GR3005727T3 - - Google Patents

Info

Publication number
GR3005727T3
GR3005727T3 GR920402050T GR920402050T GR3005727T3 GR 3005727 T3 GR3005727 T3 GR 3005727T3 GR 920402050 T GR920402050 T GR 920402050T GR 920402050 T GR920402050 T GR 920402050T GR 3005727 T3 GR3005727 T3 GR 3005727T3
Authority
GR
Greece
Prior art keywords
polysilicon
layers
doped silicon
silicon region
etch
Prior art date
Application number
GR920402050T
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GR3005727T3 publication Critical patent/GR3005727T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Air Bags (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Installation Of Indoor Wiring (AREA)
  • Multi-Conductor Connections (AREA)
  • Connector Housings Or Holding Contact Members (AREA)
GR920402050T 1986-12-17 1992-09-17 GR3005727T3 (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94415086A 1986-12-17 1986-12-17

Publications (1)

Publication Number Publication Date
GR3005727T3 true GR3005727T3 (el) 1993-06-07

Family

ID=25480890

Family Applications (1)

Application Number Title Priority Date Filing Date
GR920402050T GR3005727T3 (el) 1986-12-17 1992-09-17

Country Status (6)

Country Link
EP (1) EP0272051B1 (el)
JP (1) JPH0752751B2 (el)
AT (1) ATE80750T1 (el)
DE (1) DE3781778T2 (el)
ES (1) ES2046209T3 (el)
GR (1) GR3005727T3 (el)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202054A (ja) * 1989-01-31 1990-08-10 Texas Instr Japan Ltd 半導体装置及びその製造方法
NL9100094A (nl) * 1991-01-21 1992-08-17 Koninkl Philips Electronics Nv Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
GB9219268D0 (en) * 1992-09-11 1992-10-28 Inmos Ltd Semiconductor device incorporating a contact and manufacture thereof
WO2003023847A2 (en) * 2001-09-13 2003-03-20 Koninklijke Philips Electronics N.V. Integrated circuit, portable device and method for manufacturing an integrated circuit
DE102008045037B4 (de) * 2008-08-29 2010-12-30 Advanced Micro Devices, Inc., Sunnyvale Statischer RAM-Zellenaufbau und Mehrfachkontaktschema zum Anschluss von Doppelkanaltransistoren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842257A (ja) * 1981-09-07 1983-03-11 Toshiba Corp 半導体装置
JPS59171140A (ja) * 1983-03-17 1984-09-27 Nec Corp 半導体装置
US4663831A (en) * 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers

Also Published As

Publication number Publication date
JPH0752751B2 (ja) 1995-06-05
ES2046209T3 (es) 1995-04-01
EP0272051B1 (en) 1992-09-16
EP0272051A3 (en) 1989-02-01
ATE80750T1 (de) 1992-10-15
DE3781778D1 (de) 1992-10-22
DE3781778T2 (de) 1993-01-28
EP0272051A2 (en) 1988-06-22
JPS63164359A (ja) 1988-07-07

Similar Documents

Publication Publication Date Title
JPS6421967A (en) Semiconductor device and manufacture thereof
EP0052989A3 (en) Method of fabricating a semiconductor device
WO1986003620A3 (en) Process for forming diffusion regions in a semiconductor substrate
EP0365107A3 (en) Manufacturing method for vertically conductive semiconductor devices
EP0029552A3 (en) Method for producing a semiconductor device
GR3005727T3 (el)
TW288205B (en) Process of fabricating high-density flat cell mask read only memory
JPS6472551A (en) Manufacture of trench capacitor
JPS6418253A (en) Semiconductor memory cell and its manufacture
JPS5691470A (en) Semiconductor
EP0078890A3 (en) Method of fabrication of dielectrically isolated cmos device with an isolated slot
JPS57211775A (en) Semiconductor device and manufacture thereof
JPS5769778A (en) Semiconductor device
JPS6420663A (en) Manufacture of semiconductor device
JPS5764965A (en) Semiconductor device
JPS5512754A (en) Semiconductor device manufacturing method
JPS54143076A (en) Semiconductor device and its manufacture
JPS55162270A (en) Semiconductor device
JPS6449252A (en) Manufacture of groove-shaped capacitor
JPS55132062A (en) Semiconductor memory device
JPS6489370A (en) Semiconductor storage device
JPS647555A (en) Semiconductor device and manufacture thereof
JPS56111217A (en) Preparation of semiconductor device
JPS558015A (en) Mos type semiconductor device manufacturing method
JPS6428950A (en) Semiconductor storage device and manufacture thereof