HK1002325A1 - Organic chlorides showing a reduced effect upon the destruction of the ozone layer for use during silicon thermal oxidation and furnace tube cleaning - Google Patents

Organic chlorides showing a reduced effect upon the destruction of the ozone layer for use during silicon thermal oxidation and furnace tube cleaning

Info

Publication number
HK1002325A1
HK1002325A1 HK98101336A HK98101336A HK1002325A1 HK 1002325 A1 HK1002325 A1 HK 1002325A1 HK 98101336 A HK98101336 A HK 98101336A HK 98101336 A HK98101336 A HK 98101336A HK 1002325 A1 HK1002325 A1 HK 1002325A1
Authority
HK
Hong Kong
Prior art keywords
destruction
showing
thermal oxidation
use during
furnace tube
Prior art date
Application number
HK98101336A
Other languages
English (en)
Inventor
Andre Lagendijk
Arthur Kenneth Hochberg
David Allen Roberts
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25410134&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1002325(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of HK1002325A1 publication Critical patent/HK1002325A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
HK98101336A 1992-06-15 1998-02-20 Organic chlorides showing a reduced effect upon the destruction of the ozone layer for use during silicon thermal oxidation and furnace tube cleaning HK1002325A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/898,857 US5288662A (en) 1992-06-15 1992-06-15 Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning

Publications (1)

Publication Number Publication Date
HK1002325A1 true HK1002325A1 (en) 1998-08-14

Family

ID=25410134

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101336A HK1002325A1 (en) 1992-06-15 1998-02-20 Organic chlorides showing a reduced effect upon the destruction of the ozone layer for use during silicon thermal oxidation and furnace tube cleaning

Country Status (7)

Country Link
US (2) US5288662A (xx)
EP (1) EP0574809B1 (xx)
JP (1) JPH0799743B2 (xx)
KR (1) KR970000421B1 (xx)
DE (1) DE69300544T2 (xx)
HK (1) HK1002325A1 (xx)
TW (1) TW224446B (xx)

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CN1244891C (zh) * 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
EP0612102B1 (en) * 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Process for the fabrication of a crystallised semiconductor layer
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JP3450376B2 (ja) 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
JP3417665B2 (ja) * 1994-07-07 2003-06-16 株式会社東芝 半導体装置の製造方法
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5599425A (en) * 1995-02-06 1997-02-04 Air Products And Chemicals, Inc. Predecomposition of organic chlorides for silicon processing
US5704986A (en) * 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100398621B1 (ko) * 1996-12-31 2003-12-31 주식회사 하이닉스반도체 반도체소자의 게이트산화막 제조방법
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6387827B1 (en) 1997-03-28 2002-05-14 Imec (Vzw) Method for growing thin silicon oxides on a silicon substrate using chlorine precursors
US6501094B1 (en) 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
US6303522B1 (en) 1997-11-19 2001-10-16 Imec Vzw Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor
US5990014A (en) * 1998-01-07 1999-11-23 Memc Electronic Materials, Inc. In situ wafer cleaning process
US6271153B1 (en) * 1998-07-22 2001-08-07 Micron Technology, Inc. Semiconductor processing method and trench isolation method
WO2002003438A1 (en) * 2000-07-06 2002-01-10 Mattson Thermal Products Inc. Method and apparatus for rapid thermal processing (rtp) of semiconductor wafers
JP3967199B2 (ja) * 2002-06-04 2007-08-29 シャープ株式会社 半導体装置及びその製造方法
US7357138B2 (en) * 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040014327A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040011380A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7055263B2 (en) * 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
US7531464B2 (en) * 2005-12-20 2009-05-12 Texas Instruments Incorporated Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon
US8246751B2 (en) 2010-10-01 2012-08-21 General Electric Company Pulsed detonation cleaning systems and methods

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US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
JPS63269548A (ja) * 1987-04-27 1988-11-07 Seiko Instr & Electronics Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0574809A1 (en) 1993-12-22
KR940001312A (ko) 1994-01-11
JPH0799743B2 (ja) 1995-10-25
EP0574809B1 (en) 1995-09-27
DE69300544T2 (de) 1996-03-21
US5288662A (en) 1994-02-22
TW224446B (xx) 1994-06-01
JPH0669194A (ja) 1994-03-11
DE69300544D1 (de) 1995-11-02
US5298075A (en) 1994-03-29
KR970000421B1 (ko) 1997-01-09

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Legal Events

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PE Patent expired

Effective date: 20130607