HK1008580A1 - High precision voltage regulation circuit for programming multilevel flash memory. - Google Patents

High precision voltage regulation circuit for programming multilevel flash memory.

Info

Publication number
HK1008580A1
HK1008580A1 HK98108797A HK98108797A HK1008580A1 HK 1008580 A1 HK1008580 A1 HK 1008580A1 HK 98108797 A HK98108797 A HK 98108797A HK 98108797 A HK98108797 A HK 98108797A HK 1008580 A1 HK1008580 A1 HK 1008580A1
Authority
HK
Hong Kong
Prior art keywords
flash memory
high precision
voltage regulation
regulation circuit
precision voltage
Prior art date
Application number
HK98108797A
Other languages
English (en)
Inventor
Kerry Tedrow
Stephen Keeney
Albert Fazio
Gregory Atwood
Johnny Javanifard
Kenneth Wojciechowski
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1008580A1 publication Critical patent/HK1008580A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
HK98108797A 1994-06-01 1998-06-29 High precision voltage regulation circuit for programming multilevel flash memory. HK1008580A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/252,585 US5497119A (en) 1994-06-01 1994-06-01 High precision voltage regulation circuit for programming multilevel flash memory
PCT/US1995/005588 WO1995033232A1 (en) 1994-06-01 1995-05-04 High precision voltage regulation circuit for programming multilevel flash memory

Publications (1)

Publication Number Publication Date
HK1008580A1 true HK1008580A1 (en) 1999-05-14

Family

ID=22956639

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98108797A HK1008580A1 (en) 1994-06-01 1998-06-29 High precision voltage regulation circuit for programming multilevel flash memory.

Country Status (9)

Country Link
US (2) US5497119A (xx)
EP (1) EP0813705B1 (xx)
KR (1) KR100363749B1 (xx)
CN (1) CN1267800C (xx)
AU (1) AU2434595A (xx)
BR (1) BR9507833A (xx)
DE (1) DE69533858T2 (xx)
HK (1) HK1008580A1 (xx)
WO (1) WO1995033232A1 (xx)

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EP0813705A1 (en) 1997-12-29
EP0813705A4 (en) 1998-06-17
WO1995033232A1 (en) 1995-12-07
US5546042A (en) 1996-08-13
KR100363749B1 (ko) 2003-02-11
BR9507833A (pt) 1997-09-16
AU2434595A (en) 1995-12-21
EP0813705B1 (en) 2004-12-15
DE69533858D1 (de) 2005-01-20
US5497119A (en) 1996-03-05
CN1267800C (zh) 2006-08-02
CN1150486A (zh) 1997-05-21
DE69533858T2 (de) 2005-10-06

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