HK1019795A1 - Exposure apparatus - Google Patents

Exposure apparatus

Info

Publication number
HK1019795A1
HK1019795A1 HK99103613A HK99103613A HK1019795A1 HK 1019795 A1 HK1019795 A1 HK 1019795A1 HK 99103613 A HK99103613 A HK 99103613A HK 99103613 A HK99103613 A HK 99103613A HK 1019795 A1 HK1019795 A1 HK 1019795A1
Authority
HK
Hong Kong
Prior art keywords
exposure apparatus
exposure
Prior art date
Application number
HK99103613A
Other languages
English (en)
Inventor
Yutaka Hayashi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1019795A1 publication Critical patent/HK1019795A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK99103613A 1995-04-14 1999-08-20 Exposure apparatus HK1019795A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08940395A JP3506158B2 (ja) 1995-04-14 1995-04-14 露光装置及び走査型露光装置、並びに走査露光方法

Publications (1)

Publication Number Publication Date
HK1019795A1 true HK1019795A1 (en) 2000-02-25

Family

ID=13969683

Family Applications (2)

Application Number Title Priority Date Filing Date
HK99103613A HK1019795A1 (en) 1995-04-14 1999-08-20 Exposure apparatus
HK99103612A HK1019794A1 (en) 1995-04-14 1999-08-20 Exposure apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK99103612A HK1019794A1 (en) 1995-04-14 1999-08-20 Exposure apparatus

Country Status (5)

Country Link
US (1) US6388733B1 (xx)
JP (1) JP3506158B2 (xx)
KR (2) KR100399451B1 (xx)
GB (2) GB2299867B (xx)
HK (2) HK1019795A1 (xx)

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US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JP3283767B2 (ja) * 1996-10-02 2002-05-20 キヤノン株式会社 露光装置およびデバイス製造方法
JPH10209040A (ja) * 1996-11-25 1998-08-07 Nikon Corp 露光装置
JPH10209035A (ja) * 1997-01-23 1998-08-07 Nikon Corp 露光装置
US6490025B1 (en) * 1997-03-17 2002-12-03 Nikon Corporation Exposure apparatus
KR20010030903A (ko) 1997-11-12 2001-04-16 오노 시게오 투영노광장치
KR100250152B1 (ko) * 1997-11-15 2000-03-15 유무성 노광장치
AU1260099A (en) * 1997-11-25 1999-06-15 Nikon Corporation Projection exposure system
EP1098359A4 (en) 1998-06-02 2003-11-19 Nikon Corp SCANNING ALIGNMENT MEMBER, MANUFACTURING METHOD THEREOF, AND DEVICE MANUFACTURING METHOD
AU5529499A (en) 1998-09-14 2000-04-03 Nikon Corporation Exposure apparatus and its manufacturing method, and device producing method
KR20010089453A (ko) 1998-11-18 2001-10-06 시마무라 테루오 노광방법 및 장치
US6727981B2 (en) * 1999-07-19 2004-04-27 Nikon Corporation Illuminating optical apparatus and making method thereof, exposure apparatus and making method thereof, and device manufacturing method
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
TWI264617B (en) * 1999-12-21 2006-10-21 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
US6690450B2 (en) 2000-01-31 2004-02-10 Nikon Corporation Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device
US6621556B2 (en) * 2000-02-28 2003-09-16 Nikon Corporation Projection exposure apparatus and manufacturing and adjusting methods thereof
JP2002122179A (ja) * 2000-10-10 2002-04-26 Ebara Corp 除振装置及びその制御方法
KR100555930B1 (ko) 2001-01-19 2006-03-03 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 디바이스 제조방법 및 그 디바이스
EP1225482A1 (en) * 2001-01-19 2002-07-24 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6538720B2 (en) 2001-02-28 2003-03-25 Silicon Valley Group, Inc. Lithographic tool with dual isolation system and method for configuring the same
SG106667A1 (en) * 2002-02-12 2004-10-29 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6757110B2 (en) * 2002-05-29 2004-06-29 Asml Holding N.V. Catadioptric lithography system and method with reticle stage orthogonal to wafer stage
US20040119964A1 (en) * 2002-12-18 2004-06-24 Nikon Corporation Double isolation fine stage
EP1482363A1 (en) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographic apparatus
EP1491960B1 (en) * 2003-05-30 2012-04-25 ASML Netherlands B.V. Lithographic apparatus
JP5041810B2 (ja) * 2003-09-12 2012-10-03 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学素子操作装置
KR100843958B1 (ko) * 2003-11-27 2008-07-03 동부일렉트로닉스 주식회사 플라즈마 건식 식각장치의 돔 온도 조절 유닛
US20060054432A1 (en) * 2004-09-16 2006-03-16 Yu-Yen Chiu Anti-shock system
JP2006261605A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置及び露光方法
US7936443B2 (en) * 2006-05-09 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4130837B2 (ja) 2006-06-16 2008-08-06 住友重機械工業株式会社 ステージ用反力処理装置
WO2008091371A2 (en) 2006-07-18 2008-07-31 Multiprobe, Inc. Apparatus and method for combined micro-scale and nano-scale c-v,q-v, and i-v testing of semiconductor materials
US8908144B2 (en) 2006-09-27 2014-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100877150B1 (ko) * 2007-04-05 2009-01-09 주식회사 에스에프에이 레이저 가공 시스템 및 레이저 가공 방법
JP4485550B2 (ja) 2007-07-30 2010-06-23 住友重機械工業株式会社 反力処理装置
JP4377424B2 (ja) * 2007-07-31 2009-12-02 住友重機械工業株式会社 反力処理装置
CN102062125B (zh) * 2009-11-17 2013-04-10 上海微电子装备有限公司 一种空气式位置补偿装置
TW201120497A (en) * 2009-12-11 2011-06-16 Asia Optical Co Inc Optical device and lens collision preventing method thereof
CN102193325B (zh) * 2010-03-19 2013-04-10 上海微电子装备有限公司 主动隔震装置的控制系统
US9829298B2 (en) 2011-06-24 2017-11-28 Pi Tape Texas, Llc Optical readout device to provide visual information
US20120330607A1 (en) * 2011-06-24 2012-12-27 Pi Tape Corporation Digital readout measurement device
US8800998B2 (en) * 2011-12-30 2014-08-12 Multiprobe, Inc. Semiconductor wafer isolated transfer chuck
CN103809384B (zh) * 2012-11-12 2016-03-09 上海微电子装备有限公司 工件台与掩模台公用的平衡质量系统及光刻机
US20230043353A1 (en) * 2021-08-04 2023-02-09 Onto Innovation, Inc. Multiple camera apparatus for photolithographic processing

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Publication number Priority date Publication date Assignee Title
DE2050590C2 (de) * 1970-10-15 1982-06-16 Ibm Deutschland Gmbh, 7000 Stuttgart Projektionseinrichtung
US4370054A (en) 1981-04-02 1983-01-25 Canon Kabushiki Kaisha Projection exposure apparatus
JPS58116735A (ja) 1981-12-29 1983-07-12 Canon Inc 投影焼付方法
JPS59101830A (ja) * 1982-12-01 1984-06-12 Canon Inc 転写装置
JPS6119129A (ja) * 1984-07-05 1986-01-28 Nippon Kogaku Kk <Nikon> 投影光学装置
IL77057A (en) 1985-03-26 1990-03-19 Wright Barry Corp Active vibration isolation system
JPH0622192B2 (ja) 1985-04-25 1994-03-23 キヤノン株式会社 表示パネル製造方法
US4748477A (en) 1985-04-30 1988-05-31 Canon Kabushiki Kaisha Exposure apparatus
US4851882A (en) * 1985-12-06 1989-07-25 Canon Kabushiki Kaisha Illumination optical system
US4724466A (en) * 1986-01-17 1988-02-09 Matsushita Electric Industrial Co., Ltd. Exposure apparatus
US4805000A (en) * 1986-01-17 1989-02-14 Matsushita Electric Industrial Co., Ltd. Exposure apparatus
US4803712A (en) 1987-01-20 1989-02-07 Hitachi, Ltd. X-ray exposure system
JPS6437837A (en) 1987-08-04 1989-02-08 Canon Kk Semiconductor exposure device
US4989031A (en) 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
FR2663130B1 (fr) * 1990-06-08 1994-12-09 Nippon Seiko Kk Dispositif d'exposition par projection.
US5187519A (en) 1990-10-05 1993-02-16 Canon Kabushiki Kaisha Exposure apparatus having mount means to suppress vibrations
NL9100202A (nl) 1991-02-05 1992-09-01 Asm Lithography Bv Lithografische inrichting met een hangende objecttafel.
JP2862385B2 (ja) 1991-03-13 1999-03-03 キヤノン株式会社 露光装置
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP3304378B2 (ja) * 1992-02-25 2002-07-22 株式会社ニコン 投影露光装置、及び素子製造方法
JP3277581B2 (ja) * 1993-02-01 2002-04-22 株式会社ニコン ステージ装置および露光装置
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
KR100399812B1 (ko) 1994-10-11 2003-12-01 가부시키가이샤 니콘 스테이지용진동방지장치

Also Published As

Publication number Publication date
KR960038498A (ko) 1996-11-21
GB9918510D0 (en) 1999-10-06
US6388733B1 (en) 2002-05-14
GB9607575D0 (en) 1996-06-12
KR100399451B1 (ko) 2003-12-11
KR100399452B1 (ko) 2003-09-29
GB2299867A (en) 1996-10-16
GB2299867B (en) 1999-10-13
HK1019794A1 (en) 2000-02-25
JPH08288198A (ja) 1996-11-01
JP3506158B2 (ja) 2004-03-15

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090412