调整阴极导电率的超高密度信息存储器 | |
| US6735163B2 (en) | Ultra-high density storage device with resonant scanning micromover | |
| JP4234077B2 (ja) | データ記憶デバイス及びデータ記憶デバイス内のデータを読み出す方法 | |
| CN1263002C (zh) | 利用定向光束和近场光源的数据存储媒体 | |
| US6975575B2 (en) | Data storage media and methods utilizing a layer adjacent the storage layer | |
| TW575874B (en) | Data storage device | |
| JP4437619B2 (ja) | 近接場光用のプローブ及びその作製方法、並びに近接場光学顕微鏡、光メモリの情報記録再生方式 | |
| JP2004327027A (ja) | 電子ビームを用いた新しい種類のデータ記憶デバイスおよびそれを利用するための方法 | |
| US20050017624A1 (en) | Electron emitter with epitaxial layers | |
| HK1048882A (en) | Methods for conducting current between a scanned-probe and storage medium | |
| US7082095B2 (en) | System and method for storing data | |
| US20050040383A1 (en) | Data storage device | |
| TW202441544A (zh) | 利用電場控制電子親合力的半導電冷光電陰極元件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: HEWLETT-PACKARD CO. (US) P.O. BOX 10301, PALO ALTO CALIFORNIA U.S.A. Effective date: 20110222 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: STATE OF CALIFORNIA, THE USA TO: GYEONGGI-DO, SOUTH KOREA |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110222 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co.,Ltd. Address before: California, USA Patentee before: Hewlett-Packard Co. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20050406 |
|
| CX01 | Expiry of patent term |