JP2002222930A - Ａｆｍ型のデータ記憶装置 - Google Patents

Ａｆｍ型のデータ記憶装置

Info

Publication number
JP2002222930A
JP2002222930A JP2001362011A JP2001362011A JP2002222930A JP 2002222930 A JP2002222930 A JP 2002222930A JP 2001362011 A JP2001362011 A JP 2001362011A JP 2001362011 A JP2001362011 A JP 2001362011A JP 2002222930 A JP2002222930 A JP 2002222930A
Authority
JP
Japan
Prior art keywords
storage medium
emitter
storage
present
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001362011A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002222930A5 (https=
Inventor
Gary A Gibson
エー・ギブソン ゲイリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2002222930A publication Critical patent/JP2002222930A/ja
Publication of JP2002222930A5 publication Critical patent/JP2002222930A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Luminescent Compositions (AREA)
JP2001362011A 2000-12-01 2001-11-28 Ａｆｍ型のデータ記憶装置 Pending JP2002222930A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/726,621 US6507552B2 (en) 2000-12-01 2000-12-01 AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media
US09/726621 2000-12-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008011635A Division JP4972000B2 (ja) 2000-12-01 2008-01-22 Ａｆｍ型のデータ記憶装置

Publications (2)

Publication Number Publication Date
JP2002222930A true JP2002222930A (ja) 2002-08-09
JP2002222930A5 JP2002222930A5 (https=) 2005-04-07

Family

ID=24919338

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001362011A Pending JP2002222930A (ja) 2000-12-01 2001-11-28 Ａｆｍ型のデータ記憶装置
JP2008011635A Expired - Fee Related JP4972000B2 (ja) 2000-12-01 2008-01-22 Ａｆｍ型のデータ記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008011635A Expired - Fee Related JP4972000B2 (ja) 2000-12-01 2008-01-22 Ａｆｍ型のデータ記憶装置

Country Status (5)

Country Link
US (1) US6507552B2 (https=)
EP (1) EP1211680A3 (https=)
JP (2) JP2002222930A (https=)
CN (1) CN1196197C (https=)
HK (1) HK1048712B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012183A (ja) * 2003-06-18 2005-01-13 Macronix Internatl Co Ltd メモリセルのしきい値電圧を調節する方法
US7842557B2 (en) 2005-12-01 2010-11-30 Kabushiki Kaisha Toshiba Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same

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US6980507B2 (en) * 2002-08-30 2005-12-27 Hewlett-Packard Development Company, L.P. Luminescence-phase change based data storage
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US7280456B2 (en) * 2003-07-28 2007-10-09 Intel Corporation Methods and apparatus for determining the state of a variable resistive layer in a material stack
JP4249573B2 (ja) * 2003-09-03 2009-04-02 パイオニア株式会社 位置認識構造を有する記録媒体、位置認識装置および位置認識方法
US6984862B2 (en) * 2003-10-20 2006-01-10 Hewlett-Packard Development Company, L.P. Storage device with charge trapping structure and methods
KR100552701B1 (ko) * 2003-11-24 2006-02-20 삼성전자주식회사 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050243592A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F High density data storage device having eraseable bit cells
WO2005104133A2 (en) * 2004-04-16 2005-11-03 Nanochip, Inc. High density data storage
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US20050243660A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F Methods for erasing bit cells in a high density data storage device
US7002820B2 (en) 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
US7050320B1 (en) * 2004-12-23 2006-05-23 Intel Corporation MEMS probe based memory
KR100682968B1 (ko) * 2005-02-11 2007-02-15 삼성전자주식회사 정보저장장치용 탐침
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7463573B2 (en) * 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US20070008866A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. Methods for writing and reading in a polarity-dependent memory switch media
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
US20090129246A1 (en) * 2007-11-21 2009-05-21 Nanochip, Inc. Environmental management of a probe storage device
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
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US9310396B2 (en) * 2013-03-05 2016-04-12 Alliance For Sustainable Energy, Llc Apparatus and methods of measuring minority carrier lifetime using a liquid probe
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012183A (ja) * 2003-06-18 2005-01-13 Macronix Internatl Co Ltd メモリセルのしきい値電圧を調節する方法
US7842557B2 (en) 2005-12-01 2010-11-30 Kabushiki Kaisha Toshiba Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same

Also Published As

Publication number Publication date
JP4972000B2 (ja) 2012-07-11
US6507552B2 (en) 2003-01-14
CN1196197C (zh) 2005-04-06
US20020067634A1 (en) 2002-06-06
JP2008172252A (ja) 2008-07-24
HK1048712B (zh) 2005-11-18
HK1048712A1 (en) 2003-04-11
CN1367534A (zh) 2002-09-04
EP1211680A3 (en) 2003-08-27
EP1211680A2 (en) 2002-06-05

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