KR940001312A - 실리콘 산화 반응 및 노 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물 - Google Patents

실리콘 산화 반응 및 노 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물 Download PDF

Info

Publication number
KR940001312A
KR940001312A KR1019930010390A KR930010390A KR940001312A KR 940001312 A KR940001312 A KR 940001312A KR 1019930010390 A KR1019930010390 A KR 1019930010390A KR 930010390 A KR930010390 A KR 930010390A KR 940001312 A KR940001312 A KR 940001312A
Authority
KR
South Korea
Prior art keywords
dichloroethylene
chlorohydrocarbon
cis
trans
furnace tube
Prior art date
Application number
KR1019930010390A
Other languages
English (en)
Other versions
KR970000421B1 (ko
Inventor
라겐디크 안드레
케네스 호크버그 아더
알렌 로버츠 데이비드
Original Assignee
윌리암 에프. 마쉬
에어 프로덕츠 앤드 케미칼스 인코오포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25410134&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR940001312(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 윌리암 에프. 마쉬, 에어 프로덕츠 앤드 케미칼스 인코오포레이티드 filed Critical 윌리암 에프. 마쉬
Publication of KR940001312A publication Critical patent/KR940001312A/ko
Application granted granted Critical
Publication of KR970000421B1 publication Critical patent/KR970000421B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 실리콘 또는 튜브를 700℃이상의 온도로 가열하면서 일반식 CXHXClX(식중, X는 2,3 또는 4임)의 클로로탄화수소와 산소를 함유한 담체가스를 실리콘 또는 튜브 상으로 유동시킴으로써, 반도체 제조시 사용된 노 튜브를 세척하거나 실리콘을 열산화하는 방법에 관한 것이다. 클로로탄화수소는 일정온도에서 즉시 완전 산화되는 것으로 선택된다.

Description

실리콘 산화 반응 및 노(爐) 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 800℃ TCA/O2반응 동안 원자질량 단위에 대한 상대적 진폭의 로그값을 나타낸 것이다.
제2도는 800℃ DCM/O2반응 동안 원자질량 단위에 대한 상대적 진폭의 로그값을 나타낸 것이다.
제3도는 800℃ TDCE/O2반응 동안 원자질량 단위에 대한 상대적 진폭의 로그값을 나타낸 것이다.

Claims (10)

  1. 실리콘 제품을 반응기 내에서 700℃ 이상으로 가열하는 단계; 일정한 조건하에서 즉시 완전 산화되는 것을 기준하여 선택된 일반식 CXHXClX(식중, X는 2,3 또는 4임)의 클로로탄화수소와 산소의 가스상 혼합물을 상기 반응기내로 유입시키는 단계; 및 상기 산화반응이 완료될 때까지 상기 실리콘 제품을 상기 가스상 혼합물에 계속적으로 노출시키는 단계를 포함하는, 실리콘 제품을 열산화시키는 방법.
  2. 제1항에 있어서, 상기 클로로탄화수소가 트랜스-디클로로에틸렌인 방법.
  3. 제1항에 있어서, 상기 클로로탄화수소가 시스-디클로로에틸렌인 방법.
  4. 제1항에 있어서, 상기 클로로탄화수소가 1,1-디클로로에틸렌인 방법.
  5. 제1항에 있어서, 상기 클로로탄화수소가 트랜스-디클로로에틸렌, 시스-디클로로에틸렌, 1,1-디클로로에틸렌 및 이들의 혼합물인 군중에서 선택되는 방법.
  6. 노 튜브를 800℃이상의 온도로 가열하는 단계; 일정한 조건하에서 즉시 완전산화되는 것을 기준하여 선택된 일반식 CXHXClX(식중, X는 2,3 또는 4임)의 클로로탄화수소와 산소의 담체가스중의 가스상 혼합물을 상기 튜브에 통과시키는 단계; 및 상기 튜브가 충분히 깨끗해질 때까지 상기 튜브를 상기 담체가스 중의 상기 혼합물과 접한 상태로 상기 온도에서 유지하는 단계를 포함하는, 화학증기 증착법를 사용하여 반도체 장치의 제조에 사용된 노 튜브를 세척하는 방법.
  7. 제6항에 있어서, 상기 클로로탄화수소가 트랜스-디클로로에틸렌인 방법.
  8. 제6항에 있어서, 상기 클로로탄화수소가 시스-디클로로에틸렌인 방법.
  9. 제6항에 있어서, 상기 클로로탄화수소가 1,1-디클로로에틸렌인 방법.
  10. 제6항에 있어서, 상기 클로로탄화수소가 트랜스-디클로로에틸렌, 시스-디클로로에틸렌, 1,1-디클로로에틸렌 및 이들의 혼합물로 이루어진 군중에서 선택되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930010390A 1992-06-15 1993-06-09 실리콘 산화 반응 및 노(爐) 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물 KR970000421B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7/898,857 1992-06-15
US07/898,857 US5288662A (en) 1992-06-15 1992-06-15 Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning

Publications (2)

Publication Number Publication Date
KR940001312A true KR940001312A (ko) 1994-01-11
KR970000421B1 KR970000421B1 (ko) 1997-01-09

Family

ID=25410134

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930010390A KR970000421B1 (ko) 1992-06-15 1993-06-09 실리콘 산화 반응 및 노(爐) 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물

Country Status (7)

Country Link
US (2) US5288662A (ko)
EP (1) EP0574809B1 (ko)
JP (1) JPH0799743B2 (ko)
KR (1) KR970000421B1 (ko)
DE (1) DE69300544T2 (ko)
HK (1) HK1002325A1 (ko)
TW (1) TW224446B (ko)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1244891C (zh) * 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
EP0612102B1 (en) * 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Process for the fabrication of a crystallised semiconductor layer
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JP3450376B2 (ja) 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
JP3417665B2 (ja) * 1994-07-07 2003-06-16 株式会社東芝 半導体装置の製造方法
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5599425A (en) * 1995-02-06 1997-02-04 Air Products And Chemicals, Inc. Predecomposition of organic chlorides for silicon processing
US5704986A (en) * 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100398621B1 (ko) * 1996-12-31 2003-12-31 주식회사 하이닉스반도체 반도체소자의 게이트산화막 제조방법
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6387827B1 (en) 1997-03-28 2002-05-14 Imec (Vzw) Method for growing thin silicon oxides on a silicon substrate using chlorine precursors
US6501094B1 (en) 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
US6303522B1 (en) 1997-11-19 2001-10-16 Imec Vzw Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor
US5990014A (en) * 1998-01-07 1999-11-23 Memc Electronic Materials, Inc. In situ wafer cleaning process
US6271153B1 (en) * 1998-07-22 2001-08-07 Micron Technology, Inc. Semiconductor processing method and trench isolation method
WO2002003438A1 (en) * 2000-07-06 2002-01-10 Mattson Thermal Products Inc. Method and apparatus for rapid thermal processing (rtp) of semiconductor wafers
JP3967199B2 (ja) * 2002-06-04 2007-08-29 シャープ株式会社 半導体装置及びその製造方法
US7357138B2 (en) * 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040014327A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US20040011380A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7055263B2 (en) * 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
US7531464B2 (en) * 2005-12-20 2009-05-12 Texas Instruments Incorporated Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon
US8246751B2 (en) 2010-10-01 2012-08-21 General Electric Company Pulsed detonation cleaning systems and methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
JPS63269548A (ja) * 1987-04-27 1988-11-07 Seiko Instr & Electronics Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0574809A1 (en) 1993-12-22
HK1002325A1 (en) 1998-08-14
JPH0799743B2 (ja) 1995-10-25
EP0574809B1 (en) 1995-09-27
DE69300544T2 (de) 1996-03-21
US5288662A (en) 1994-02-22
TW224446B (ko) 1994-06-01
JPH0669194A (ja) 1994-03-11
DE69300544D1 (de) 1995-11-02
US5298075A (en) 1994-03-29
KR970000421B1 (ko) 1997-01-09

Similar Documents

Publication Publication Date Title
KR940001312A (ko) 실리콘 산화 반응 및 노 튜브 세척시 사용하기 위한 저-오존 파괴성 유기 염화물
Windawi et al. Catalytic destruction of halogenated volatile organic compounds
US4059676A (en) Decomposition of halogenated organic compounds
US4059675A (en) Decomposition of halogenated organic compounds
MY114785A (en) Catalytic vent gas treatment system for abatement of volatile chemical emissions
KR900701709A (ko) 포화탄화수소 사슬의 산화
BR9205866A (pt) Processo de desnitrificação
DE3764844D1 (de) Mittel zur verhinderung von ablagerungen bei thermischen crackprozessen.
KR900701668A (ko) 폐수의 촉매처리방법
KR920006030A (ko) 큰 비 표면인 중금속 탄화물의 표면을 활성화 하기 위한 방법
US5599425A (en) Predecomposition of organic chlorides for silicon processing
KR890014163A (ko) 잔류 가스내에 존재하는 히드라이드의 파괴방법 및 그것을 위한 촉매
KR920008876A (ko) Cvd실리콘 산화질화막의 제조방법
JPS56118913A (en) Preparation of carbon fiber growing in vapor phase in high yield
KR900001612A (ko) 산화 비스무트의 화학 증착방법
DE50111320D1 (de) Verfahren zur entfernung von kohlenwasserstoffspuren aus gasströmen
KR930017856A (ko) 포화 탄화수소류의 암모산화 방법
DK1042051T3 (da) Fremgangsmåde til oxidation af gasformige halogenerede og ikke halogenerede organiske forbindelser
Vernikovskaya et al. Mathematical modeling of unsteady-state operation taking into account adsorption and chemisorption processes on the catalyst pellet
FI920655A (fi) Syntesprocess av 1,2-dikloretan genom att oxiklorera etylen med hjaelp av koltetraklorid
DE3578384D1 (de) Katalysatorherstellung.
KR960001166A (ko) 니켈 및 철을 주성분으로 하는 초합금으로 된 금속 재료에 대한 부동화 방법
KR900017144A (ko) 콜드웰 cvd 반응기에서의 티타늄 질화물 증착장치 및 그 방법
RU93039134A (ru) Способ обезвреживания газовых выбросов от паров органических соединений и устройство для его реализации
ES454902A1 (es) Metodo para tratar una corriente gaseosa que contiene hidro-carburo de c2-c4 halogenado.

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121227

Year of fee payment: 17

EXPY Expiration of term