GB990982A - Improvements in and relating to transistors - Google Patents

Improvements in and relating to transistors

Info

Publication number
GB990982A
GB990982A GB373861A GB373861A GB990982A GB 990982 A GB990982 A GB 990982A GB 373861 A GB373861 A GB 373861A GB 373861 A GB373861 A GB 373861A GB 990982 A GB990982 A GB 990982A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
layer
recrystallized
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB373861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Publication of GB990982A publication Critical patent/GB990982A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Die Bonding (AREA)

Abstract

990,982. Transistors. COMPAGNIE FRANCAISE THOMSON-HOUSTON. Aug. 25, 1961 [Sept. 23, 1960], No. 30738/61. Heading H1K. A method of forming a body for a transistor starts with a rod of semi-conductor material containing two actuating materials of opposite conductivity type, of which that having the greater concentration has the lower diffusion coefficient, and subjects it to the following steps:-an end portion of the rod is fused and allowed to recrystallize, thus forming the body shown in Fig. 1 in which the recrystallized region 2 is of the same conductivity type as the unfused region 1 but is of lower overall doping, appreciable amounts of activators having recrystallized in the tip portion 3; the recrystallized portion is then heated in an atmosphere containing an activator of the same conductivity type as that originally present in the rod to the lesser extent, and this treatment simultaneously forms a surface layer 5 (Fig. 3) of opposite conductivity type on the more weakly doped portion 2 of the body, and forms a base layer 4 of this conductivity type in the body by diffusion of the faster diffusing impurity from the more highly doped region. A wax or varnish masking blob 6 is then applied to the body as shown so that after etching a body is produced (Fig. 5) which has emitter region 8, base region 4, and a collector region, the collector region having overlying part of its surface a layer 10 to which the base electrode 15 is attached. Emitter and collector electrodes 11, 12 are attached to their respective regions on the opposite side of the body to the base electrode. In the particular embodiment the body is made of germanium doped with indium and a lesser quantity of antimony, and is heated during its processing in an atmosphere containing antimony. The resulting PNP body has a base electrode of gold/antimony wire fused to layer 10 and has nickel bands 11, 12 acting as emitter and collector electrodes soldered to the body with tin/lead alloy. Specific doping concentrations at the various processing stages are mentioned in the Specification. Specification 990,981 is referred to.
GB373861A 1960-09-23 1961-08-25 Improvements in and relating to transistors Expired GB990982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR839358A FR1275047A (en) 1960-09-23 1960-09-23 Method of manufacturing a high performance very high frequency transistor

Publications (1)

Publication Number Publication Date
GB990982A true GB990982A (en) 1965-05-05

Family

ID=8739536

Family Applications (1)

Application Number Title Priority Date Filing Date
GB373861A Expired GB990982A (en) 1960-09-23 1961-08-25 Improvements in and relating to transistors

Country Status (2)

Country Link
FR (1) FR1275047A (en)
GB (1) GB990982A (en)

Also Published As

Publication number Publication date
FR1275047A (en) 1961-11-03

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