HK1000811A1 - Magnetoelectric transducer and process for producing the same - Google Patents

Magnetoelectric transducer and process for producing the same

Info

Publication number
HK1000811A1
HK1000811A1 HK97102390A HK97102390A HK1000811A1 HK 1000811 A1 HK1000811 A1 HK 1000811A1 HK 97102390 A HK97102390 A HK 97102390A HK 97102390 A HK97102390 A HK 97102390A HK 1000811 A1 HK1000811 A1 HK 1000811A1
Authority
HK
Hong Kong
Prior art keywords
producing
same
magnetoelectric transducer
magnetoelectric
transducer
Prior art date
Application number
HK97102390A
Other languages
English (en)
Inventor
Ichiro Shibasaki
Takashi Ito
Yuichi Kanayama
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Publication of HK1000811A1 publication Critical patent/HK1000811A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
HK97102390A 1990-04-04 1997-12-11 Magnetoelectric transducer and process for producing the same HK1000811A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2088190A JP2557998B2 (ja) 1990-04-04 1990-04-04 ＩｎＡｓホール効果素子

Publications (1)

Publication Number Publication Date
HK1000811A1 true HK1000811A1 (en) 1998-05-01

Family

ID=13935986

Family Applications (1)

Application Number Title Priority Date Filing Date
HK97102390A HK1000811A1 (en) 1990-04-04 1997-12-11 Magnetoelectric transducer and process for producing the same

Country Status (5)

Country Link
US (1) US5198795A (xx)
EP (1) EP0450601B1 (xx)
JP (1) JP2557998B2 (xx)
DE (1) DE69107647T2 (xx)
HK (1) HK1000811A1 (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002479A1 (en) * 1991-07-16 1993-02-04 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor sensor and its manufacturing method
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
JPH06162450A (ja) * 1992-11-19 1994-06-10 Matsushita Electric Ind Co Ltd 磁気抵抗効果型ヘッド及びその製造方法
US6180419B1 (en) * 1996-09-19 2001-01-30 National Science Council Method of manufacturing magnetic field transducer with improved sensitivity by plating a magnetic film on the back of the substrate
US5831513A (en) * 1997-02-04 1998-11-03 United Microelectronics Corp. Magnetic field sensing device
US5883567A (en) * 1997-10-10 1999-03-16 Analog Devices, Inc. Packaged integrated circuit with magnetic flux concentrator
WO2000008695A1 (fr) * 1998-08-07 2000-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Capteur magnetique et son procede de production
JP4764311B2 (ja) * 1998-08-07 2011-08-31 旭化成株式会社 半導体磁気抵抗装置
JP2002026419A (ja) * 2000-07-07 2002-01-25 Sanken Electric Co Ltd 磁電変換装置
WO2003032410A1 (fr) 2001-10-01 2003-04-17 Asahi Kasei Microsystems Co., Ltd. Dispositif a effet hall et capteur magnetique
US7388268B2 (en) 2002-01-15 2008-06-17 Asahi Kasei Electronics Co., Ltd. Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
EP1580568A3 (en) * 2004-03-24 2012-09-19 Yamaha Corporation Semiconductor device, magnetic sensor, and magnetic sensor unit
WO2007069680A1 (ja) 2005-12-16 2007-06-21 Asahi Kasei Emd Corporation 位置検出装置
US9000763B2 (en) * 2011-02-28 2015-04-07 Infineon Technologies Ag 3-D magnetic sensor
JP2013197386A (ja) * 2012-03-21 2013-09-30 Asahi Kasei Electronics Co Ltd ホール素子
JP6586682B2 (ja) * 2015-09-01 2019-10-09 ローム株式会社 磁電変換素子およびその製造方法
JP2017166927A (ja) * 2016-03-15 2017-09-21 エスアイアイ・セミコンダクタ株式会社 磁気センサおよびその製造方法
JP6868963B2 (ja) 2016-03-15 2021-05-12 エイブリック株式会社 磁気センサおよびその製造方法
CN106653998A (zh) * 2016-08-23 2017-05-10 苏州矩阵光电有限公司 一种霍尔元件及其制备方法
US10760981B2 (en) * 2016-11-18 2020-09-01 Asahi Kasei Microdevices Corporation Hall sensor
US10128434B2 (en) * 2016-12-09 2018-11-13 Rohm Co., Ltd. Hall element module
EP3942259B1 (de) * 2019-03-20 2023-05-17 Vitesco Technologies GmbH Winkelerfassungseinrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617975A (en) * 1969-10-13 1971-11-02 Us Navy Two-layer magnetoresistors
US4296424A (en) * 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
JPS577985A (en) * 1980-06-18 1982-01-16 Asahi Chem Ind Co Ltd Magnetoelectricity converting element and manufacture thereof
GB2081505A (en) * 1980-08-05 1982-02-17 Itt Ind Ltd Hall effect device
US4584552A (en) * 1982-03-26 1986-04-22 Pioneer Electronic Corporation Hall element with improved composite substrate
JPS5948970A (ja) * 1982-09-13 1984-03-21 Pioneer Electronic Corp 磁電変換素子
JPH06105802B2 (ja) * 1984-07-09 1994-12-21 旭化成工業株式会社 磁電変換素子
NL188488C (nl) * 1985-05-10 1992-07-01 Asahi Chemical Ind Magneto-elektrische transducent.
US4926154A (en) * 1988-12-23 1990-05-15 General Motors Corporation Indium arsenide magnetoresistor
US4939456A (en) * 1988-12-23 1990-07-03 General Motors Corporation Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet
US4978938A (en) * 1988-12-23 1990-12-18 General Motors Corporation Magnetoresistor

Also Published As

Publication number Publication date
JPH03288483A (ja) 1991-12-18
EP0450601B1 (en) 1995-03-01
JP2557998B2 (ja) 1996-11-27
US5198795A (en) 1993-03-30
EP0450601A1 (en) 1991-10-09
DE69107647T2 (de) 1995-12-21
DE69107647D1 (de) 1995-04-06

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Legal Events

Date Code Title Description
PF Patent in force
PE Patent expired

Effective date: 20110402