JP4377424B2 - 反力処理装置 - Google Patents
反力処理装置 Download PDFInfo
- Publication number
- JP4377424B2 JP4377424B2 JP2007199548A JP2007199548A JP4377424B2 JP 4377424 B2 JP4377424 B2 JP 4377424B2 JP 2007199548 A JP2007199548 A JP 2007199548A JP 2007199548 A JP2007199548 A JP 2007199548A JP 4377424 B2 JP4377424 B2 JP 4377424B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction force
- surface plate
- stage
- height
- max
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Atmospheric Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Details Of Measuring And Other Instruments (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
hmax=(Ymax・J・Kp)/(N・MSLIDER・fr)
但し、Ymax:ステージの位置偏差の許容値
J:移動ステージ装置の慣性モーメント
Kp:制御ゲイン
N:移動ステージ装置の重心の高さからステージの位置の計測点の高さまでの距離
MSLIDER:ステージの質量
fr:反力
但し、Ymax:ステージの位置偏差の許容値
J:移動ステージ装置の慣性モーメント
Kp:制御ゲイン
N:移動ステージ装置の重心の高さからステージの位置の計測点の高さまでの距離
MSLIDER:ステージの質量
fr:反力
Claims (4)
- 基礎に除振手段を介して設置された定盤の盤面上でステージが移動する移動ステージ装置に設けられ、前記ステージの移動で前記定盤に生じる反力を処理するための反力処理装置であって、
前記反力を低減する水平方向の力を前記定盤に印加するための印加手段を備え、
前記印加手段は、前記定盤が被さるように当該定盤の盤面よりも前記基礎側に配置されていることを特徴とする反力処理装置。 - 前記反力が前記定盤に作用する作用点の高さと前記反力を低減する力が前記定盤に作用する作用点の高さとの差hは、次式で表せる許容値hmax以下となっていることを特徴とする請求項1記載の反力処理装置。
hmax=(Ymax・J・Kp)/(N・MSLIDER・fr)
但し、Ymax:ステージの位置偏差の許容値
J:移動ステージ装置の慣性モーメント
Kp:制御ゲイン
N:移動ステージ装置の重心の高さからステージの位置の計測点の高さまでの距離
MSLIDER:ステージの質量
fr:反力 - 前記印加手段は、高さ調整可能とされていることを特徴とする請求項1又は2記載の反力処理装置。
- 前記印加手段は、前記定盤に取り付けられた可動子と、当該可動子に非接触で前記基礎に取り付けられた固定子と、を有し、前記反力を低減する力が前記固定子から前記可動子に印加されるように構成されていることを特徴とする請求項1〜3の何れか一項記載の反力処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007199548A JP4377424B2 (ja) | 2007-07-31 | 2007-07-31 | 反力処理装置 |
TW097128432A TWI390362B (zh) | 2007-07-31 | 2008-07-25 | Reaction force processing device |
US12/219,847 US7944166B2 (en) | 2007-07-31 | 2008-07-29 | Reaction force cancel system |
KR1020080074532A KR100987939B1 (ko) | 2007-07-31 | 2008-07-30 | 반력처리장치 |
CN2008101294971A CN101359183B (zh) | 2007-07-31 | 2008-07-31 | 反力处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007199548A JP4377424B2 (ja) | 2007-07-31 | 2007-07-31 | 反力処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009038122A JP2009038122A (ja) | 2009-02-19 |
JP4377424B2 true JP4377424B2 (ja) | 2009-12-02 |
Family
ID=40331655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007199548A Expired - Fee Related JP4377424B2 (ja) | 2007-07-31 | 2007-07-31 | 反力処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7944166B2 (ja) |
JP (1) | JP4377424B2 (ja) |
KR (1) | KR100987939B1 (ja) |
CN (1) | CN101359183B (ja) |
TW (1) | TWI390362B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4898537B2 (ja) * | 2007-04-18 | 2012-03-14 | アイシン・エィ・ダブリュ株式会社 | ステータ位置調整方法 |
WO2014010233A1 (ja) * | 2012-07-09 | 2014-01-16 | 株式会社ニコン | 駆動システム及び駆動方法、並びに露光装置及び露光方法 |
KR20180029145A (ko) | 2016-09-09 | 2018-03-20 | 삼성전자주식회사 | 기판 처리 장치 |
KR102653016B1 (ko) | 2018-09-18 | 2024-03-29 | 삼성전자주식회사 | 척 구동 장치 및 기판 처리 장치 |
JP2024039768A (ja) * | 2022-09-12 | 2024-03-25 | キヤノン株式会社 | ステージ装置、パターン形成装置、及び物品の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3506158B2 (ja) | 1995-04-14 | 2004-03-15 | 株式会社ニコン | 露光装置及び走査型露光装置、並びに走査露光方法 |
JP3286201B2 (ja) | 1997-03-07 | 2002-05-27 | キヤノン株式会社 | 能動的除振装置 |
US6028376A (en) * | 1997-04-22 | 2000-02-22 | Canon Kabushiki Kaisha | Positioning apparatus and exposure apparatus using the same |
US5959427A (en) * | 1998-03-04 | 1999-09-28 | Nikon Corporation | Method and apparatus for compensating for reaction forces in a stage assembly |
JPH11317350A (ja) | 1998-05-06 | 1999-11-16 | Canon Inc | ステージ装置、露光装置およびデバイス製造方法 |
JP3825921B2 (ja) | 1998-07-23 | 2006-09-27 | キヤノン株式会社 | 走査露光装置およびデバイス製造方法 |
JP2001148341A (ja) * | 1999-11-19 | 2001-05-29 | Nikon Corp | 露光装置 |
EP1128216B1 (en) * | 2000-02-21 | 2008-11-26 | Sharp Kabushiki Kaisha | Precision stage device |
JP4362862B2 (ja) * | 2003-04-01 | 2009-11-11 | 株式会社ニコン | ステージ装置及び露光装置 |
KR101157003B1 (ko) * | 2004-09-30 | 2012-06-21 | 가부시키가이샤 니콘 | 투영 광학 디바이스 및 노광 장치 |
-
2007
- 2007-07-31 JP JP2007199548A patent/JP4377424B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-25 TW TW097128432A patent/TWI390362B/zh not_active IP Right Cessation
- 2008-07-29 US US12/219,847 patent/US7944166B2/en not_active Expired - Fee Related
- 2008-07-30 KR KR1020080074532A patent/KR100987939B1/ko active IP Right Grant
- 2008-07-31 CN CN2008101294971A patent/CN101359183B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20090013104A (ko) | 2009-02-04 |
KR100987939B1 (ko) | 2010-10-18 |
US7944166B2 (en) | 2011-05-17 |
JP2009038122A (ja) | 2009-02-19 |
CN101359183A (zh) | 2009-02-04 |
TW200921286A (en) | 2009-05-16 |
TWI390362B (zh) | 2013-03-21 |
CN101359183B (zh) | 2011-10-26 |
US20090284207A1 (en) | 2009-11-19 |
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