FR1275047A - Method of manufacturing a high performance very high frequency transistor - Google Patents
Method of manufacturing a high performance very high frequency transistorInfo
- Publication number
- FR1275047A FR1275047A FR839358A FR839358A FR1275047A FR 1275047 A FR1275047 A FR 1275047A FR 839358 A FR839358 A FR 839358A FR 839358 A FR839358 A FR 839358A FR 1275047 A FR1275047 A FR 1275047A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- frequency transistor
- high frequency
- high performance
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR839358A FR1275047A (en) | 1960-09-23 | 1960-09-23 | Method of manufacturing a high performance very high frequency transistor |
GB373861A GB990982A (en) | 1960-09-23 | 1961-08-25 | Improvements in and relating to transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR839358A FR1275047A (en) | 1960-09-23 | 1960-09-23 | Method of manufacturing a high performance very high frequency transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1275047A true FR1275047A (en) | 1961-11-03 |
Family
ID=8739536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR839358A Expired FR1275047A (en) | 1960-09-23 | 1960-09-23 | Method of manufacturing a high performance very high frequency transistor |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1275047A (en) |
GB (1) | GB990982A (en) |
-
1960
- 1960-09-23 FR FR839358A patent/FR1275047A/en not_active Expired
-
1961
- 1961-08-25 GB GB373861A patent/GB990982A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB990982A (en) | 1965-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1247060A (en) | Process for manufacturing an epoxypolybutadiene and epoxypolybutadienes obtained by this process | |
CH400370A (en) | Method of manufacturing a semiconductor device | |
BE600139A (en) | A method of manufacturing a semiconductor arrangement. | |
FR1434929A (en) | Method of manufacturing a curved screen and screen thus obtained | |
CH392700A (en) | Method of manufacturing a semiconductor device | |
FR1293869A (en) | Method of manufacturing a semiconductor device | |
CH391469A (en) | Method of manufacturing a stator of a turbo-machine | |
FR1275047A (en) | Method of manufacturing a high performance very high frequency transistor | |
FR1284673A (en) | New manufacturing process for a high performance very high frequency transistor | |
CH369214A (en) | A method of manufacturing a semiconductor device and a semiconductor device obtained by this method | |
FR1279153A (en) | Method and machine for the production of spiral wound strip pipes | |
FR1303969A (en) | Method of manufacturing a semiconductor component | |
BE606723A (en) | Process for the manufacture of eupolyoxymethylenes. | |
FR1506110A (en) | High frequency integrated circuit and method for its manufacture | |
FR1256011A (en) | Process and installation for the manufacture of plaster | |
FR1244085A (en) | Improved process for the manufacture of olefinic elastomers | |
CH388234A (en) | Method of manufacturing a finned article and finned article obtained by this method | |
FR1524951A (en) | Method of manufacturing foundry tools and tools thus obtained | |
FR1364954A (en) | Method of manufacturing a heat-insulating case | |
CH336506A (en) | Method of manufacturing a semiconductor element and element obtained by this process | |
BE609320A (en) | Method of manufacturing a semiconductor component | |
FR1326261A (en) | Method of manufacturing a semiconductor component | |
FR1291471A (en) | Method of manufacturing a semiconductor device | |
FR1262078A (en) | Method of manufacturing transistors, of the alloy type, for high frequencies | |
CH362961A (en) | Manufacturing process of a concrete structure |