GR1000557B - Μεθοδος εκλεκτικου κατα περιοχην σχηματισμου πυρηνος και αναπτυξεως δι'αποθεσιν ατμου μεταλλικων χημικων ουσιων δια χρησιμοποιησεως εστιασμενων δεσμων ιοντων. - Google Patents
Μεθοδος εκλεκτικου κατα περιοχην σχηματισμου πυρηνος και αναπτυξεως δι'αποθεσιν ατμου μεταλλικων χημικων ουσιων δια χρησιμοποιησεως εστιασμενων δεσμων ιοντων.Info
- Publication number
- GR1000557B GR1000557B GR890100334A GR890100334A GR1000557B GR 1000557 B GR1000557 B GR 1000557B GR 890100334 A GR890100334 A GR 890100334A GR 890100334 A GR890100334 A GR 890100334A GR 1000557 B GR1000557 B GR 1000557B
- Authority
- GR
- Greece
- Prior art keywords
- substrate
- fib
- source gas
- ion
- ion dose
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Μία μέθοδος δια την απόθεσιν μεταλλικών γραμμών επί ενός τμηματίου-ημιαγωγού IC (ολοκληρωμένου κυκλώματος) (52) ή επικαλλύματος (MASK) περιγράφεται χρησιμοποιούσα μίαν εστιασμένην δέσμην ιόντων (FIB) (44) με μίαν πολύ χαμηλωτέραν δόσιν ιόντων από ό,τι απαιτείτο προηγουμένως, της τάξεως των (αριθμητικός τύπος) ιόντων/τετρ. εκ. Εν υπόστρωμα (32) σαρώνεται με την FIB (44) προς παραγωγήν μιας σειράς θέσεων (46) σχηματισμού πυρήνων επί της επιφανείας (42) του υποστρώματος. Αυταί αι θέσεις (46) σχηματισμού πυρήνων δύνανται να είναι εντός ενός προσθέτου στρώματος (42) ή δύνανται να παραχθούν δια βλάβης πλέγματος ή διασκορπίσεως απ' ευθείας εντός του υλικού του υποστρώματος (32). Το υπόστρωμα (32) εκτίθεται έπειτα εις εν αέριον πηγής περιέχον το προς απόθεσιν υλικόν, ενώ θερμαίνεται εις μίαν θερμοκρασίαν ελαφρώς μικροτέραν από την δια το αέριον πηγής θερμοκρασίαν αυθορμήτου θερμικής διασπάσεως. Τούτο έχει ως αποτέλεσμα μίαν καλώς καθωρισμένην γραμμήν υλικών αποτιθεμένων εκ του αερίου πηγής κατά μήκος της γραμμής (50), οριζομένης υπό των θέσεων (46) σχηματισμού πυρήνων. Ο λόγος της ενεργείας αυθορμήτου ενεργοποιήσεως προς την ενέργειαν αυτοκαταλυτικής ενεργοποιήσεως δια τα αέρια είναι κατά προτίμησιν τουλάχιστον περίπου μία τάξις μεγέθους, και η FIB (44) κατά προτίμησιν τουλάχιστον κινείται εις πολλαπλάς σαρώσεις εγκαρσίως της επιθυμουμένης γραμμής (50). Εις μίαν ειδικήν υλοποίησιν τόσον το πρόσθετον στρώμα όσον και το αέριον πηγής συνίσταται από πεντακαρβονύλιον του σιδήρου, χρησιμοποιείται μία δόσις ιόντων (αριθμητικός τύπος) ιόντων/τετρ. εκ., και το υπόστρωμα (32) θερμαίνεται κατά προσέγγισιν εις 130 βαθμούς κελσίου. Η δόσις ιόντων είναι αρκούντως χαμηλή ώστε το σύστημα να είναι συμβατόν με άλλας μεθόδους FIB, όπως η λιθογραφία, η εμφύτευσις και η επιμετάλλωσις με βομβαρδισμών κατιόντων. Αι εφαρμογαί συμπεριλαμβάνουν την κατασκευήν και επισκευήν τόσον των ICS (ολοκληρωμένων κυκλωμάτων) (52) όσον και των επικαλλυμάτων. ω
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/197,734 US4908226A (en) | 1988-05-23 | 1988-05-23 | Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams |
Publications (2)
Publication Number | Publication Date |
---|---|
GR890100334A GR890100334A (en) | 1990-03-12 |
GR1000557B true GR1000557B (el) | 1992-08-26 |
Family
ID=22730544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GR890100334A GR1000557B (el) | 1988-05-23 | 1989-05-19 | Μεθοδος εκλεκτικου κατα περιοχην σχηματισμου πυρηνος και αναπτυξεως δι'αποθεσιν ατμου μεταλλικων χημικων ουσιων δια χρησιμοποιησεως εστιασμενων δεσμων ιοντων. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4908226A (el) |
EP (1) | EP0372061B1 (el) |
JP (1) | JPH02504444A (el) |
KR (1) | KR920003791B1 (el) |
ES (1) | ES2017813A6 (el) |
GR (1) | GR1000557B (el) |
WO (1) | WO1989011553A1 (el) |
Families Citing this family (44)
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JP2650930B2 (ja) * | 1987-11-24 | 1997-09-10 | 株式会社日立製作所 | 超格子構作の素子製作方法 |
JPH01154064A (ja) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | 微細パターンの形成方法 |
US5225771A (en) * | 1988-05-16 | 1993-07-06 | Dri Technology Corp. | Making and testing an integrated circuit using high density probe points |
JP2779414B2 (ja) * | 1988-12-01 | 1998-07-23 | セイコーインスツルメンツ株式会社 | ミクロ断面の加工・観察方法 |
US5103102A (en) * | 1989-02-24 | 1992-04-07 | Micrion Corporation | Localized vacuum apparatus and method |
US4976843A (en) * | 1990-02-02 | 1990-12-11 | Micrion Corporation | Particle beam shielding |
US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
FR2664294B1 (fr) * | 1990-07-06 | 1992-10-23 | Plasmametal | Procede de metallisation d'une surface. |
DE4027062A1 (de) * | 1990-08-27 | 1992-04-23 | Integrated Circuit Testing | Verfahren und anordnung zum testen und reparieren einer integrierten schaltung |
EP0909986A1 (en) * | 1990-09-26 | 1999-04-21 | Canon Kabushiki Kaisha | Photolithographic processing method and apparatus |
EP0501278B1 (en) * | 1991-02-28 | 1998-09-30 | Texas Instruments Incorporated | Method to produce masking |
US5320881A (en) * | 1991-08-27 | 1994-06-14 | Northeastern University | Fabrication of ferrite films using laser deposition |
US5227204A (en) * | 1991-08-27 | 1993-07-13 | Northeastern University | Fabrication of ferrite films using laser deposition |
JPH0737887A (ja) * | 1993-07-22 | 1995-02-07 | Mitsubishi Electric Corp | 配線形成方法,配線修復方法,及び配線パターン変更方法 |
JPH088254A (ja) * | 1994-06-21 | 1996-01-12 | Nec Corp | 金属薄膜形成方法 |
US5651839A (en) * | 1995-10-26 | 1997-07-29 | Queen's University At Kingston | Process for engineering coherent twin and coincident site lattice grain boundaries in polycrystalline materials |
JP2884054B2 (ja) * | 1995-11-29 | 1999-04-19 | 工業技術院長 | 微細加工方法 |
JP3124508B2 (ja) * | 1996-04-19 | 2001-01-15 | 韓国科学技術研究院 | 窒化物表面の改質方法及びその方法により表面改質された窒化物 |
US7258901B1 (en) * | 2000-09-08 | 2007-08-21 | Fei Company | Directed growth of nanotubes on a catalyst |
US20060051508A1 (en) * | 2000-12-28 | 2006-03-09 | Ilan Gavish | Focused ion beam deposition |
US6638580B2 (en) * | 2000-12-29 | 2003-10-28 | Intel Corporation | Apparatus and a method for forming an alloy layer over a substrate using an ion beam |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
US6653240B2 (en) | 2001-01-12 | 2003-11-25 | International Business Machines Corporation | FIB/RIE method for in-line circuit modification of microelectronic chips containing organic dielectric |
US6905736B1 (en) * | 2001-02-28 | 2005-06-14 | University Of Central Florida | Fabrication of nano-scale temperature sensors and heaters |
US6723476B2 (en) * | 2001-08-01 | 2004-04-20 | Micron Technology, Inc. | Methods of patterning materials; and photomasks |
FR2864109B1 (fr) * | 2003-12-23 | 2006-07-21 | Commissariat Energie Atomique | Croissance organisee de nano-structures |
US20060088952A1 (en) * | 2004-01-21 | 2006-04-27 | Groves James F | Method and system for focused ion beam directed self-assembly of metal oxide island structures |
GB0410975D0 (en) * | 2004-05-17 | 2004-06-16 | Nds Ltd | Chip shielding system and method |
TWI274787B (en) * | 2005-01-04 | 2007-03-01 | Prec Instr Dev Ct Nat | Method and apparatus for fabricating nanostructure multi-element compound |
WO2006094574A1 (de) * | 2005-03-11 | 2006-09-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum herstellen einer nanostruktur auf einem substrat |
KR101359562B1 (ko) | 2005-07-08 | 2014-02-07 | 넥스젠 세미 홀딩 인코포레이티드 | 제어 입자 빔 제조를 위한 장치 및 방법 |
US8240544B2 (en) * | 2005-08-02 | 2012-08-14 | Linde Aktiengesellschaft | Introduction of nanoparticles |
EP1868255B1 (en) * | 2006-06-14 | 2011-10-19 | Novaled AG | Method for surface processing in a vacuum environment |
WO2008140585A1 (en) | 2006-11-22 | 2008-11-20 | Nexgen Semi Holding, Inc. | Apparatus and method for conformal mask manufacturing |
US10566169B1 (en) | 2008-06-30 | 2020-02-18 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
US10991545B2 (en) | 2008-06-30 | 2021-04-27 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
JP2011230430A (ja) * | 2010-04-28 | 2011-11-17 | Toshiba Corp | テンプレート補修方法、パターン形成方法及びテンプレート補修装置 |
FI20106059A (fi) * | 2010-10-14 | 2012-04-15 | Valtion Teknillinen | Toimintataajuuden vaihto LBAW-suodattimessa |
US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9090973B2 (en) * | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
US9583401B2 (en) | 2014-02-12 | 2017-02-28 | International Business Machines Corporation | Nano deposition and ablation for the repair and fabrication of integrated circuits |
JP6219227B2 (ja) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構及びステージの温度制御方法 |
US10716197B2 (en) * | 2017-09-19 | 2020-07-14 | Applied Materials Israel Ltd. | System, computer program product, and method for dissipation of an electrical charge |
US20240062990A1 (en) * | 2022-08-18 | 2024-02-22 | Applied Materials Israel Ltd. | Enhanced deposition rate by thermal isolation cover for gis manipulator |
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WO1983004269A1 (en) * | 1982-06-01 | 1983-12-08 | Massachusetts Institute Of Technology | Maskless growth of patterned films |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
JPS60182726A (ja) * | 1984-02-29 | 1985-09-18 | Seiko Instr & Electronics Ltd | パタ−ン膜形成方法 |
EP0199585B1 (en) * | 1985-04-23 | 1990-07-04 | Seiko Instruments Inc. | Apparatus for depositing electrically conductive and/or electrically insulating material on a workpiece |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
US4766516A (en) * | 1987-09-24 | 1988-08-23 | Hughes Aircraft Company | Method and apparatus for securing integrated circuits from unauthorized copying and use |
-
1988
- 1988-05-23 US US07/197,734 patent/US4908226A/en not_active Expired - Fee Related
-
1989
- 1989-04-14 KR KR1019900700114A patent/KR920003791B1/ko not_active IP Right Cessation
- 1989-04-14 WO PCT/US1989/001556 patent/WO1989011553A1/en active IP Right Grant
- 1989-04-14 JP JP1506455A patent/JPH02504444A/ja active Pending
- 1989-04-14 EP EP89906875A patent/EP0372061B1/en not_active Expired - Lifetime
- 1989-05-19 GR GR890100334A patent/GR1000557B/el unknown
- 1989-05-22 ES ES8901720A patent/ES2017813A6/es not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0372061B1 (en) | 1993-06-02 |
WO1989011553A1 (en) | 1989-11-30 |
KR900702074A (ko) | 1990-12-05 |
ES2017813A6 (es) | 1991-03-01 |
GR890100334A (en) | 1990-03-12 |
EP0372061A1 (en) | 1990-06-13 |
US4908226A (en) | 1990-03-13 |
JPH02504444A (ja) | 1990-12-13 |
KR920003791B1 (ko) | 1992-05-14 |
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